Abstract: Disclosed is a method for resource recycling of high-salinity wastewater treated by a solar-enhanced electrochemical process. The method includes: step S1: subjecting the high-salinity wastewater to an ion membrane electrolysis process to generate a strongly oxidizing salt solution A; step S2: mixing the strongly oxidizing salt solution A with organic wastewater to obtain a mixed solution, and activating and degrading the mixed solution with a photothermal coupled activation degradation system to obtain an activated and degraded solution; step S3: degrading the activated and degraded solution through an electrochemical oxidation degradation component to obtain a high-salinity solution; step S4: evaporating and concentrating the high-salinity solution to obtain a high-salinity concentrate; step S5: subjecting the high-salinity concentrate to the ion membrane electrolysis process to generate a strongly oxidizing salt solution B; and Step S6: repeating step S2 to step S5.

Abstract: A method for preparing phosphorus-doped graphene using phosphorus-containing sludge and biomass, belonging to the field of solid waste resource utilization and environmental protection technologies, includes: performing a hydrothermal reaction with the phosphorus-containing sludge and the biomass to obtain a product, washing and drying the product to obtain phosphorus-doped hydrochar, and subjecting the phosphorus-doped hydrochar to a flash Joule heating treatment to obtain the phosphorus-doped graphene. The method for preparing the phosphorus-doped graphene by flash Joule heating is based on cheap and easily available phosphorus containing sludge and corn cobs as precursors. The high-quality phosphorus-doped graphene can be obtained by the flash Joule heating after in-situ phosphorus doping by a hydrothermal carbonization method. The method for preparing the phosphorus-doped graphene is controllable, fast, simple and efficient, which is beneficial to large-scale production and application.

Abstract: A doped diamond particle-based three-dimensional electrode for water treatment and a preparation method therefor are provided. A boron-doped diamond plate electrode is used as an anode electrode, a titanium plate is used as a cathode electrode, and doped diamond particles are used as a filler that is assembled to form a filler module. The doped diamond particles include a core material, and a doped diamond film coating the core material. The doping element is one or more selected from boron, nitrogen, phosphorus, and lithium; and the core material is at least one selected from diamond particles, boron-doped diamond particles, metal particles, and ceramic particles. Doped diamond particles having a loose porous structure are used as a filler, to greatly increase the electrochemical active area and the adsorbable area.

Abstract: A high-specific surface area and super-hydrophilic gradient boron-doped diamond electrode is disclosed. The electrode directly uses a substrate as an electrode matrix; or a transition layer is disposed on a surface of the substrate and used as the electrode matrix. A gradient boron-doped diamond layer is disposed on a surface of the electrode matrix, and a contact angle of the electrode is ?<40°. The gradient boron-doped diamond layer includes: a gradient boron-doped diamond bottom layer, a gradient boron-doped diamond middle layer, and a gradient boron-doped diamond top layer, a boron content of which gradually increases, so the gradient boron-doped diamond layer has high adhesion, high corrosion resistance, and high catalytic activity.

Abstract: A boron-doped diamond electrode with an ultra-high specific surface area, and a preparation method therefor and the application thereof are provided. The boron-doped diamond electrode includes a substrate and an electrode working layer arranged on a surface thereof, the substrate is polysilicon or monocrystal silicon with a high specific surface area, and the electrode working layer is a boron-doped diamond layer. The polysilicon with a high specific surface area is obtained by anisotropIc etching and/or isotropic etching, and the monocrystal silicon with a high specific surface area is obtained by anisotropic etching. The boron-doped diamond layer includes a highly conductive layer, a corrosion-resistant layer, and a strongly electrocatalytically active layer, which have different boron contents.