Abstract: A micellar solution is used to seal pores exposed at the bottom and sidewall surfaces of a structure etched in or through a porous low dielectric constant material. The micellar solution is also effective to clean away etch residues from the etched structure.

Abstract: Methods for removing a photoresist from a metal-comprising material are provided. In accordance with an exemplary embodiment of the present invention, the method comprises applying to the photoresist a substantially non-aqueous-based solvent having a pH no less than about 9 or no pH and subsequently applying to the metal-comprising material an aqueous-based fluid having a pH no less than about 9.

Abstract: A method for removing a etch residue (e.g., polymer or particle) from a semiconductor structure and using a cleaning chemistry and the composition of the chemistry is described. By providing a semiconductor structure with etch residue on it, the semiconductor substrate is then placed in a chemistry to remove the particle, wherein the chemistry comprises dilute hydrofluoric acid and a carboxylic acid. In one embodiment the carboxylic acid is selected from tartaric acid, acetic acid, citric acid, glycolic acid, oxalic acid, salicyclic acid, or phthalic acid, and the dilute hydrofluoric acid is approximately 0.1 weight % of hydrofluoric acid.

Abstract: Methods for fabricating a semiconductor device from a semiconductor substrate having a metal-comprising material and a disposable material are provided. In accordance with an exemplary embodiment, the method comprises providing a system for exposing the disposable material to a liquid chemistry and removing oxygen from the system. The disposable material is exposed to the liquid chemistry and is removed from the semiconductor substrate using the liquid chemistry and simultaneously the metal-comprising material is left substantially in tact.

Abstract: Methods for removing metal-comprising materials from semiconductor materials are provided. In accordance with an exemplary embodiment, a method comprises providing a metal-comprising material overlying a semiconductor material and exposing the metal-comprising material to an aqueous non-chlorine-comprising acid solution having a pH of about less 7.

Abstract: Aqueous liquid cleaning composition for wet cleaning of the sidewalls and bottom of vias formed in a dielectric layer of a semiconductor device, said composition comprising: c) hydrofluoric acid; d) a corrosion inhibitor which is a polyazo corrosion inhibitor or carboxylic acid corrosion inhibitor.

Abstract: Methods for fabricating a semiconductor device from a semiconductor substrate having a metal-comprising material and a disposable material are provided. In accordance with an exemplary embodiment, the method comprises providing a system for exposing the disposable material to a liquid chemistry and removing oxygen from the system. The disposable material is exposed to the liquid chemistry and is removed from the semiconductor substrate using the liquid chemistry and simultaneously the metal-comprising material is left substantially in tact.

Abstract: Methods for removing metal-comprising materials from semiconductor materials are provided. In accordance with an exemplary embodiment, a method comprises providing a metal-comprising material overlying a semiconductor material and exposing the metal-comprising material to an aqueous non-chlorine-comprising acid solution having a pH of about less 7.

Abstract: Methods for removing a photoresist from a metal-comprising material are provided. In accordance with an exemplary embodiment of the present invention, the method comprises applying to the photoresist a substantially non-aqueous-based solvent having a pH no less than about 9 or no pH and subsequently applying to the metal-comprising material an aqueous-based fluid having a pH no less than about 9.

Abstract: A micellar solution is used to seal pores exposed at the bottom and sidewall surfaces of a structure etched in or through a porous low dielectric constant material. The micellar solution is also effective to clean away etch residues from the etched structure.

Abstract: A method for cleaning, especially by removing etch residue (e.g., polymers or particles) from a semiconductor structure, and a cleaning chemistry is described. The method of cleaning includes placing the semiconductor structure with an etch residue particle on it in a chemistry to remove the particle, wherein the active component of the chemistry consists of a carboxylic acid having equal numbers of COOH and OH groups. In one embodiment, the carboxylic acid is tartaric acid. In one embodiment, the chemistry further comprises water.

Abstract: A method for removing a etch residue (e.g., polymer or particle) from a semiconductor structure and using a cleaning chemistry and the composition of the chemistry is described. By providing a semiconductor structure with etch residue on it, the semiconductor substrate is then placed in a chemistry to remove the particle, wherein the chemistry comprises dilute hydrofluoric acid and a carboxylic acid. In one embodiment the carboxylic acid is selected from tartaric acid, acetic acid, citric acid, glycolic acid, oxalic acid, salicyclic acid, or phthalic acid, and the dilute hydrofluoric acid is approximately 0.1 weight % of hydrofluoric acid.

Abstract: A method is provided herein for cleaning a semiconductor device. In accordance with the method, a semiconductor device is provided (11), and a micellar solution is applied (13) to the semiconductor device. The method is particularly useful for cleaning copper and silicon surfaces and removing processing residues from the surfaces of vias or trenches.