Abstract: A method of processing a substrate is disclosed which includes depositing a layer in a processing chamber on a field region, a sidewall region, and a fill region of a feature of the substrate, wherein a hardness of a portion of the layer deposited on the sidewall region is lower than a hardness of a portion of the layer deposited on the field region, and lower than a hardness of a portion of the layer deposited on the fill region.

Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20° C. to about 300° C. during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.

Abstract: One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

Abstract: Embodiments of the present disclosure provide protective coatings, i.e., diffusion and thermal barrier coatings, for aluminum alloy substrates. In particular, embodiments described herein provide a protective layer stack comprising a tantalum nitride layer disposed on an aluminum alloy substrate and a ceramic layer disposed on the tantalum nitride layer. In some embodiments, the aluminum alloy substrates comprise processing chambers and processing chamber components used in the field of electronic device manufacturing, e.g., semiconductor device manufacturing. In one embodiment, an article includes a substrate, a tantalum nitride layer disposed on the substrate, and a ceramic layer disposed on the tantalum nitride layer.

Abstract: Embodiments of the present disclosure are directed towards a protective multilayer coating for process chamber components exposed to temperatures from about 20° C. to about 300° C. during use of the process chamber. The protective multilayer coating comprises a bond layer and a top layer, the bond layer is formed on a chamber component to reduce the stress between the top layer and the chamber component. The reduced stress decreases or prevents particle shedding from the top layer of the multilayer coating during and after use of the process chamber. The bond layer comprises titanium, titanium nitride, aluminum, or combinations thereof, and the top layer comprises tungsten nitride.

Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side, a first dielectric adjacent a second side of the powered electrode and at least one second dielectric adjacent the first dielectric on a side opposite the first dielectric. The sum of the thicknesses of the first dielectric and each of the second dielectrics is in the range of about 10 mm to about 17 mm.

Abstract: A seal ring for an electrochemical processor does not slip or deflect laterally when pressed against a wafer surface. The seal ring may be on a rotor of the processor, with the seal ring having an outer wall joined to a tip arc through an end. The outer wall may be a straight wall. A relatively rigid support ring may be attached to the seal ring, to provide a more precise sealing dimension. Knife edge seal rings that slip or deflect laterally on the wafer surface may also be used. In these designs, the slipping is substantially uniform and consistent, resulting in improved performance.

Abstract: A seal ring for an electrochemical processor does not slip or deflect laterally when pressed against a wafer surface. The seal ring may be on a rotor of the processor, with the seal ring having an outer wall joined to a tip arc through an end. The outer wall may be a straight wall. A relatively rigid support ring may be attached to the seal ring, to provide a more precise sealing dimension. Knife edge seal rings that slip or deflect laterally on the wafer surface may also be used. In these designs, the slipping is substantially uniform and consistent, resulting in improved performance.

Abstract: A wheel hub, for use on off-highway vehicles, includes a first flange defining a wheel axis and a second flange spaced apart from the first flange along the wheel axis. The first flange includes a generally annular attachment face generally orthogonal to the wheel axis, while the second flange includes an axially inward side confronting the attachment face. The wheel hub also includes a plurality of rungs extending from the first flange to the second flange. Torque is transferred between the first flange and the second flange via the plurality of rungs. Additionally, the wheel hub includes a lubricant retention structure associated with at least one of the first flange and the second flange at a radially inward surface thereof.

Abstract: Target assemblies for use in a substrate processing system are provided herein. In some embodiments, a target assembly for use in a substrate processing system may include a source material, a backing plate configured to support the source material on a front side of the backing plate, and a central support member to support the target assembly within the substrate processing system, wherein the central support member is coupled to a center portion of the backing plate and extends perpendicularly away from the backside of the backing plate.

Abstract: A seal ring for an electrochemical processor does not slip or deflect laterally when pressed against a wafer surface. The seal ring may be on a rotor of the processor, with the seal ring having an outer wall joined to a tip arc through an end. The outer wall may be a straight wall. A relatively rigid support ring may be attached to the seal ring, to provide a more precise sealing dimension. Knife edge seal rings that slip or deflect laterally on the wafer surface may also be used. In these designs, the slipping is substantially uniform and consistent, resulting in improved performance.

Abstract: A wheel hub, for use on off-highway vehicles, includes a first flange defining a wheel axis and a second flange spaced apart from the first flange along the wheel axis. The first flange includes a generally annular attachment face generally orthogonal to the wheel axis, while the second flange includes an axially inward side confronting the attachment face. The wheel hub also includes a plurality of rungs extending from the first flange to the second flange. Torque is transferred between the first flange and the second flange via the plurality of rungs. Additionally, the wheel hub includes a lubricant retention structure associated with at least one of the first flange and the second flange at a radially inward surface thereof.