Patents by Inventor Baomin Xu
Baomin Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9539736Abstract: A mechanical method for producing micro-scale and nano-scale textures that facilitates, for example, the cost-effective production of nanostructures on large-scale substrates, e.g., during the large-scale production of thin-film solar cells. A “scratcher” (multi-pointed abrasion mechanism) is maintained in a precise position relative to a target substrate such that micron-level features (protrusions) extending from the scratcher's base structure are precisely positioned to contact a surface material layer of the target substrate with a predetermined amount of force, and then moved relative to the substrate (e.g., by way of a conveying mechanism) while maintaining the pressing force such that the micron-level features define elongated parallel nano-scale grooves and/or form nano-scale ridges in the surface material layer (i.e., by mechanically displacing) portions of the surface material layer to form the nano-scale grooves/ridges).Type: GrantFiled: August 7, 2012Date of Patent: January 10, 2017Assignee: Palo Alto Research Center IncorporatedInventors: David Eric Schwartz, Matthew D. Eisaman, Sourobh Raychaudhuri, Philipp H. Schmaelzle, Robert A. Street, Sean Garner, Baomin Xu, Jiye Lee
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Patent number: 9150966Abstract: Inline methods for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell includes a semiconductor substrate having a passivation layer thereon, includes providing a plurality of contact openings through the passivation layer to the semiconductor substrate, selectively plating a contact metal into the plurality of contact openings by printing electroless plating solution into the plurality of contact openings to deposit the contact metal, depositing a metal containing material on the deposited contact metal, and firing the deposited contact metal and the deposited metal containing material. The metal containing material may include a paste containing a silver or silver alloy along with a glass frit and is substantially free to completely free of lead. The methods may also use light activation of the passivation layer or use seed layers to assist in the plating.Type: GrantFiled: November 14, 2008Date of Patent: October 6, 2015Assignee: Palo Alto Research Center IncorporatedInventors: Baomin Xu, Karl A. Littau, Scott A. Elrod
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Patent number: 9054237Abstract: Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g.Type: GrantFiled: November 24, 2010Date of Patent: June 9, 2015Assignee: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, Baomin Xu
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Patent number: 8962424Abstract: A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric passivation layer over the substrate's upper surface, utilizing laser ablation to form contact openings through the dielectric layer that expose corresponding contact/protection structures, and then forming metal gridlines on the upper surface of the dielectric layer that are electrically connected to the contact structures by way of metal via structures extending through associated contact openings. The contact/protection structures serve both as protection against substrate damage during the contact opening formation process (i.e., to prevent damage of the p+ emitter layer caused by the required high energy laser pulses), and also serve as optional silicide sources that facilitate optimal contact between the metal gridlines and the p+ emitter layer.Type: GrantFiled: March 3, 2011Date of Patent: February 24, 2015Assignee: Palo Alto Research Center IncorporatedInventor: Baomin Xu
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Patent number: 8846431Abstract: A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric passivation layer over the substrate's upper surface, utilizing laser ablation to form contact openings through the dielectric layer that expose corresponding contact/protection structures, and then forming metal gridlines on the upper surface of the dielectric layer that are electrically connected to the contact structures by way of metal via structures extending through associated contact openings. The contact/protection structures serve both as protection against substrate damage during the contact opening formation process (i.e., to prevent damage of the p+ emitter layer caused by the required high energy laser pulses), and also serve as optional silicide sources that facilitate optimal contact between the metal gridlines and the p+ emitter layer.Type: GrantFiled: May 6, 2014Date of Patent: September 30, 2014Assignee: Palo Alto Research Center IncorporatedInventor: Baomin Xu
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Publication number: 20140238484Abstract: A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric passivation layer over the substrate's upper surface, utilizing laser ablation to form contact openings through the dielectric layer that expose corresponding contact/protection structures, and then forming metal gridlines on the upper surface of the dielectric layer that are electrically connected to the contact structures by way of metal via structures extending through associated contact openings. The contact/protection structures serve both as protection against substrate damage during the contact opening formation process (i.e., to prevent damage of the p+ emitter layer caused by the required high energy laser pulses), and also serve as optional suicide sources that facilitate optimal contact between the metal gridlines and the p+ emitter layer.Type: ApplicationFiled: May 6, 2014Publication date: August 28, 2014Applicant: Palo Alto Research Center IncorporatedInventor: Baomin Xu
