Patents by Inventor Bao Guang Wen

Bao Guang Wen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a MIM (metal-insulator-metal) capacitor
    Patent number: 6780727
    Abstract: Methods for forming a metal-insulator-metal (MIM) capacitor using an organic anti-reflective coating (ARC) are described. The first electrode of the MIM capacitor is formed from a first metal layer. The organic ARC is applied, and the second electrode of the MIM capacitor is formed from a second metal layer. The organic ARC is then removed using a nominal clean technique. Because the organic ARC is removed, the performance of the MIM capacitor is improved. Specifically, the breakdown voltage of the MIM capacitor increases and the leakage current decreases.
    Type: Grant
    Filed: April 25, 2002
    Date of Patent: August 24, 2004
    Assignee: Chartered Semiconductor Manufacturing Limited
    Inventors: Ng Chit Hwei, Shao Kai, Bao Guang Wen, Tjoa Tjin Tjin, Sanford Chu
  • Method for forming a MIM (metal-insulator-metal) capacitor
    Publication number: 20030203584
    Abstract: Methods for forming a metal-insulator-metal (MIM) capacitor using an organic anti-reflective coating (ARC) are described. The first electrode of the MIM capacitor is formed from a first metal layer. The organic ARC is applied, and the second electrode of the MIM capacitor is formed from a second metal layer. The organic ARC is then removed using a nominal clean technique. Because the organic ARC is removed, the performance of the MIM capacitor is improved. Specifically, the breakdown voltage of the MIM capacitor increases and the leakage current decreases.
    Type: Application
    Filed: April 25, 2002
    Publication date: October 30, 2003
    Inventors: Ng Chit Hwei, Shao Kai, Bao Guang Wen, Tjoa Tjin Tjin, Sanford Chu