Abstract: An apparatus for masking power consumption associated with one or more operations of a logic circuitry of a processor. The apparatus comprises power-complementing circuitry configured to provide a second power consumption to directly power-complementing the power consumption associated with the one or more operations of the logic circuitry. The second power consumption complements the power consumption associated with the one or more operations of the logic circuitry. The apparatus further comprises header circuitry configured to enable a common node to vary in voltage corresponding to the one or more operations of the logic circuitry. The power-complementing circuitry and the header circuitry are each coupled to the logic circuitry at the common node.

Abstract: A non-volatile memory device includes a floating-node memory cell disposed in an integrated circuit (IC). The memory cell includes a floating-node, a control node, an erase node, a source node, and a drain node. The memory device also includes a high-voltage input node for coupling to an external programmable high-voltage source external to the IC. The memory device also includes a high-voltage switch circuit coupled to the high-voltage input node for providing a voltage signal for performing hot-electron programming of charges to the floating node and tunneling erase of charges from the floating node.

Abstract: A floating-node memory device includes a metal-oxide-semiconductor (MOS) transistor including a first polysilicon gate, a source region, and a drain region in a first well region, a tunneling device including a second polysilicon gate in a second well region, and a metal-insulator-metal (MIM) capacitor including a conductive top plate and a bottom plate formed in a metal interconnect layer. The floating-node device includes a floating-node comprising the first polysilicon gate, the second polysilicon gate, and the conductive top plate of the MIM capacitor coupled together, a control node at the bottom plate of the MIM capacitor, an erase node in the second well region, a source node at the source region of the MOS transistor, and a drain node at the drain region of the MOS transistor.

Abstract: An amplifier circuit includes an amplifier and an output transistor. The amplifier is coupled to an output node of the output transistor for providing an output voltage to a load device. The amplifier circuit also includes a slew-rate control circuit coupled to a gate node of the output transistor and configured to control voltage rise of the gate node of the output transistor during power-up to reduce output voltage overshoot.

Abstract: An amplifier circuit includes an amplifier and an output transistor. The amplifier is coupled to an output node of the output transistor for providing an output voltage to a load device. The amplifier circuit also includes a slew-rate control circuit coupled to a gate node of the output transistor and configured to control voltage rise of the gate node of the output transistor during power-up to reduce output voltage overshoot.

Abstract: Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has a step-down converter coupled to an oscillator between a first voltage supply and a second voltage supply. The second stage is coupled to the first stage, and the second stage has a current bias generator coupled to a diode-connected transistor between the first voltage supply and the second voltage supply. The second stage provides an intermediate voltage to the first stage.

Abstract: According to one embodiment of the present disclosure, a device comprises a latching circuitry, where the latching circuitry comprises at least one correlated electron random access memory (CeRAM) element. The latching circuitry further comprises a control circuit coupled to the at least one CeRAM element. The control circuit is configured to receive at least one control signal. Based on the at least one control signal, perform at least one of storing data into the latching circuitry and outputting data from the latching circuitry.

Abstract: Subject matter disclosed herein may relate to generation of programmable voltage references.

Abstract: An integrated circuit includes a current detection circuit configured for coupling to an output terminal of a voltage regulator, the output terminal providing a total current that is divided into a load current to a load device and a feedback current for providing a feedback signal to the voltage regulator. The current detection circuit includes a current sampling circuit and a current comparator circuit. The current sampling circuit provides a first current that is proportional to the total current, a second current that is proportional to the feedback current, and a third current that is proportional to the load current. The current comparator circuit is configured to compare the third current with a threshold current, and output a detection signal that indicates whether the third current matches the threshold current, thereby indicating a target load device is detected.

Abstract: An apparatus for masking power consumption associated with one or more operations of a logic circuitry of a processor. The apparatus comprises power-complementing circuitry configured to provide a second power consumption to directly power-complementing the power consumption associated with the one or more operations of the logic circuitry. The second power consumption complements the power consumption associated with the one or more operations of the logic circuitry. The apparatus further comprises header circuitry configured to enable a common node to vary in voltage corresponding to the one or more operations of the logic circuitry. The power-complementing circuitry and the header circuitry are each coupled to the logic circuitry at the common node.

Abstract: An output driver for an audio system includes a pre-charge circuit. The pre-charge circuit includes a charging amplifier and a feedback bias circuit. A charging amplifier includes an output node for coupling to a capacitive load, a first input node for receiving a reference voltage, a second input node for coupling to the output node of the charging amplifier, and a bias node for receiving a bias current. An output current of the charging amplifier varies with the bias current. The feedback bias circuit is coupled to the output node to sense an output voltage of the charging amplifier, and configured to provide the bias current that varies with the output voltage of the charging amplifier.

Abstract: An output driver for an audio system includes a pre-charge circuit. The pre-charge circuit includes a charging amplifier and a feedback bias circuit. A charging amplifier includes an output node for coupling to a capacitive load, a first input node for receiving a reference voltage, a second input node for coupling to the output node of the charging amplifier, and a bias node for receiving a bias current. An output current of the charging amplifier varies with the bias current. The feedback bias circuit is coupled to the output node to sense an output voltage of the charging amplifier, and configured to provide the bias current that varies with the output voltage of the charging amplifier.

Abstract: An apparatus for masking power consumption associated with one or more operations of a logic circuitry of a processor. The apparatus comprises power-complementing circuitry configured to provide a second power consumption to directly power-complementing the power consumption associated with the one or more operations of the logic circuitry. The second power consumption complements the power consumption associated with the one or more operations of the logic circuitry. The apparatus further comprises header circuitry configured to enable a common node to vary in voltage corresponding to the one or more operations of the logic circuitry. The power-complementing circuitry and the header circuitry are each coupled to the logic circuitry at the common node.

Abstract: An integrated circuit includes a current detection circuit configured for coupling to an output terminal of a voltage regulator, the output terminal providing a total current that is divided into a load current to a load device and a feedback current for providing a feedback signal to the voltage regulator. The current detection circuit includes a current sampling circuit and a current comparator circuit. The current sampling circuit provides a first current that is proportional to the total current, a second current that is proportional to the feedback current, and a third current that is proportional to the load current. The current comparator circuit is configured to compare the third current with a threshold current, and output a detection signal that indicates whether the third current matches the threshold current, thereby indicating a target load device is detected.

Abstract: Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has a step-down converter coupled to an oscillator between a first voltage supply and a second voltage supply. The second stage is coupled to the first stage, and the second stage has a current bias generator coupled to a diode-connected transistor between the first voltage supply and the second voltage supply. The second stage provides an intermediate voltage to the first stage.

Abstract: Subject matter disclosed herein may relate to programmable current for correlated electron switches.

Abstract: Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has a step-down converter coupled to an oscillator between a first voltage supply and a second voltage supply. The second stage is coupled to the first stage, and the second stage has a current bias generator coupled to a diode-connected transistor between the first voltage supply and the second voltage supply. The second stage provides an intermediate voltage to the first stage.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

Abstract: Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has a step-down converter coupled to an oscillator between a first voltage supply and a second voltage supply. The second stage is coupled to the first stage, and the second stage has a current bias generator coupled to a diode-connected transistor between the first voltage supply and the second voltage supply. The second stage provides an intermediate voltage to the first stage.

Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate transfer of stored values between the volatile and non-volatile memory bitcells.