Patents by Inventor Baiyu SU

Baiyu SU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220328706
    Abstract: An InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure and a preparation method and an application thereof are provided. The detector includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove structure, a mesa and a groove of the multiple quantum well layer are provided with a Si3N4 passivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.
    Type: Application
    Filed: April 29, 2022
    Publication date: October 13, 2022
    Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY
    Inventors: Wenliang WANG, Guoqiang LI, Baiyu SU, Zhengliang LIN, Deqi KONG, Wenjin MAI