Patents by Inventor Baikui LI

Baikui LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistors having on-chip integrated photon source or photonic-ohmic drain to facilitate de-trapping electrons trapped in deep traps of transistors
    Patent number: 10270436
    Abstract: Techniques are provided that pumping of deep traps in GaN electronic devices using photons from an on-chip photon source. In various embodiments, a method for optical pumping of deep traps in GaN HEMTs is provided using an on-chip integrated photon source that is configured to generate photons during operation of the HEMT. In an aspect, the on-chip photon source is a SoH-LED. In various additional embodiments, an integration scheme is provided that integrates the photon source into the drain electrode of a HEMT, thereby converting the conventional HEMT with an ohmic drain to a transistor with hybrid photonic-ohmic drain (POD), a POD transistor or PODFET for short.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: April 23, 2019
    Assignee: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jing Chen, Baikui Li, Xi Tang
  • TRANSISTORS HAVING ON-CHIP INTEGRARED PHOTON SOURCE OR PHOTONIC-OHMIC DRAIN TO FACILIATE DE-TRAPPING ELECTRONS TRAPPED IN DEEP TRAPS OF TRANSISTORS
    Publication number: 20170338810
    Abstract: Techniques are provided that pumping of deep traps in GaN electronic devices using photons from an on-chip photon source. In various embodiments, a method for optical pumping of deep traps in GaN HEMTs is provided using an on-chip integrated photon source that is configured to generate photons during operation of the HEMT. In an aspect, the on-chip photon source is a SoH-LED. In various additional embodiments, an integration scheme is provided that integrates the photon source into the drain electrode of a HEMT, thereby converting the conventional HEMT with an ohmic drain to a transistor with hybrid photonic-ohmic drain (POD), a POD transistor or PODFET for short.
    Type: Application
    Filed: November 13, 2015
    Publication date: November 23, 2017
    Inventors: Jing CHEN, Baikui LI, Xi TANG