Patents by Inventor Baodi Li

Baodi Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for preparing Schottky diode and Schottky diode
    Patent number: 12727181
    Abstract: A method includes: oxidizing a target N+-type gallium oxide substrate to obtain a first N?-type gallium oxide drift layer formed on an upper surface of the target N+-type gallium oxide substrate and a second N?-type gallium oxide drift layer formed on a lower surface of the target N+-type gallium oxide substrate; preparing a first anode electrode on an upper surface of the first N?-type gallium oxide drift layer and a second anode electrode on a lower surface of the second N?-type gallium oxide drift layer; cutting the target N+-type gallium oxide substrate, to obtain a first N+-type gallium oxide substrate and a second N+-type gallium oxide substrate; and preparing a first cathode electrode on a lower surface of the first N+-type gallium oxide substrate and a second cathode electrode on an upper surface of the second N+-type gallium oxide substrate, to obtain two Schottky diodes.
    Type: Grant
    Filed: December 22, 2023
    Date of Patent: September 1, 2026
    Assignee: The 13th Research Institute of China Electronics Technology Group Corporation
    Inventors: Yuanjie Lv, Yuangang Wang, Hongyu Liu, Zhe Qin, Baodi Li, Baorui Sun, Guo Zhou, Aimin Bu, Zhihong Feng
  • Method for Preparing Schottky Diode and Schottky Diode
    Publication number: 20260020267
    Abstract: A method includes: oxidizing a target N+-type gallium oxide substrate to obtain a first N?-type gallium oxide drift layer formed on an upper surface of the target N+-type gallium oxide substrate and a second N?-type gallium oxide drift layer formed on a lower surface of the target N+-type gallium oxide substrate; preparing a first anode electrode on an upper surface of the first N?-type gallium oxide drift layer and a second anode electrode on a lower surface of the second N?-type gallium oxide drift layer; cutting the target N+-type gallium oxide substrate, to obtain a first N+-type gallium oxide substrate and a second N+-type gallium oxide substrate; and preparing a first cathode electrode on a lower surface of the first N+-type gallium oxide substrate and a second cathode electrode on an upper surface of the second N+-type gallium oxide substrate, to obtain two Schottky diodes.
    Type: Application
    Filed: December 22, 2023
    Publication date: January 15, 2026
    Inventors: Yuanjie Lv, Yuangang Wang, Hongyu Liu, Zhe Qin, Baodi Li, Baorui Sun, Guo Zhou, Aimin Bu, Zhihong Feng