Patents by Inventor Baker P. Scott

Baker P. Scott has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7884681
    Abstract: Embodiments of the present invention include amplitude-modulated or polar-modulated radio frequency (RF) power amplifier circuitry, in which an envelope power supply input to an RF power amplifier is powered by a pre-distorted amplitude modulation (AM) power supply. The pre-distorted AM power supply receives an AM signal, which is then pre-distorted and amplified to provide an AM power supply signal to the RF power amplifier. The pre-distortion of the AM signal is used to improve the linearity, the efficiency, or both, of the RF power amplifier. The pre-distortion provides a feed-forward system, which may allow use of a reduced bandwidth pre-distorted AM signal to an AM power supply and a reduced bandwidth AM power supply, which may increase efficiency.
    Type: Grant
    Filed: April 30, 2008
    Date of Patent: February 8, 2011
    Assignee: RF Micro Devices, Inc.
    Inventors: Nadim Khlat, Ruediger Bauder, David Reed, Baker P. Scott
  • Patent number: 7579920
    Abstract: A self-biasing negative transconductance LC oscillator that uses self-biasing circuitry to regulate a current source that feeds negative transconductance circuitry and direct current (DC) bias circuitry to apply a DC bias between control inputs and outputs of the negative transconductance circuitry is disclosed. A current source setpoint is based on the voltage swing of the oscillator, which can then be controlled by the DC power supply that powers the oscillator. In one embodiment of the present invention, the negative transconductance circuitry includes a pair of p-type metal oxide semiconductor (PMOS) cross-coupled field effect transistors (FETs), which have a limit applied to their gate to source voltages. Limiting the gate to source voltages of the FETs limits the percentage of the oscillation cycle that the FETs spend in the triode region and thus reduces the noise contribution of the FETs and allows for less power consumption for a given noise requirement.
    Type: Grant
    Filed: July 13, 2007
    Date of Patent: August 25, 2009
    Assignee: RF Micro Devices, Inc.
    Inventors: Eric K. Bolton, Baker P. Scott