Patents by Inventor Bao-chang Lin

Bao-chang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for treating waste gas containing PFC and/or HFC
    Patent number: 6838065
    Abstract: A method for treating waste gas containing PFC and/or HFC, comprising contacting a mixture of gas waste containing PFC and/or HFC, ozone, and water with an iron oxide catalyst at a temperature between 50 and 300° C. by gas-solid contact to perform an oxidation reaction for reducing the amount of PFC and/or HFC. An apparatus for treating waste gas containing PFC or HFC is also provided. The operational temperature in the present invention is much lower than the prior art, and thus provides lower energy consumption and little risk of fire. The present invention is suitable for the treatment of waste gas containing PFC and/or HFC, especially for the removal of perfluorocompounds from the waste gas generated by semiconductor and photoelectrical product manufacturing plants.
    Type: Grant
    Filed: April 30, 2003
    Date of Patent: January 4, 2005
    Assignee: Industrial Technology Research Institute
    Inventors: Shu-Sung Lin, Bao-chang Lin, Hsin-Hsien Wu
  • Method and apparatus for treating waste gas containing PFC and/or HFC
    Publication number: 20040146442
    Abstract: A method for treating waste gas containing PFC and/or HFC, comprising contacting a mixture of gas waste containing PFC and/or HFC, ozone, and water with an iron oxide catalyst at a temperature between 50 and 300° C. by gas-solid contact to perform an oxidation reaction for reducing the amount of PFC and/or HFC. An apparatus for treating waste gas containing PFC or HFC is also provided. The operational temperature in the present invention is much lower than the prior art, and thus provides lower energy consumption and little risk of fire. The present invention is suitable for the treatment of waste gas containing PFC and/or HFC, especially for the removal of perfluorocompounds from the waste gas generated by semiconductor and photoelectrical product manufacturing plants.
    Type: Application
    Filed: April 30, 2003
    Publication date: July 29, 2004
    Inventors: Shu-Sung Lin, Bao-chang Lin, Hsin-Hsien Wu