Patents by Inventor Baixiang Han

Baixiang Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9892684
    Abstract: A pixel compensation circuit contains first controllable switch's control terminal is connected to first scan line, and first terminal to data line; driving switch's control terminal is connected to second terminals of first and third controllable switches, and second terminal to OLED's anode and fifth controllable switch's first terminal, cathode to ground; second controllable switch's control terminal is connected to lighting control terminal, and first terminal to a voltage terminal; second scan line is connected to control terminals of third to fifth controllable switches, first terminals of the third and second controllable switches are connected; driving switch's first terminal is connected to second controllable switch's second terminal and fourth controllable switch's first terminal, reference voltage terminal is connected to second terminals of fourth and fifth switches; driving switch's control terminal is connected to its first terminal through storage capacitor.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: February 13, 2018
    Assignee: Shenzhen China Star Optoelectroniccs Technology Co., Ltd.
    Inventor: Baixiang Han
  • Publication number: 20180040646
    Abstract: A TFT substrate, a display device and a manufacturing method are disclosed. The TFT substrate includes a substrate and a first TFT structure and a second TFT structure formed on the substrate. The first TFT structure includes a first gate pattern and a first semiconductor pattern. The first semiconductor pattern is divided into a first channel region, and a first doping region and a second doping region located at two sides of the first channel region. The first channel region is disposed corresponding to the first gate pattern to form a first conductive channel under the function of first gate pattern. The first doping region is extended inside the second TFT structure as a second gate pattern of the second TFT structure. The present invention uses doping drain of a switching TFT as gate of a driving TFT to save layout space, and beneficial for realization of higher PPI.
    Type: Application
    Filed: February 26, 2016
    Publication date: February 8, 2018
    Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
    Inventor: Baixiang HAN
  • Patent number: 9875688
    Abstract: The present invention provides an AMOLED pixel driving circuit and a pixel driving method. The AMOLED pixel driving circuit utilizes a 6T2C structure, comprising a first, a second, a third, a fourth, a fifth and a sixth thin film transistors (T1, T2, T3, T4, T5, T6), a first, a second capacitors (C1, C2) and an organic light emitting diode (OLED), and the first thin film transistor (T1) is a drive thin film transistor, and the fifth thin film transistor (T5) is a switch thin film transistor; and a first control signal (G1), a second control signal (G2) and a third control signal (G3) are involved, and the three are combined with one another and correspond to a data signal writing stage (1), a whole compensation stage (2), a charging stage (3) and a light emitting stage (4) one after another. The threshold voltage changes of the drive thin film transistor and the organic light emitting diode can be effectively compensated to make the display brightness of the AMOLED more even and to raise the display quality.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: January 23, 2018
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Baixiang Han
  • Patent number: 9876036
    Abstract: The present invention provides a TFT arrangement structure, comprising a first thin film transistor (T1) and a second thin film transistor (T2) controlled by the same control signal line; the first active layer (SC1) of the first thin film transistor (T1) and the second active layer (SC2) of the second thin film transistor (T2) are at different layers, and positioned to stack up in space, and the first source (S1) and the first drain (D1) of the first thin film transistor (T1) are formed on the first active layer (SC1), and the second source (S2) and the second drain (D2) of the second thin film transistor (T2) are formed on the second active layer (SC2); the gate layer (Gate) is electrically coupled to the control signal line to control on and off of the first, the second thin film transistors (T1, T2).
    Type: Grant
    Filed: May 21, 2015
    Date of Patent: January 23, 2018
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Baixiang Han, Longqiang Shi
  • Publication number: 20170330505
    Abstract: A pixel compensation circuit contains first controllable switch's control terminal is connected to first scan line, and first terminal to data line; driving switch's control terminal is connected to second terminals of first and third controllable switches, and second terminal to OLED's anode and fifth controllable switch's first terminal, cathode to ground; second controllable switch's control terminal is connected to lighting control terminal, and first terminal to a voltage terminal; second scan line is connected to control terminals of third to fifth controllable switches, first terminals of the third and second controllable switches are connected; driving switch's first terminal is connected to second controllable switch's second terminal and fourth controllable switch's first terminal, reference voltage terminal is connected to second terminals of fourth and fifth switches; driving switch's control terminal is connected to its first terminal through storage capacitor.
