Abstract: A method of cleaning a substrate in a megasonic cleaning chamber, comprises: flowing a cleaning fluid through a supply tube in a megasonic cleaning chamber toward a substrate; using a megasonic transducer to generate megasonic waves through the cleaning fluid and create cavities in the cleaning fluid; and using one or more sensors to determine properties of the cavities in-situ based on emissions received from the cavities. A non-transitory computer readable medium has instructions stored thereon that, when executed, causes the method to be performed.

Abstract: Methods and apparatus for contacting a substrate with a plasma at a pressure from about 300 Torr to about 1000 Torr for a period of time sufficient to heat a top portion of the substrate having a depth of less than about 200 nm, to a temperature high enough for annealing, and the temperature of the substrate at a depth of greater than or equal to about 200 nm is less than or equal to about 450° C.

Abstract: Embodiments of baking chambers are provided herein. In some embodiments, a baking chamber for baking a substrate includes: a chamber body enclosing an interior volume; a heater disposed in the interior volume, wherein the heater is configured to have a surface temperature of about 100 to about 400 degrees Celsius during use; a shroud disposed in the interior volume opposite the heater, wherein the shroud includes a central opening fluidly coupled to a gas inlet; a plurality of substrate lift pins configured to support a substrate in the interior volume between the heater and the shroud, wherein the shroud includes a plurality of first openings to facilitate the plurality of substrate lift pins; and a gas outlet disposed in the chamber body opposite the shroud such that a gas flow path through the interior volume extends from the gas inlet, around the heater, and to the gas outlet.

Abstract: Embodiments of the present disclosure relate to an oxygen cleaning chamber with UV radiation generator temperature control and a method of atomic oxygen cleaning a substrate. The atomic oxygen cleaning chamber includes a process chamber and a cooling chamber coupled to the process chamber and a divider sealingly separating the process chamber from the cooling chamber. An ultraviolet (UV) radiation generator is disposed in the cooling chamber and provides UV radiation through the divider into the process chamber. A gas distribution assembly distributes ozone over an upper surface of a pedestal in the process chamber and a coolant distribution assembly distributes cooling gas into the cooling chamber to cool the UV radiation generator. By actively cooling the UV radiation generator, a higher intensity UV radiation at a stable wavelength is produced, i.e., without wavelength drift normally associated with high power UV radiation generator outputs.

Abstract: An automatic photomask handling assembly is employed for holding a photomask for cleaning processes in an atmospheric pressure plasma (APP) chamber. The automatic photomask handling assembly includes a set of stationary standoffs with each of the stationary standoffs having a first end solidly mounted to the photomask handling assembly and a second end that contacts an underside of a photomask. The automatic photomask handling assembly also has a handling stage that holds the photomask for processing. The handling stage has a set of through openings that allow the set of stationary standoffs to pass through the handling stage as the handling stage moves vertically. The handling stage also has a set of plates that automatically clamp and unclamp a photomask as the handling stage moves vertically. The set of plates completely surrounds the photomask such that the clamped photomask and the set of plates form a continuous surface.

Abstract: A cleaning apparatus for cleaning a substrate wherein the substrate is contacted with ozonated water and irradiating the substrate and the ozonated water with UV electromagnetic radiation from a UV lamp within a cleaning chamber; wherein greater than or equal to about 50% of the UV electromagnetic radiation has a wavelength of greater than or equal to about 280 nm. Methods of cleaning a substrate are also presented.

Abstract: Embodiments of the present disclosure relate to an oxygen cleaning chamber with UV radiation generator temperature control and a method of atomic oxygen cleaning a substrate. The atomic oxygen cleaning chamber includes a process chamber and a cooling chamber coupled to the process chamber and a divider sealingly separating the process chamber from the cooling chamber. An ultraviolet (UV) radiation generator is disposed in the cooling chamber and provides UV radiation through the divider into the process chamber. A gas distribution assembly distributes ozone over an upper surface of a pedestal in the process chamber and a coolant distribution assembly distributes cooling gas into the cooling chamber to cool the UV radiation generator. By actively cooling the UV radiation generator, a higher intensity UV radiation at a stable wavelength is produced, i.e., without wavelength drift normally associated with high power UV radiation generator outputs.

