Abstract: A control method and control device for link switching is disclosed. The control method includes (i) receiving a current coded signal from a main data link, the current coded signal containing coded application data, (ii) decoding the current coded signal to determine signal quality, (iii) evaluating a historical coded signal transmitted via the main data link, and (iv) and determining, on the basis of the signal quality and an evaluation result of the historical coded signal, whether to switch to an auxiliary data link to receive the application data.

Abstract: The present disclosure provides a current adjustment circuit. The current adjustment circuit includes a lighting sub-circuit, a dimming switch disposed in the lighting sub-circuit, a switch control sub-circuit connected to the dimming switch and the lighting sub-circuit, and a time control sub-circuit connected to the switch control sub-circuit. Time of switch-off period in a switching cycle of the current adjustment circuit is adjusted under control of the time control sub-circuit and the switch control sub-circuit. Brightness of the current adjustment circuit is adjusted based on the output current of the current adjustment circuit. The present disclosure may reduce or even eliminate influence of factors such as circuit parasitic parameters on an LED light source, ensure consistency of each light source, and optimize display effect of the LED light source.

Abstract: Techniques pertaining to device and method for controlling an analog signal are disclosed. Using a single connection (e.g., a connector or a pin) without an external resistive element (e.g., a resistor), an analog output is digitally controlled and produced. In one embodiment, a precisely controlled current is generated from coded data. A control unit is designed to control a working mode based on an input signal from the connection. The working mode includes a default mode, a programmable mode, a testing mode and a shutdown mode. Under the programmable mode, a user determines a signal coupled in from the connection as desired, and a code unit codes the signal in accordance with a predefined protocol. The code unit then sends the coded data to a decode unit. The decode unit is designed to generate or control the current by the decoded data.

Abstract: Techniques pertaining to device and method for controlling an analog signal are disclosed. Using a single connection (e.g., a connector or a pin) without an external resistive element (e.g., a resistor), an analog output is digitally controlled and produced. According to one aspect of the present invention, a precisely controlled current is generated from a coded data that represents. A control unit is designed to control a working mode based on an input signal from the connection. In one embodiment, the working mode includes a default mode, a programmable mode, a testing mode and a shutdown mode. Under the programmable mode, a user determines a signal coupled in from the connection as desired, and a code unit codes the signal in accordance with a predefined protocol. The code unit then sends the coded data to a decode unit.

Abstract: Epitaxial silicon is grown to form elevated source/drain extensions for transistors on silicon-on-insulator (SOI) substrates. An offset linear layer is formed between the gate and the epitaxial silicon to prevent shorting. In one embodiment, the offset linear layer is a nitride and in another embodiment it is an oxide. The resulting structure decreases extension resistance and improves the scalability of SOI transistors by increasing the thickness of silicon underneath the source and drain regions, while keeping the silicon underneath the gate thin. This allows for the reduction in gate length without decreasing the functionality of the transistor.

Abstract: A zirconium oxide gate dielectric is utilized to make a transistor for an integrated circuit. In forming the transistor which uses the zirconium oxide as the gate dielectric, the zirconium oxide is etched using phosphoric acid. This phosphoric acid is a wet etch performed at an elevated temperature to achieve a simultaneous etch of a silicon nitride anti-reflective coating which overlies the gate. This use of phosphoric acid is effective because the etch is stopped by silicon oxide so that the underlying silicon substrate is protected. Also, the field oxide is not etched in any appreciable amount. Thus, the field oxide thickness is unchanged as a result of the etch.