Patents by Inventor Baojiang ZHANG

Baojiang ZHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9691836
    Abstract: A pixel unit is used in an array substrate of a display device. In one embodiment, it comprises a gate line, a source-drain line and a thin-film transistor; and the gate line is in an overlapped structure comprising a first MoW layer, a Cu layer and a second MoW layer overlapped successively; and a gate of the thin-film transistor is formed of the first MoW layer. In another embodiment, the source-drain line is in a same overlapped structure; and a source and a drain of the thin-film transistor are formed of the first MoW layer. The first embodiment is achieved by means of a halftone process while the second embodiment is achieved by means of a lift off process. Diffusion of Cu in the gate layer or in the source-drain layer towards the oxide active layer is prevented.
    Type: Grant
    Filed: December 25, 2014
    Date of Patent: June 27, 2017
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Chunsheng Jiang, Jingfei Fang, Baojiang Zhang
  • Patent number: 9514676
    Abstract: Provided are a pixel circuit and driving method thereof and a display apparatus. The pixel circuit comprises a first transistor (T1), a second transistor (T2), a third transistor (T3), a storage capacitor (C1), a parasitic capacitor (C2) and a light emitting device (L).
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: December 6, 2016
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Zhongyuan Wu, Baojiang Zhang, Liye Duan
  • Publication number: 20160254339
    Abstract: A pixel unit is used in an array substrate of a display device. In one embodiment, it comprises a gate line, a source-drain line and a thin-film transistor; and the gate line is in an overlapped structure comprising a first MoW layer, a Cu layer and a second MoW layer overlapped successively; and a gate of the thin-film transistor is formed of the first MoW layer. In another embodiment, the source-drain line is in a same overlapped structure; and a source and a drain of the thin-film transistor are formed of the first MoW layer. The first embodiment is achieved by means of a halftone process while the second embodiment is achieved by means of a lift off process. Diffusion of Cu in the gate layer or in the source-drain layer towards the oxide active layer is prevented.
    Type: Application
    Filed: December 25, 2014
    Publication date: September 1, 2016
    Inventors: Chunsheng JIANG, Jingfei FANG, Baojiang ZHANG
  • Publication number: 20150339973
    Abstract: Provided are a pixel circuit and driving method thereof and a display apparatus. The pixel circuit comprises a first transistor (T1), a second transistor (T2), a third transistor (T3), a storage capacitor (C1), a parasitic capacitor (C2) and a light emitting device (L).
    Type: Application
    Filed: April 29, 2014
    Publication date: November 26, 2015
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhongyuan WU, Baojiang ZHANG, Liye DUAN