Abstract: Methods and apparatus for reducing ruthenium oxide on an extreme ultraviolet (EUV) photomask leverage temperature, plasma, and chamber pressure to increase the reduction. In some embodiments, a method includes heating the EUV photomask with a ruthenium (Ru) capping layer with a top surface which has a Ru oxide layer to a temperature of approximately 100 degrees Celsius to approximately a thermal budget of the EUV photomask, flowing a reducing agent gas into an EUV photomask processing chamber, and pressurizing the EUV photomask processing chamber to a process pressure to increase a reducing reaction between the reducing agent gas and a Ru oxide layer on the Ru capping layer. Other embodiments may incorporate remote plasma generators or atmospheric-pressure plasma generators to enhance the reduction of Ru oxides on the Ru capping layer.

Abstract: Embodiments of baking chambers for baking a substrate and methods of use thereof are provided herein. In some embodiments, a multi-chamber process tool for processing a substrate including: a wet clean chamber for cleaning the substrate; and a baking chamber configured to heat the substrate to remove residue or haze left over after a wet clean process performed in the wet clean chamber, the baking chamber comprising: a chamber body enclosing an interior volume; a heater disposed in the interior volume, wherein the heater is configured to have a surface temperature of about 100 to about 400 degrees Celsius during use; a substrate support configured to support a substrate disposed in the interior volume, wherein the substrate support has a direct line of sight with the heater such that the heater heats the substrate support via convection; and a gas inlet and a gas outlet coupled to the interior volume.

Abstract: Embodiments described herein relate to oxygen cleaning chambers and a method of atomic oxygen cleaning a substrate. The oxygen cleaning chambers and method of atomic oxygen cleaning a substrate provide for generation of atomic oxygen in situ to oxidize materials on the surfaces of the substrate. The atomic oxygen cleaning chamber includes a chamber body, a chamber lid, a processing volume defined by the chamber body and the chamber lid, an UV radiation generator including one or more UV radiation sources, a pedestal disposed in the processing volume, and a gas distribution assembly. The pedestal has a processing position corresponding to a distance from the UV radiation generator to an upper surface of the pedestal. The gas distribution assembly is configured to be connected to an ozone generator to distribute ozone over the upper surface of the pedestal.

Abstract: Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.

Abstract: A cleaning apparatus for cleaning a substrate includes a lamp for emitting ultraviolet radiation in an irradiation region; a housing that houses the lamp; a water deflector spaced below the housing, the water deflector having a water inlet for receiving a supply of ozonated water and a water outlet for discharging ozonated water irradiated by the lamp into a substrate processing region beneath the water deflector, and defining a water flow path between the water inlet and the water outlet, the water flow path extending in the irradiation region; an upper reflector extending along and above the lamp; and a lower reflector extending along and below the water deflector, wherein the upper reflector and the lower reflector at least partially define the irradiation region and reflect ultraviolet radiation toward the water flow path, and wherein the lower reflector shields the substrate from ultraviolet radiation emitted by the lamp.

Abstract: Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.

Abstract: A cleaning apparatus for cleaning a substrate includes a lamp for emitting ultraviolet radiation in an irradiation region; a housing that houses the lamp; a water deflector spaced below the housing, the water deflector having a water inlet for receiving a supply of ozonated water and a water outlet for discharging ozonated water irradiated by the lamp into a substrate processing region beneath the water deflector, and defining a water flow path between the water inlet and the water outlet, the water flow path extending in the irradiation region; an upper reflector extending along and above the lamp; and a lower reflector extending along and below the water deflector, wherein the upper reflector and the lower reflector at least partially define the irradiation region and reflect ultraviolet radiation toward the water flow path, and wherein the lower reflector shields the substrate from ultraviolet radiation emitted by the lamp.

