Patents by Inventor Baodan ZHAO

Baodan ZHAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240090317
    Abstract: Provided are a perovskite material with stable bipolar molecules and a photoelectric device. The invention aims to provide the perovskite material with the stable bipolar molecules and the photoelectric device, which can indirectly enhance an interaction between metal cations and halogen anions, reduce a defect state density in the perovskite material, and inhibit ion migration in the perovskite material by utilizing bipolar groups in a bipolar molecule stabilizer. A component of the perovskite material with the stable bipolar molecules is D: A?2An?1BnX3n+1 or D: ABX3, wherein A? is an organic amine cation, A is a monovalent cation, B is a metal cation, X is a monovalent anion, and D is the bipolar molecule stabilizer. A thermal stability, a phase stability and a photoluminescence stability of the material are remarkably enhanced, and working stabilities and efficiencies of the perovskite material and the photoelectric device are remarkably improved.
    Type: Application
    Filed: November 1, 2023
    Publication date: March 14, 2024
    Inventors: Dawei DI, Bingbing GUO, Yaxiao LIAN, Baodan ZHAO
  • Patent number: 11818941
    Abstract: An optoelectronic device includes a semiconductor substrate, wherein a first transport layer is formed on a first partial region of the semiconductor substrate; a first insulation layer is formed on a second partial region around the first partial region; the first transport layer is formed on the first insulation layer; an interface layer is formed on the first transport layer; a light-emitting material layer containing perovskite material is formed on the interface layer; a second insulation layer is formed on the light-emitting material layer in the second partial region and on the light-emitting material layer near a second partial region side in the first partial region, so that the characteristic size of a single light-emitting pixel or effective working region is adjustable.
    Type: Grant
    Filed: November 30, 2022
    Date of Patent: November 14, 2023
    Assignee: ZHEJIANG UNIVERSITY
    Inventors: Dawei Di, Yaxiao Lian, Chungen Hsu, Shun Tian, Baodan Zhao
  • Publication number: 20230105812
    Abstract: An optoelectronic device includes a semiconductor substrate, wherein a first transport layer is formed on a first partial region of the semiconductor substrate; a first insulation layer is formed on a second partial region around the first partial region; the first transport layer is formed on the first insulation layer; an interface layer is formed on the first transport layer; a light-emitting material layer containing perovskite material is formed on the interface layer; a second insulation layer is formed on the light-emitting material layer in the second partial region and on the light-emitting material layer near a second partial region side in the first partial region, so that the characteristic size of a single light-emitting pixel or effective working region is adjustable.
    Type: Application
    Filed: November 30, 2022
    Publication date: April 6, 2023
    Inventors: Dawei DI, Yaxiao LIAN, Chungen HSU, Shun TIAN, Baodan ZHAO
  • Publication number: 20210365607
    Abstract: A photon confinement theoretical model is proposed, and a solar cell structure model is designed based on the theoretical model, thereby providing a photonically-confined solar cell and optoelectronic device to effectively reduce the probability of photons escaping from the cell.
    Type: Application
    Filed: May 18, 2021
    Publication date: November 25, 2021
    Applicant: Zhejiang University
    Inventors: Dawei DI, Yaxiao LIAN, Qian ZHOU, Baodan ZHAO