Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.

Abstract: A semiconductor device and a method of forming the semiconductor device are disclosed. A method includes forming a gate stack over a semiconductor structure. The gate stack is recessed to form a first recess. A first dielectric layer is formed along a bottom and sidewalls of the first recess, the first dielectric layer having a first etch rate. A second dielectric layer is formed over the first dielectric layer, the second dielectric layer having a second etch rate, the first etch rate being higher than the second etch rate. A third dielectric layer is formed over the second dielectric layer. An etch rate of a portion of the third dielectric layer is altered. The first dielectric layer, the second dielectric layer, and the third dielectric layer are recessed to form a second recess. A capping layer is formed in the second recess.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor device having an enhanced gap fill layer in trenches. The present disclosure provides a novel gap fill layer formed using a multi-step deposition and in-situ treatment process. The deposition process can be a flowable chemical vapor deposition (FCVD) utilizing one or more assist gases and molecules of low reactive sticking coefficient (RSC). The treatment process can be an in-situ process after the deposition process and includes exposing the deposited gap fill layer to plasma activated assist gas. The assist gas can be formed of ammonia. The low RSC molecule can be formed of trisilylamin (TSA) or perhydropolysilazane (PHPS).

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.

Abstract: A semiconductor device and a method of forming the semiconductor device are disclosed. A method includes forming a gate stack over a semiconductor structure. The gate stack is recessed to form a first recess. A first dielectric layer is formed along a bottom and sidewalls of the first recess, the first dielectric layer having a first etch rate. A second dielectric layer is formed over the first dielectric layer, the second dielectric layer having a second etch rate, the first etch rate being higher than the second etch rate. A third dielectric layer is formed over the second dielectric layer. An etch rate of a portion of the third dielectric layer is altered. The first dielectric layer, the second dielectric layer, and the third dielectric layer are recessed to form a second recess. A capping layer is formed in the second recess.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.

Abstract: A semiconductor device and a method of forming the semiconductor device are disclosed. A method includes forming a gate stack over a semiconductor structure. The gate stack is recessed to form a first recess. A first dielectric layer is formed along a bottom and sidewalls of the first recess, the first dielectric layer having a first etch rate. A second dielectric layer is formed over the first dielectric layer, the second dielectric layer having a second etch rate, the first etch rate being higher than the second etch rate. A third dielectric layer is formed over the second dielectric layer. An etch rate of a portion of the third dielectric layer is altered. The first dielectric layer, the second dielectric layer, and the third dielectric layer are recessed to form a second recess. A capping layer is formed in the second recess.

Abstract: A method includes performing an atomic layer deposition (ALD) process to deposit a dielectric material over a substrate, curing the deposited dielectric material using an ultra violet (UV) light, and annealing the deposited dielectric material after the curing.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.

Abstract: A semiconductor device and a method of forming the semiconductor device are disclosed. A method includes forming a gate stack over a semiconductor structure. The gate stack is recessed to form a first recess. A first dielectric layer is formed along a bottom and sidewalls of the first recess, the first dielectric layer having a first etch rate. A second dielectric layer is formed over the first dielectric layer, the second dielectric layer having a second etch rate, the first etch rate being higher than the second etch rate. A third dielectric layer is formed over the second dielectric layer. An etch rate of a portion of the third dielectric layer is altered. The first dielectric layer, the second dielectric layer, and the third dielectric layer are recessed to form a second recess. A capping layer is formed in the second recess.

Abstract: A method includes performing an atomic layer deposition (ALD) process to deposit a dielectric material over a substrate, curing the deposited dielectric material using an ultra violet (UV) light, and annealing the deposited dielectric material after the curing.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor device having an enhanced gap fill layer in trenches. The present disclosure provides a novel gap fill layer formed using a multi-step deposition and in-situ treatment process. The deposition process can be a flowable chemical vapor deposition (FCVD) utilizing one or more assist gases and molecules of low reactive sticking coefficient (RSC). The treatment process can be an in-situ process after the deposition process and includes exposing the deposited gap fill layer to plasma activated assist gas. The assist gas can be formed of ammonia. The low RSC molecule can be formed of trisilylamin (TSA) or perhydropolysilazane (PHPS).

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor device having an enhanced gap fill layer in trenches. The present disclosure provides a novel gap fill layer formed using a multi-step deposition and in-situ treatment process. The deposition process can be a flowable chemical vapor deposition (FCVD) utilizing one or more assist gases and molecules of low reactive sticking coefficient (RSC). The treatment process can be an in-situ process after the deposition process and includes exposing the deposited gap fill layer to plasma activated assist gas. The assist gas can be formed of ammonia. The low RSC molecule can be formed of trisilylamin (TSA) or perhydropolysilazane (PHPS).

Abstract: A method includes performing an atomic layer deposition (ALD) process to deposit a dielectric material over a substrate, curing the deposited dielectric material using an ultra violet (UV) light, and annealing the deposited dielectric material after the curing.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a semiconductor device having an enhanced gap fill layer in trenches. The present disclosure provides a novel gap fill layer formed using a multi-step deposition and in-situ treatment process. The deposition process can be a flowable chemical vapor deposition (FCVD) utilizing one or more assist gases and molecules of low reactive sticking coefficient (RSC). The treatment process can be an in-situ process after the deposition process and includes exposing the deposited gap fill layer to plasma activated assist gas. The assist gas can be formed of ammonia. The low RSC molecule can be formed of trisilylamin (TSA) or perhydropolysilazane (PHPS).

Abstract: A semiconductor device and a method of forming the semiconductor device are disclosed. A method includes forming a gate stack over a semiconductor structure. The gate stack is recessed to form a first recess. A first dielectric layer is formed along a bottom and sidewalls of the first recess, the first dielectric layer having a first etch rate. A second dielectric layer is formed over the first dielectric layer, the second dielectric layer having a second etch rate, the first etch rate being higher than the second etch rate. A third dielectric layer is formed over the second dielectric layer. An etch rate of a portion of the third dielectric layer is altered. The first dielectric layer, the second dielectric layer, and the third dielectric layer are recessed to form a second recess. A capping layer is formed in the second recess.

Abstract: A method includes performing an atomic layer deposition (ALD) process to deposit a dielectric material over a substrate, curing the deposited dielectric material using an ultra violet (UV) light, and annealing the deposited dielectric material after the curing.