Abstract: The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S1: using a p-light amplitude reflection coefficient rp and an s-light amplitude reflection coefficient rs of an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio ? of the ultra-thin film: ? = r p r s ; S2: performing a second-order Taylor expansion to ? = r p r s at df=0 while taking 2?df/? as a variable to obtain a second-order approximation form; S3: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S4: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.

Abstract: The disclosure relates to a method for measuring a dielectric tensor of a material. Firstly, a partial conversion matrix Tp and a transmission matrix Tt are determined by a predetermined initial value ?(E) of the dielectric tensor of the material to be measured, thereby obtaining a transfer matrix of an electromagnetic wave on a surface of the material to be measured by the partial conversion matrix Tp, the transmission matrix Tt, and an incident matrix Ti, a theoretical Mueller matrix spectrum MMCal(E) of the material to be measured is determined by the transfer matrix Tm. A fitting analysis is performed on the theoretical Mueller matrix spectrum MMCal(E) and a measured Mueller matrix spectrum MMExp(E) of the material to be measured to obtain the dielectric tensor of the material to be measured.

Abstract: The disclosure relates to a method for measuring a dielectric tensor of a material. Firstly, a partial conversion matrix Tp and a transmission matrix Tt are determined by a predetermined initial value ?(E) of the dielectric tensor of the material to be measured, thereby obtaining a transfer matrix of an electromagnetic wave on a surface of the material to be measured by the partial conversion matrix Tp, the transmission matrix Tt, and an incident matrix Ti. Then, a theoretical Mueller matrix spectrum MMCal(E) of the material to be measured is determined by the transfer matrix Tm. A fitting analysis is performed on the theoretical Mueller matrix spectrum MMCal(E) and a measured Mueller matrix spectrum MMExp(E) of the material to be measured to obtain the dielectric tensor of the material to be measured. The obtained result is comprehensive and reliable, which is suitable for solving dielectric tensors of various materials.

Abstract: A material optical transition analysis method and system are provided, the method includes: determining a dielectric function spectrum of a material to be analyzed, calculating a second derivative spectrum of the dielectric function spectrum related to the excitation light energy, and performing the CP fitting analysis on the second derivative spectrum to obtain a CP analysis result diagram of the material; drawing an energy band structure diagram and a PDOS diagram of the material, and drawing an energy difference diagram between CBs and VBs according to the energy band structure diagram of the material; determining spatial positions of CPs and the corresponding CBs and the VBs according to the CP analysis result diagram of the material and the energy difference diagram between the CBs and the VBs; and finally indicating the CBs and the VBs in the energy band structure diagram, and determining the particle types participating in formation of the CPs in the PDOS diagram to complete the material optical transi

Abstract: A material optical transition analysis method and system are provided, the method includes: determining a dielectric function spectrum of a material to be analyzed, calculating a second derivative spectrum of the dielectric function spectrum related to the excitation light energy, and performing the CP fitting analysis on the second derivative spectrum to obtain a CP analysis result diagram of the material; drawing an energy band structure diagram and a PDOS diagram of the material, and drawing an energy difference diagram between CBs and VBs according to the energy band structure diagram of the material; determining spatial positions of CPs and the corresponding CBs and the VBs according to the CP analysis result diagram of the material and the energy difference diagram between the CBs and the VBs; and finally indicating the CBs and the VBs in the energy band structure diagram, and determining the particle types participating in formation of the CPs in the PDOS diagram to complete the material optical transi

Abstract: The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S1: using a p-light amplitude reflection coefficient rp and an s-light amplitude reflection coefficient rs of an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio ? of the ultra-thin film: ? = r p r s ; S2: performing a second-order Taylor expansion to ? = r p r s at df=0 while taking 2?df/? as a variable to obtain a second-order approximation form; S3: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S4: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.