Abstract: A doped diamond particle-based three-dimensional electrode for water treatment and a preparation method therefor are provided. A boron-doped diamond plate electrode is used as an anode electrode, a titanium plate is used as a cathode electrode, and doped diamond particles are used as a filler that is assembled to form a filler module. The doped diamond particles include a core material, and a doped diamond film coating the core material. The doping element is one or more selected from boron, nitrogen, phosphorus, and lithium; and the core material is at least one selected from diamond particles, boron-doped diamond particles, metal particles, and ceramic particles. Doped diamond particles having a loose porous structure are used as a filler, to greatly increase the electrochemical active area and the adsorbable area.

Abstract: A high-specific surface area and super-hydrophilic gradient boron-doped diamond electrode is disclosed. The electrode directly uses a substrate as an electrode matrix; or a transition layer is disposed on a surface of the substrate and used as the electrode matrix. A gradient boron-doped diamond layer is disposed on a surface of the electrode matrix, and a contact angle of the electrode is ?<40°. The gradient boron-doped diamond layer includes: a gradient boron-doped diamond bottom layer, a gradient boron-doped diamond middle layer, and a gradient boron-doped diamond top layer, a boron content of which gradually increases, so the gradient boron-doped diamond layer has high adhesion, high corrosion resistance, and high catalytic activity.

Abstract: A boron-doped diamond electrode with an ultra-high specific surface area, and a preparation method therefor and the application thereof are provided. The boron-doped diamond electrode includes a substrate and an electrode working layer arranged on a surface thereof, the substrate is polysilicon or monocrystal silicon with a high specific surface area, and the electrode working layer is a boron-doped diamond layer. The polysilicon with a high specific surface area is obtained by anisotropIc etching and/or isotropic etching, and the monocrystal silicon with a high specific surface area is obtained by anisotropic etching. The boron-doped diamond layer includes a highly conductive layer, a corrosion-resistant layer, and a strongly electrocatalytically active layer, which have different boron contents.