Abstract: An electrode assembly and a lithium ion electric roll having the same are provided. The electrode assembly includes: a first electrode unit; a first anti-puncture cushion; in which the first electrode unit includes a first electrode sheet, an second electrode sheet, and a separator, the separator is disposed between the first electrode sheet and the second electrode sheet; the first anti-puncture cushion is disposed on a side of the first electrode unit along a width direction, and covers an edge of the first electrode sheet.

Abstract: A wound bare electric roll includes a cathode sheet, an anode sheet and a separator, the separator being arranged between the cathode sheet and the anode sheet. The cathode sheet has an end and an anti-puncture cushion arranged on a tail exposed zone at the end of the cathode sheet. The anti-puncture cushion corresponds to an outer surface of a corner of the anode sheet. A lithium ion battery has a laminated aluminum film, and a wound bare electric roll accommodated in the laminated aluminum film.

Abstract: The present application relates to the filed of energy storage devices, and in particular, relates to a cathode sheet and a lithium ion electric roll using the cathode sheet. The cathode sheet comprises a cathode current collector, an active substance layer, a cathode tab, a head protective adhesive, a tail protective adhesive, an ending adhesive, and an anti-puncture cushion. The cathode current collector comprises a head exposed zone, a head adhesive application zone, a coating zone, a tail adhesive application zone, and a tail exposed zone. The active substance layer covers the coating zone, the head protective adhesive covers the head adhesive application zone, the tail protective adhesive covers the tail adhesive application zone, the ending adhesive is bonded to a tail of the tail exposed zone, and the anti-puncture cushion is connected to the tail exposed zone.

Abstract: The present application relates to the filed of an energy storage component, and in particular, relates to an electrode assembly, and a lithium ion electric roll using the electrode assembly. The electrode assembly comprises a bare electric roll and an anti-puncture cushion; wherein the bare electric roll comprises at least one electrode unit, the electrode unit comprising a cathode sheet, an anode sheet, and a separator, wherein the cathode sheet is isolated from the anode sheet by the separator; and the anti-puncture cushion is arranged on two sides along a width direction of the bare electric roll, and covers an edge of the anode sheet. A lithium ion electric roll comprises a laminated aluminum film and the electrode assembly, wherein the electrode assembly is wrapped by the laminated aluminum film.

Abstract: The present application relates to the filed of energy storage devices, and in particular, relates to a cathode sheet and a lithium ion electric roll using the cathode sheet. The cathode sheet comprises a cathode current collector, an active substance layer, a cathode tab, a head protective adhesive, a tail protective adhesive, an ending adhesive, and an anti-puncture cushion. The cathode current collector comprises a head exposed zone, a head adhesive application zone, a coating zone, a tail adhesive application zone, and a tail exposed zone. The active substance layer covers the coating zone, the head protective adhesive covers the head adhesive application zone, the tail protective adhesive covers the tail adhesive application zone, the ending adhesive is bonded to a tail of the tail exposed zone, and the anti-puncture cushion is connected to the tail exposed zone.

Abstract: Systems, methods, and other embodiments associated with echo cancellation are described. According to one embodiment, an apparatus includes a cable tester that determines whether a fault in a cable exists by using echo cancellation values.

Abstract: Systems, methods, and other embodiments associated with echo cancellation are described. According to one embodiment, an apparatus includes a cable tester that determines whether a fault in a cable exists by using echo cancellation values.

Abstract: The invention provides a method for preventing TMR MRR drop of a slider, including: positioning a row bar constructed by sliders on a tray, each slider incorporating a TMR element; loading the tray into a processing chamber and evacuating the processing chamber to a predetermined pressure; forming a first etching means; exposing the sliders to the first etching means such that an oxide layer is formed on a surface of the TMR element; forming a second etching means; and exposing the sliders to the second etching means such that the oxide layer is etched to get a reduced thickness. The invention also discloses a method for manufacturing sliders.

Abstract: A method for forming micro-texture on ABS of a slider, includes steps of: positioning sliders arranged in arrays on a tray, each slider having a pole tip facing upward; loading the tray into a processing chamber, and evacuating the processing chamber to a preset pressure; introducing a mixture gas of inert gas and hydrocarbon gas into the processing chamber, and ionizing the mixture gas to produce ion beams; exposing the sliders to the ion beam for etching so as to form micro-texture with two-step structure on the ABS of the slider. The invention also discloses a method of manufacturing a slider having micro-texture.

Abstract: A thin-film forming method, which includes the steps of: (1) holding at least one object in a chamber; (2) depositing a film-forming material on the object; (3) etching the forming material while depositing is conducted. In the present invention, the depositing and etching are controlled to simultaneously conduct. The invention also disclose a system for performing the method.

Abstract: A method for preventing TMR (tunnel magneto-resistance) MRR (magneto-resistance resistance) drop of a slider, comprises steps of: positioning a row bar constructed by a plurality of slider structural bodies on a tray, each slider body having a pole tip with a TMR element; loading the tray into a processing chamber and evacuating the processing chamber to a preset pressure; introducing a processing gas containing oxygen gas into the processing chamber; and exposing the slider structural bodies to an etching means in the atmosphere of the processing gas to oxidize a surface of the TMR element to form an oxidation layer thereon. The invention also discloses a method for forming micro-texture on a surface of slider in same process, and a method for forming such a slider.