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Publication number: 20140041504Abstract: A mechanical method for producing micro-scale and nano-scale textures that facilitates, for example, the cost-effective production of nanostructures on large-scale substrates, e.g., during the large-scale production of thin-film solar cells. A “scratcher” (multi-pointed abrasion mechanism) is maintained in a precise position relative to a target substrate such that micron-level features (protrusions) extending from the scratcher's base structure are precisely positioned to contact a surface material layer of the target substrate with a predetermined amount of force, and then moved relative to the substrate (e.g., by way of a conveying mechanism) while maintaining the pressing force such that the micron-level features define elongated parallel nano-scale grooves and/or form nano-scale ridges in the surface material layer (i.e., by mechanically displacing) portions of the surface material layer to form the nano-scale grooves/ridges).Type: ApplicationFiled: August 7, 2012Publication date: February 13, 2014Applicant: Palo Alto Research Center IncorporatedInventors: David Eric Schwartz, Matthew D. Eisaman, Sourobh Raychaudhuri, Philipp H. Schmaelzle, Robert A. Street, Sean Garner, Baomin Xu, Jiye Lee
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Patent number: 8426724Abstract: Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g.Type: GrantFiled: November 24, 2010Date of Patent: April 23, 2013Assignee: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, Baomin Xu
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Patent number: 8359748Abstract: A method of forming a fluid ejector includes forming a recess well into a silicon wafer on a first side of the silicon wafer, and filling the recess well with a sacrificial material. A thin layer structure is deposited onto the first side of a silicon wafer covering the filled recess well. Then a thin film piezoelectric is bonded or deposited to the thin layer structure, and a hole is formed in the thin layer structure exposing at least a portion of the sacrificial material. The sacrificial material is removed from the recess well, wherein the hole in the thin layer in the recess well with the sacrificial material removed, form a fluid inlet. An opening area in the silicon wafer is formed on a second side of the silicon wafer. Then a nozzle plate is formed having a recess portion and an aperture within the recess portion. The nozzle plate is attached to the second side of the silicon wafer, with the recess portion positioned within the open area.Type: GrantFiled: November 19, 2008Date of Patent: January 29, 2013Assignee: Palo Alto Research Center IncorporatedInventors: Baomin Xu, Steven A. Buhler, Stephen D. White, Scott Jong Ho Limb
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Publication number: 20120222735Abstract: A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric passivation layer over the substrate's upper surface, utilizing laser ablation to form contact openings through the dielectric layer that expose corresponding contact/protection structures, and then forming metal gridlines on the upper surface of the dielectric layer that are electrically connected to the contact structures by way of metal via structures extending through associated contact openings. The contact/protection structures serve both as protection against substrate damage during the contact opening formation process (i.e., to prevent damage of the p+ emitter layer caused by the required high energy laser pulses), and also serve as optional silicide sources that facilitate optimal contact between the metal gridlines and the p+ emitter layer.Type: ApplicationFiled: March 3, 2011Publication date: September 6, 2012Applicant: Palo Alto Research Center IncorporatedInventor: Baomin Xu
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Patent number: 8050601Abstract: Exemplary embodiments provide a roll member that includes one or more piezoelectric tape and methods for making and using the roll member. The piezoelectric tape can be flexible and include a plurality of piezoelectric elements configured in a manner that the piezoelectric elements can be addressed individually or as groups with various numbers of elements in each group. In an exemplary embodiment, the disclosed roll member can be used as a donor roll for a development system of an electrophotographic printing machine to create controlled and desired toner powder cloud for high quality image development, such as an image on image development in a hybrid scavengeless development (HSD) system.Type: GrantFiled: January 24, 2008Date of Patent: November 1, 2011Assignees: Xerox Corporation, Palo Alto Research Center IncorporatedInventors: Pinyen Lin, Baomin Xu, Lalit K. Mestha
