Patents by Inventor Baiqing Zong

Baiqing Zong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180048387
    Abstract: Provided are a method and a device for processing signal, and a receiver. The method includes: receiving a signal to be recovered; determining a cutting position of the signal to be recovered; and recovering the signal to be recovered into a transmitted signal according to the determined clipping position.
    Type: Application
    Filed: February 15, 2016
    Publication date: February 15, 2018
    Applicant: ZTE CORPORATION
    Inventors: Baiqing ZONG, Yong LI
  • Patent number: 9553618
    Abstract: Provided is a signal cancellation method for a wireless communication system, including: splitting a transmitted signal to obtain a main channel signal transmitted on a main channel and an auxiliary channel signal transmitted on an auxiliary channel; performing digital domain channel characteristic matching processing on the main channel signal and the auxiliary channel signal respectively to obtain a main channel characteristic matched signal and an auxiliary channel characteristic matched signal; and combining the main channel characteristic matched signal and the auxiliary channel characteristic matched signal which are coupled to a receiving channel in order for signal cancellation. A signal cancellation device for a wireless communication system is also provided. Through the technical solution of the disclosure, the signal cancellation problem of a bandwidth can be solved better.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: January 24, 2017
    Assignee: ZTE CORPORATION
    Inventors: Qi Tian, Qing Yang, Yijun Cui, Jianli Wang, Baiqing Zong
  • Patent number: 9520338
    Abstract: A transistor is provided, which includes: a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device contains a semiconductor compound layer, a metal layer, a heat conducting layer, a thermocouple heat conducting device and a heat sink layer, the semiconductor compound layer is grown on the semiconductor growth substrate, the metal layer is grown on the semiconductor compound layer, the heat conducting layer is grown on the metal layer, the thermocouple heating conducting device is grown on the heat conducting layer, and the heat sink layer is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer. The thermocouple heating conducting device may further contain power supply arms which are grown on the heat conducting layer and are electrically connected with the thermocouple heat conducting device.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: December 13, 2016
    Assignee: ZTE CORPORATION
    Inventors: Dapeng Wang, Zhiyong Zhao, Wu Zeng, Xuelu Mu, Baiqing Zong, Yijun Cui
  • Publication number: 20160126985
    Abstract: Provided is a signal cancellation method for a wireless communication system, including: splitting a transmitted signal to obtain a main channel signal transmitted on a main channel and an auxiliary channel signal transmitted on an auxiliary channel; performing digital domain channel characteristic matching processing on the main channel signal and the auxiliary channel signal respectively to obtain a main channel characteristic matched signal and an auxiliary channel characteristic matched signal; and combining the main channel characteristic matched signal and the auxiliary channel characteristic matched signal which are coupled to a receiving channel in order for signal cancellation. A signal cancellation device for a wireless communication system is also provided. Through the technical solution of the disclosure, the signal cancellation problem of a bandwidth can be solved better.
    Type: Application
    Filed: October 10, 2013
    Publication date: May 5, 2016
    Inventors: Qi Tian, Qing Yang, Yijun Cui, Jianli Wang, Baiqing Zong
  • Publication number: 20150348867
    Abstract: A transistor is provided, which includes: a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device contains a semiconductor compound layer, a metal layer, a heat conducting layer, a thermocouple heat conducting device and a heat sink layer, the semiconductor compound layer is grown on the semiconductor growth substrate, the metal layer is grown on the semiconductor compound layer, the heat conducting layer is grown on the metal layer, the thermocouple heating conducting device is grown on the heat conducting layer, and the heat sink layer is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer. The thermocouple heating conducting device may further contain power supply arms which are grown on the heat conducting layer and are electrically connected with the thermocouple heat conducting device.
    Type: Application
    Filed: August 23, 2013
    Publication date: December 3, 2015
    Inventors: Dapeng Wang, Zhiyong Zhao, Wu Zeng, Xuelu Mu, Baiqing Zong, Yijun Cui