Patents by Inventor BAOJUN ZHAO

BAOJUN ZHAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10373826
    Abstract: A method is provided for fabricating a metal interconnect structure. The method includes forming a reticle having a metal line pattern region and at least a scattering bar by an optical proximity correction process; and providing a semiconductor substrate having a first dielectric layer and at least one conductive via. The method also includes aligning the reticle with the semiconductor substrate with the conductive via to align the scattering bar next to the conductive via; and forming metal line patterns on the first dielectric layer and a top surface of the conductive via to completely cover the conducive via.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: August 6, 2019
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: Baojun Zhao
  • Publication number: 20170309474
    Abstract: A method is provided for fabricating a metal interconnect structure. The method includes forming a reticle having a metal line pattern region and at least a scattering bar by an optical proximity correction process; and providing a semiconductor substrate having a first dielectric layer and at least one conductive via. The method also includes aligning the reticle with the semiconductor substrate with the conductive via to align the scattering bar next to the conductive via; and forming metal line patterns on the first dielectric layer and a top surface of the conductive via to completely cover the conducive via.
    Type: Application
    Filed: July 7, 2017
    Publication date: October 26, 2017
    Inventor: Baojun ZHAO
  • Patent number: 9735011
    Abstract: A method is provided for fabricating a metal interconnect structure. The method includes forming a reticle having a metal line pattern region and at least a scattering bar by an optical proximity correction process; and providing a semiconductor substrate having a first dielectric layer and at least one conductive via. The method also includes aligning the reticle with the semiconductor substrate with the conductive via to align the scattering bar next to the conductive via; and forming metal line patterns on the first dielectric layer and a top surface of the conductive via to completely cover the conducive via.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: August 15, 2017
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventor: Baojun Zhao
  • Publication number: 20150364415
    Abstract: A method is provided for fabricating a metal interconnect structure. The method includes forming a reticle having a metal line pattern region and at least a scattering bar by an optical proximity correction process; and providing a semiconductor substrate having a first dielectric layer and at least one conductive via. The method also includes aligning the reticle with the semiconductor substrate with the conductive via to align the scattering bar next to the conductive via; and forming metal line patterns on the first dielectric layer and a top surface of the conductive via to completely cover the conducive via.
    Type: Application
    Filed: May 27, 2015
    Publication date: December 17, 2015
    Inventor: BAOJUN ZHAO