Abstract: A nitride-based bidirectional switching device is provided for working with a battery protection controller having a power input terminal, a discharge over-current protection (DO) terminal, a charge over-current protection (CO) terminal, a voltage monitoring (VM) terminal and a ground terminal. The nitride-based bidirectional switching device comprises a nitride-based bidirectional switching element and an adaption module configured for receiving a DO signal and a CO signal from the battery protection controller and generating a main control signal for controlling the bidirectional switching element. By implementing the adaption circuit, the nitride-based bidirectional switching element can work with conventional battery protection controller for battery charging and discharging management. Therefore, a nitride-based battery management system can be realized with higher operation frequency as well as a more compact size.

Abstract: A nitride-based bidirectional switching device is provided for working with a battery protection controller having a power input terminal, a discharge over-current protection (DO) terminal, a charge over-current protection (CO) terminal, a voltage monitoring (VM) terminal and a ground terminal. The nitride-based bidirectional switching device comprises a nitride-based bidirectional switching element and an adaption module configured for receiving a DO signal and a CO signal from the battery protection controller and generating a main control signal for controlling the bidirectional switching element. By implementing the adaption circuit, the nitride-based bidirectional switching element can work with conventional battery protection controller for battery charging and discharging management. Therefore, a nitride-based battery management system can be realized with higher operation frequency as well as a more compact size.

Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate electrode, a first electrode, a first via and a second via. The substrate has a first surface and a second surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap exceeding that of the first nitride semiconductor layer. The gate electrode and the first electrode are disposed on the second nitride semiconductor layer. The first via extends from the second surface and is electrically connected to the first electrode. The second via extends from the second surface. The depth of the first via is different from the depth of the second via.

Abstract: A nitride-based bidirectional switching device is provided for working with a battery protection controller having a power input terminal, a discharge over-current protection (DO) terminal, a charge over-current protection (CO) terminal, a voltage monitoring (VM) terminal and a ground terminal. The nitride-based bidirectional switching device comprises a nitride-based bidirectional switching element and an adaption module configured for receiving a DO signal and a CO signal from the battery protection controller and generating a main control signal for controlling the bidirectional switching element. By implementing the adaption circuit, the nitride-based bidirectional switching element can work with conventional battery protection controller for battery charging and discharging management. Therefore, a nitride-based battery management system can be realized with higher operation frequency as well as a more compact size.

Abstract: A nitride-based bidirectional switching device is provided for working with a battery protection controller having a power input terminal, a discharge over-current protection (DO) terminal, a charge over-current protection (CO) terminal, a voltage monitoring (VM) terminal and a ground terminal. The nitride-based bidirectional switching device comprises a nitride-based bidirectional switching element and an adaption module configured for receiving a DO signal and a CO signal from the battery protection controller and generating a main control signal for controlling the bidirectional switching element. By implementing the adaption circuit, the nitride-based bidirectional switching element can work with conventional battery protection controller for battery charging and discharging management. Therefore, a nitride-based battery management system can be realized with higher operation frequency as well as a more compact size.

Abstract: A flip-chip semiconductor package with improved heat dissipation capability and low package profile is provided. The package comprises a heat sink having a plurality of heat dissipation fins and a plurality of heat dissipation leads. The heat dissipation leads are connected to a plurality of thermally conductive vias of a substrate so as to provide thermal conductivity path from the heatsink to the substrate as well as support the heatsink to relieve compressive stress applied to a semiconductor die by the heatsink. The package further comprises an encapsulation layer configured to cover the heat dissipation leads of the heat sink and expose the heat dissipation fins of the heat sink.

Abstract: A nitride-based bidirectional switching device is provided for working with a battery protection controller having a power input terminal, a discharge over-current protection (DO) terminal, a charge over-current protection (CO) terminal, a voltage monitoring (VM) terminal and a ground terminal. The nitride-based bidirectional switching device comprises a nitride-based bidirectional switching element and an adaption module configured for receiving a DO signal and a CO signal from the battery protection controller and generating a main control signal for controlling the bidirectional switching element. By implementing the adaption circuit, the nitride-based bidirectional switching element can work with conventional battery protection controller for battery charging and discharging management. Therefore, a nitride-based battery management system can be realized with higher operation frequency as well as a more compact size.

Abstract: A nitride-based bidirectional switching device is provided for working with a battery protection controller having a power input terminal, a discharge over-current protection (DO) terminal, a charge over-current protection (CO) terminal, a voltage monitoring (VM) terminal and a ground terminal. The nitride-based bidirectional switching device comprises a nitride-based bidirectional switching element and an adaption module configured for receiving a DO signal and a CO signal from the battery protection controller and generating a main control signal for controlling the bidirectional switching element. By implementing the adaption circuit, the nitride-based bidirectional switching element can work with conventional battery protection controller for battery charging and discharging management. Therefore, a nitride-based battery management system can be realized with higher operation frequency as well as a more compact size.

Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate electrode, a first electrode, a first via and a second via. The substrate has a first surface and a second surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap exceeding that of the first nitride semiconductor layer. The gate electrode and the first electrode are disposed on the second nitride semiconductor layer. The first via extends from the second surface and is electrically connected to the first electrode. The second via extends from the second surface. The depth of the first via is different from the depth of the second via.

Abstract: A flip-chip semiconductor package with improved heat dissipation capability and low package profile is provided. The package comprises a heat sink having a plurality of heat dissipation fins and a plurality of heat dissipation leads. The heat dissipation leads are connected to a plurality of thermally conductive vias of a substrate so as to provide thermal conductivity path from the heatsink to the substrate as well as support the heatsink to relieve compressive stress applied to a semiconductor die by the heatsink. The package further comprises an encapsulation layer configured to cover the heat dissipation leads of the heat sink and expose the heat dissipation fins of the heat sink.

Abstract: The invention provides a protein-free solution for cell cryopreservation, which comprises 1-23 w/v % of cell membrane protectant, 1.0-16 w/v % of permeable intracellular protectant, 3.0-28 w/v % of cell sedimentation stabilizer, and the balance of pH buffer solution. The cell cryopreservation solution of the invention consists of chemical substances only, without any protein content. The components are stable and controllable. The cell cryopreservation solution has long shelf life, high stability between different batches and good protection of cells, and has no effect on the characteristics, normal growth and differentiation of cells; besides, the recovery rate of the cells cryopreserved by the cell cryopreservation solution is high.

Abstract: The invention provides a solution for non-programmed cell cryopreservation, which comprises 1.0-28 w/v % of cell membrane protectant, 1.0-18 w/v % of permeable intracellular protectant, 3.0-28 w/v % of cell sedimentation stabilizer, and the balance of solvent. The cell cryopreservation solution provided by the invention is good for protecting cells. After the cryopreservation solution is added to cells, the cells can be cryopreserved in a refrigerator of ?80 DEG C. directly without complicated programmed cryopreservation, thus, the time for cell cryopreservation is shortened greatly and the efficiency of cryopreservation is improved. Therefore, the cryopreservation solution is suitable for cryopreserving a large number of cells. The recovery rate of the cells cryopreserved is high, the growth and differentiation of the recovered cells is normal. The components of the cryopreservation solution are stable, thus the cryopreservation solution can be preserved with good property for a long time.