    Type: Application
    Filed: February 25, 2016
    Publication date: November 16, 2017
    Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
    Inventor: Baixiang HAN
  • Publication number: 20170294164
    Abstract: An AMOLED pixel driving circuit has a 5T1C structure, which includes a first, a second, a third, a fourth, and a fifth thin film transistors, a capacitor, and an organic light emitting diode (OLED). The first thin film transistor is a drive thin film transistor. A first global signal, a second global signal, and a scan signal are fed, with various combinations thereof, for various operations of the circuit in an initialization stage, a data writing stage, a threshold voltage compensation stage, and a drive stage. The data writing stage and the threshold voltage compensation stage are carried out simultaneously for effectively compensating threshold voltage variation of the drive thin film transistor and the organic light emitting diode to make the display brightness of the AMOLED uniform and to promote the display quality.
    Type: Application
    Filed: June 27, 2017
    Publication date: October 12, 2017
    Inventors: Baixiang Han, Yuanchun Wu
  • Patent number: 9768203
    Abstract: The present invention provides a TFT arrangement structure, comprising a first thin film transistor (T1) and a second thin film transistor (T2) controlled by the same control signal line; the first active layer (SC1) of the first thin film transistor (T1) and the second active layer (SC2) of the second thin film transistor (T2) are at different layers, and positioned to stack up in space, and the first source (S1) and the first drain (D1) of the first thin film transistor (T1) contact the first active layer (SC1), and the second source (S2) and the second drain (D2) of the second thin film transistor (T2) contact the second active layer (SC2); the bottom gate layer (Bottom Gate) of the first thin film transistor (T1) is positioned under the first active layer (SC1), and the top gate layer (Top Gate) of the second thin film transistor (T2) is above the second active layer (SC2).
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: September 19, 2017
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Baixiang Han, Longqiang Shi
  • Patent number: 9761173
    Abstract: The present invention provides an AMOLED pixel driving circuit and a pixel driving method. The AMOLED pixel driving circuit utilizes a 6T2C structure, comprising a first, a second, a third, a fourth, a fifth and a sixth thin film transistors (T1, T2, T3, T4, T5, T6), a first, a second capacitors (C1, C2) and an organic light emitting diode (OLED), and the first thin film transistor (T1) is a drive thin film transistor, and the fifth thin film transistor (T5) is a switch thin film transistor, and the first capacitor (C1) is a coupling capacitor, and the second capacitor (C2) is a storage capacitor; and a first control signal (G1), a second control signal (G2) and a third control signal (G3) are involved, and the three are combined with one another and correspond to a data signal writing stage (1), a whole compensation stage (2), a discharging stage (3) and a light emitting stage (4) one after another.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: September 12, 2017
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Baixiang Han
  • Patent number: 9728131
    Abstract: The present invention provides an AMOLED pixel driving circuit and a pixel driving method. The AMOLED pixel driving circuit utilizes a 5T1C structure, comprising a first, a second, a third, a fourth and a fifth thin film transistors (T1, T2, T3, T4, T5), a capacitor (C) and an organic light emitting diode (OLED). The first thin film transistor (T1) is a drive thin film transistor; the first global signal (G1), the second global signal (G2) and the scan signal (Scan) are introduced to be combined with one another, and correspond to an initialization stage (1), a data writing stage (2), a threshold voltage compensation stage (3) and a drive stage (4) one after another, wherein the data writing stage (2) and the threshold voltage compensation stage (3) are simultaneously proceeded for effectively compensating the threshold voltage variations of the drive thin film transistor and the organic light emitting diode to make the display brightness of the AMOLED more even and to promote the display quality.
    Type: Grant
    Filed: April 3, 2015
    Date of Patent: August 8, 2017
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Baixiang Han, Yuanchun Wu
  • Patent number: 9721507
    Abstract: The present invention provides an AMOLED pixel driving circuit and a pixel driving method. The AMOLED pixel driving circuit utilizes a 5T2C structure, comprising a first, a second, a third, a fourth and a fifth thin film transistors (T1, T2, T3, T4, T5), a first, a second capacitors (C1, C2) and an organic light emitting diode (OLED), and the first thin film transistor (T1) is a drive thin film transistor; and a first, a second and a third global signal (G1, G2, G3) are involved, and the three and the scan signal (Scan) are combined with one another and correspond to an initialization stage (1), a data signal writing stage (2), a threshold voltage compensation stage (3) and a drive stage (4) one after another. The data writing signal stage (2) and the threshold voltage compensation stage (3) are separately implemented.