Abstract: The invention provides a method for preventing TMR MRR drop of a slider, including: positioning a row bar constructed by sliders on a tray, each slider incorporating a TMR element; loading the tray into a processing chamber and evacuating the processing chamber to a predetermined pressure; forming a first etching means; exposing the sliders to the first etching means such that an oxide layer is formed on a surface of the TMR element; forming a second etching means; and exposing the sliders to the second etching means such that the oxide layer is etched to get a reduced thickness. The invention also discloses a method for manufacturing sliders.

Abstract: A method for preventing TMR (tunnel magneto-resistance) MRR (magneto-resistance resistance) drop of a slider, comprises steps of: positioning a row bar constructed by a plurality of slider structural bodies on a tray, each slider body having a pole tip with a TMR element; loading the tray into a processing chamber and evacuating the processing chamber to a preset pressure; introducing a processing gas containing oxygen gas into the processing chamber; and exposing the slider structural bodies to an etching means in the atmosphere of the processing gas to oxidize a surface of the TMR element to form an oxidation layer thereon. The invention also discloses a method for forming micro-texture on a surface of slider in same process, and a method for forming such a slider.

Abstract: A method for forming micro-texture on ABS of a slider, includes steps of: positioning sliders arranged in arrays on a tray, each slider having a pole tip facing upward; loading the tray into a processing chamber, and evacuating the processing chamber to a preset pressure; introducing a mixture gas of inert gas and hydrocarbon gas into the processing chamber, and ionizing the mixture gas to produce ion beams; exposing the sliders to the ion beam for etching so as to form micro-texture with two-step structure on the ABS of the slider. The invention also discloses a method of manufacturing a slider having micro-texture.

Abstract: A Peripheral Component Interconnect (PCI) bridge between two buses prefetches read data into a cache. The number of cache lines to prefetch is predicted by a prefetch counter. One prefetch counter is kept for each type of memory-read command: basic memory-read (MR), memory-read-line (MRL) that reads a cache line, and memory-read-multiple (MRM) that reads multiple cache lines. For each type of read command, counters are kept of the number of completed commands, bus-disconnects (indicating under-fetch), and master-discard of data (indicating over-fetch). After a predetermined number of execution of each type of command, the command's prefetch counter is incremented if under-fetching occurred, or decremented if over-fetching occurred, as indicated by the disconnect and discard counters for that type of read command. The command's other counters are reset. Prefetching is optimized for each type of read command. MRM can prefetch more data than MRL or MR.

Abstract: A thin-film forming method, which includes the steps of: (1) holding at least one object in a chamber; (2) depositing a film-forming material on the object; (3) etching the forming material while depositing is conducted. In the present invention, the depositing and etching are controlled to simultaneously conduct. The invention also disclose a system for performing the method.

Abstract: An output buffer has a large pull-down driver transistor that draws a large current. The large driver transistor is pulsed off when a neighboring pin is switching, reducing noise and ground bounce. Pulse signals and a local enable are NOR'ed together to drive the gate of the large driver. The pulse signals are routed to many output buffers in a chip. Each data input is sent to a detector slice. The detector slice normally generates a pulse when the data input changes. These pulses from individual detector slices are combined into the pulse signals. The detector slice also receives a control signal from a control input to the chip. The control input enables a latch or flip-flop in the data path from the data input to the output buffer. When the latch is enabled, changes in the data input do not immediately affect the output buffer, but must wait for a clock edge. The control input that enables the latch also controls a mux in each detector slice.

Abstract: Ground and power-supply bounce are reduced for a CMOS output buffer. An n-channel driver transistor and a p-channel driver transistor are attached to the output pad. The gate of the n-channel driver transistor is driven by a pre-driver inverter. The pre-driver is a CMOS inverter except that the p-channel source is connected to power through a p-channel and an n-channel source-control transistor in parallel. The n-channel source-control transistor has its gate connected to power so that it remains on. The p-channel source-control transistor has its gate driven by feedback. The feedback is buffered from the output pad, or inverted from the gate of the driver transistor. When the output buffer switches, only the n-channel source-control transistor is initially on, so the current charging the driver gate is limited. The driver turns on slowly at first. Later, the feedback turns on the p-channel source-control transistor, increasing (doubling) the current to charge the driver gate.

Abstract: An isolating output buffer is operated by a low-voltage Vcc power supply, yet can be put in a high-impedance state. The output buffer does not draw significant current when its output is driven by an external driver to a voltage above Vcc. The over-voltage on the output pad is coupled to the n-well under p-channel transistors through a fixed-gate p-channel transistor. The over-voltage from the n-well is then coupled to a source node through another p-channel transistor. The source node is the source of a p-channel transistor that drives the gate of a p-channel driver transistor driving the output pad. The source node is normally driven to Vcc by another p-channel transistor. The p-channel transistor can be split into two driver transistors that are separately driven by two isolating inverters or gates. The isolating gates have p-channel transistors connected to the source node. Using split drivers can reduce noise and di/dt when the two driver transistor are enabled at slightly different times.

Abstract: An output buffer for a line driver uses transmission gates for active termination. A large p-channel driver is pulsed on during a low-to-high output transition, but this driver is turned off once the output voltage reaches a threshold. A feedback circuit includes a sensing inverter that has its input connected to the output node. The sensing inverter causes the gate of the p-channel driver to be driven high once the output swings past the threshold. A similar n-channel driver transistor is pulsed on during a low-going output transition but is disabled by a feedback circuit that senses the output voltage falling below a threshold. A pullup transmission gate is also connected between the output and the power supply, while a pulldown transmission gate is connected between the output and ground. Each transmission gate contains a p-channel and a n-channel transistor in parallel.