Abstract: Embodiments of megasonic cleaning chambers are provided herein. In some embodiments, a megasonic cleaning chamber includes: a chamber body defining an interior volume therein; a substrate support to support a substrate disposed in the interior volume; a supply tube comprising a transparent material configured to direct a cleaning fluid to the substrate support; a megasonic power generator coupled to the supply tube to provide megasonic power to the cleaning fluid; a megasonic transducer coupled to the megasonic power generator and the supply tube to create megasonic waves in the cleaning fluid and to form cavities in the cleaning fluid, wherein the megasonic transducer is configured to direct the megasonic waves and cavities toward the substrate support; and one or more sensors configured to generate a signal indicative of a property of the cavities in the cleaning fluid.

Abstract: Embodiments of megasonic cleaning chambers are provided herein. In some embodiments, a megasonic cleaning chamber includes: a chamber body defining an interior volume therein; a substrate support to support a substrate disposed in the interior volume; a supply tube comprising a transparent material configured to direct a cleaning fluid to the substrate support; a megasonic power generator coupled to the supply tube to provide megasonic power to the cleaning fluid; a megasonic transducer coupled to the megasonic power generator and the supply tube to create megasonic waves in the cleaning fluid and to form cavities in the cleaning fluid, wherein the megasonic transducer is configured to direct the megasonic waves and cavities toward the substrate support; and one or more sensors configured to generate a signal indicative of a property of the cavities in the cleaning fluid.

Abstract: Embodiments of baking chambers for baking a photomask are provided herein. In some embodiments, a baking chamber includes: a chamber body enclosing a first interior volume and a second interior volume, disposed beneath and fluidly independent from the first interior volume; a radiant heat source disposed in the first interior volume; a photomask support structure configured to support a photomask disposed in the second interior volume; a window disposed between the first interior volume the second interior volume, wherein the window is made of a material that is transparent to thermal radiation; a first gas inlet and a first gas outlet coupled to the first interior volume; and a second gas inlet and a second gas outlet coupled to the second interior volume on opposite ends thereof to facilitate flow of a process gas laterally through the second interior volume and across the photomask support structure.

Abstract: Embodiments of megasonic cleaning chambers are provided herein. In some embodiments, a megasonic cleaning chamber includes: a chamber body defining an interior volume therein; a substrate support to support a substrate disposed in the interior volume; a supply tube comprising a transparent material configured to direct a cleaning fluid to the substrate support; a megasonic power generator coupled to the supply tube to provide megasonic power to the cleaning fluid; a megasonic transducer coupled to the megasonic power generator and the supply tube to create megasonic waves in the cleaning fluid and to form cavities in the cleaning fluid, wherein the megasonic transducer is configured to direct the megasonic waves and cavities toward the substrate support; and one or more sensors configured to generate a signal indicative of a property of the cavities in the cleaning fluid.

Abstract: A cleaning apparatus for cleaning a substrate includes a lamp for emitting ultraviolet radiation in an irradiation region; a housing that houses the lamp; a water deflector spaced below the housing, the water deflector having a water inlet for receiving a supply of ozonated water and a water outlet for discharging ozonated water irradiated by the lamp into a substrate processing region beneath the water deflector, and defining a water flow path between the water inlet and the water outlet, the water flow path extending in the irradiation region; an upper reflector extending along and above the lamp; and a lower reflector extending along and below the water deflector, wherein the upper reflector and the lower reflector at least partially define the irradiation region and reflect ultraviolet radiation toward the water flow path, and wherein the lower reflector shields the substrate from ultraviolet radiation emitted by the lamp.

Abstract: Embodiments of baking chambers are provided herein. In some embodiments, a baking chamber for baking a substrate includes: a chamber body enclosing an interior volume; a heater disposed in the interior volume, wherein the heater is configured to have a surface temperature of about 100 to about 400 degrees Celsius during use; a shroud disposed in the interior volume opposite the heater, wherein the shroud includes a central opening fluidly coupled to a gas inlet; a plurality of substrate lift pins configured to support a substrate in the interior volume between the heater and the shroud, wherein the shroud includes a plurality of first openings to facilitate the plurality of substrate lift pins; and a gas outlet disposed in the chamber body opposite the shroud such that a gas flow path through the interior volume extends from the gas inlet, around the heater, and to the gas outlet.