    Type: Grant
    Filed: April 22, 2015
    Date of Patent: August 1, 2017
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Baixiang Han
  • Patent number: 9673227
    Abstract: The present invention provides a method for manufacturing a TFT substrate and a structure thereof. The method for manufacturing the TFT substrate uses a connection semiconductor (42) that is formed in a semiconductor layer and is subjected to N-type heavy doping to connect a first semiconductor (41) and a second semiconductor (43) so as to connect the first TFT and the second TFT in series. The N-type heavily doped connection semiconductor (42) substitutes a connection electrode that is formed in a second metal layer in prior art techniques for preventing the design rules of the connection electrode and the second metal layer from being narrowed due to the connection electrode being collectively present on the second metal layer with signal lines of a data line and a voltage supply line and for facilitating increase of an aperture ratio and definition of a display panel.
    Type: Grant
    Filed: May 25, 2015
    Date of Patent: June 6, 2017
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Longqiang Shi, Baixiang Han
  • Publication number: 20170148817
    Abstract: The present invention provides a method for manufacturing a TFT substrate and a structure thereof. The method for manufacturing the TFT substrate arranges a connection electrode (83) that connects two dual gate TFTs in a third metal layer to prevent the design rules of a connection electrode and a second metal layer of the prior art techniques from being narrowed due to the connection electrode being collectively present on the second metal layer with signal lines of a data line and a voltage supply line so as to facilitate increase of an aperture ratio and definition of a display panel. The present invention provides a TFT substrate structure, which has a simple structure and possesses a high aperture ratio and high definition.
    Type: Application
    Filed: May 27, 2015
    Publication date: May 25, 2017
    Inventors: Longqiang SHI, Baixiang HAN
  • Publication number: 20170141127
    Abstract: The present invention provides a method for manufacturing a TFT substrate and a structure thereof. The method for manufacturing the TFT substrate uses a connection semiconductor (42) that is formed in a semiconductor layer and is subjected to N-type heavy doping to connect a first semiconductor (41) and a second semiconductor (43) so as to connect the first TFT and the second TFT in series. The N-type heavily doped connection semiconductor (42) substitutes a connection electrode that is formed in a second metal layer in prior art techniques for preventing the design rules of the connection electrode and the second metal layer from being narrowed due to the connection electrode being collectively present on the second metal layer with signal lines of a data line and a voltage supply line and for facilitating increase of an aperture ratio and definition of a display panel.
    Type: Application
    Filed: May 25, 2015
    Publication date: May 18, 2017
    Inventors: Longqiang SHI, Baixiang HAN
  • Publication number: 20170039940
    Abstract: The present invention provides an AMOLED pixel driving circuit and a pixel driving method. The AMOLED pixel driving circuit utilizes a 5T1C structure, comprising a first, a second, a third, a fourth and a fifth thin film transistors (T1, T2, T3, T4, T5), a capacitor (C) and an organic light emitting diode (OLED). The first thin film transistor (T1) is a drive thin film transistor; the first global signal (G1), the second global signal (G2) and the scan signal (Scan) are introduced to be combined with one another, and correspond to an initialization stage (1), a data writing stage (2), a threshold voltage compensation stage (3) and a drive stage (4) one after another, wherein the data writing stage (2) and the threshold voltage compensation stage (3) are simultaneously proceeded for effectively compensating the threshold voltage variations of the drive thin film transistor and the organic light emitting diode to make the display brightness of the AMOLED more even and to promote the display quality.
    Type: Application
    Filed: April 3, 2015
    Publication date: February 9, 2017
    Inventors: Baixiang Han, Yuanchun Wu
  • Publication number: 20170039942
    Abstract: The present invention provides an AMOLED pixel driving circuit and a pixel driving method. The AMOLED pixel driving circuit utilizes a 5T2C structure, comprising a first, a second, a third, a fourth and a fifth thin film transistors (T1, T2, T3, T4, T5), a first, a second capacitors (C1, C2) and an organic light emitting diode (OLED), and the first thin film transistor (T1) is a drive thin film transistor; and a first, a second and a third global signal (G1, G2, G3) are involved, and the three and the scan signal (Scan) are combined with one another and correspond to an initialization stage (1), a data signal writing stage (2), a threshold voltage compensation stage (3) and a drive stage (4) one after another. The data writing signal stage (2) and the threshold voltage compensation stage (3) are separately implemented.
    Type: Application
    Filed: April 22, 2015
    Publication date: February 9, 2017
    Inventor: Baixiang Han
  • Patent number: 9495907
    Abstract: The present invention provides a pixel driving circuit and a pixel driving method of an organic light emitting diode, the pixel driving circuit comprises: a first transistor (T1), a second transistor (T2), a third transistor (T3), a fourth transistor (T4), a fifth transistor (T5), a sixth transistor (T6), a storage capacitor (C1) and an organic light-emitting diode (OLED); which also comprises a scanning control terminal (Scan), a data signal terminal (Data), a constant current source (Iref), a control light emitting signal terminal (Em), a power supply voltage (VDD) and a power supply negative electrode (VSS); the first transistor (T1) is a driving transistor.
    Type: Grant
    Filed: July 2, 2014
    Date of Patent: November 15, 2016
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventor: Baixiang Han
  • Publication number: 20160315104
    Abstract: The present invention provides a TFT arrangement structure, comprising a first thin film transistor (T1) and a second thin film transistor (T2) controlled by the same control signal line; the first active layer (SC1) of the first thin film transistor (T1) and the second active layer (SC2) of the second thin film transistor (T2) are at different layers, and positioned to stack up in space, and the first source (S1) and the first drain (D1) of the first thin film transistor (T1) contact the first active layer (SC1), and the second source (S2) and the second drain (D2) of the second thin film transistor (T2) contact the second active layer (SC2); the bottom gate layer (Bottom Gate) of the first thin film transistor (T1) is positioned under the first active layer (SC1), and the top gate layer (Top Gate) of the second thin film transistor (T2) is above the second active layer (SC2).
    Type: Application
    Filed: May 22, 2015
    Publication date: October 27, 2016
    Inventors: Baixiang Han, Longqiang Shi
  • Publication number: 20160307501
    Abstract: The present invention provides an AMOLED pixel driving circuit and a pixel driving method. The AMOLED pixel driving circuit utilizes a 6T2C structure, comprising a first, a second, a third, a fourth, a fifth and a sixth thin film transistors (T1, T2, T3, T4, T5, T6), a first, a second capacitors (C1, C2) and an organic light emitting diode (OLED), and the first thin film transistor (T1) is a drive thin film transistor, and the fifth thin film transistor (T5) is a switch thin film transistor; and a first control signal (G1), a second control signal (G2) and a third control signal (G3) are involved, and the three are combined with one another and correspond to a data signal writing stage (1), a whole compensation stage (2), a charging stage (3) and a light emitting stage (4) one after another. The threshold voltage changes of the drive thin film transistor and the organic light emitting diode can be effectively compensated to make the display brightness of the AMOLED more even and to raise the display quality.
    Type: Application
    Filed: April 1, 2015
    Publication date: October 20, 2016
    Inventor: Baixiang HAN
  • Publication number: 20160307500
    Abstract: The present invention provides an AMOLED pixel driving circuit and a pixel driving method. The AMOLED pixel driving circuit utilizes a 6T2C structure, comprising a first, a second, a third, a fourth, a fifth and a sixth thin film transistors (T1, T2, T3, T4, T5, T6), a first, a second capacitors (C1, C2) and an organic light emitting diode (OLED), and the first thin film transistor (T1) is a drive thin film transistor, and the fifth thin film transistor (T5) is a switch thin film transistor, and the first capacitor (C1) is a coupling capacitor, and the second capacitor (C2) is a storage capacitor; and a first control signal (G1), a second control signal (G2) and a third control signal (G3) are involved, and the three are combined with one another and correspond to a data signal writing stage (1), a whole compensation stage (2), a discharging stage (3) and a light emitting stage (4) one after another.
    Type: Application
    Filed: April 1, 2015
    Publication date: October 20, 2016
    Inventor: Baixiang Han
  • Publication number: 20160307935
    Abstract: The present invention provides a TFT arrangement structure, comprising a first thin film transistor (T1) and a second thin film transistor (T2) controlled by the same control signal line; the first active layer (SC1) of the first thin film transistor (T1) and the second active layer (SC2) of the second thin film transistor (T2) are at different layers, and positioned to stack up in space, and the first source (S1) and the first drain (D1) of the first thin film transistor (T1) are formed on the first active layer (SC1), and the second source (S2) and the second drain (D2) of the second thin film transistor (T2) are formed on the second active layer (SC2); the gate layer (Gate) is electrically coupled to the control signal line to control on and off of the first, the second thin film transistors (T1, T2).
    Type: Application
    Filed: May 21, 2015
    Publication date: October 20, 2016
    Inventors: Baixiang Han, Longqiang Shi