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Patent number: 8023866Abstract: A marking apparatus including a traveling wave grid toner transport circuit structure for transporting powdered toner along a transport surface, and electromechanical elements for selectively enabling toner patches to be projected to an output medium by a projecting electric field.Type: GrantFiled: July 31, 2008Date of Patent: September 20, 2011Assignee: Xerox CorporationInventors: Meng H Lean, Shu Chang, Baomin Xu, Karl A Littau, David G Duff
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Patent number: 8001666Abstract: A method is provided that includes providing a mold on a temporary substrate, e.g., a sapphire substrate. Next, a material such as PZT paste is deposited into the mold. Then, the mold is removed to obtain elements formed by the mold. The formed elements will then be sintered. After sintering, electrode deposition is optionally performed. The sintered elements are then bonded to a final target substrate and released from the temporary substrate through laser liftoff. Further, electrodes may also be optionally deposited at this point.Type: GrantFiled: June 16, 2008Date of Patent: August 23, 2011Assignee: Palo Alto Research Center IncorporatedInventors: Baomin Xu, Stephen D. White, Steven A. Buhler
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Patent number: 7999175Abstract: Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g.Type: GrantFiled: September 9, 2008Date of Patent: August 16, 2011Assignee: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, Baomin Xu
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Patent number: 7944115Abstract: A system for transporting particles includes a substrate and a plurality of spaced electrically conductive electrodes carried by the substrate. Further included is a carrier medium adapted for the retention and migration of particles disposed therein, wherein the carrier medium is in operational contact with the electrodes, and a vibration generator is positioned in relation to the substrate to impart vibrations into the carrier medium. In an alternative embodiment, the vibration generator is configured to generate an acoustic traveling wave, which includes a vibration component and a motivation component.Type: GrantFiled: May 11, 2010Date of Patent: May 17, 2011Assignee: Palo Alto Research Center IncorporatedInventors: Baomin Xu, Meng H. Lean, Scott Jong Ho Limb
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Patent number: 7929887Abstract: Exemplary embodiments provide a direct imaging system and methods for direct marking an image using the system. The disclosed direct imaging system can eliminate the creation of a latent image and can be used in an electrophotographic machine and related processes. Specifically, the direct imaging system can include a direct marking substrate (e.g., a printing substrate) and a development belt member closely spaced from the direct marking substrate. In one embodiment, the development belt member can include a plurality of actuator cells with each actuator cell controllably addressable to eject one or more toner particles adhered thereto. The ejected toner particles can transit the space between the donor belt member and the direct marking substrate, and directly marking onto the direct marking substrate forming an image.Type: GrantFiled: January 30, 2009Date of Patent: April 19, 2011Assignees: Xerox Corporation, Palo Alto Research Center IncorporatedInventors: Lalit K. Mestha, Pinyen Lin, Baomin Xu, John G. Shaw, Palghat Ramesh, Peter Michael Gulvin
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Publication number: 20110070676Abstract: Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g.Type: ApplicationFiled: November 24, 2010Publication date: March 24, 2011Applicant: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, Baomin Xu
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Publication number: 20110070681Abstract: Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g.Type: ApplicationFiled: November 24, 2010Publication date: March 24, 2011Applicant: Palo Alto Research Center IncorporatedInventors: Kenta Nakayashiki, Baomin Xu
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Patent number: 7905580Abstract: A fluid ejector including a silicon wafer having a first side and a second side. A multi-layer monolithic structure is formed on the first side of the silicon wafer. The multi-layer monolithic structure includes a first structure layer formed on the first side of the silicon wafer, and the first structure layer has an aperture. A second structure layer has a horizontal portion and closed, filled trenches or vertical sidewalls. The first structure layer, horizontal portion and the closed, filled trenches or vertical sidewalls of the second structure layer define a fluid cavity. An actuator is associated with the horizontal portion of the second structure layer, and an etched portion of the silicon wafer defines an open area which exposes the aperture in the first structure layer.Type: GrantFiled: November 19, 2008Date of Patent: March 15, 2011Assignee: Palo Alto Research Center IncorporatedInventors: Baomin Xu, Steven A. Buhler, Stephen D. White, Scott Jong Ho Limb
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Patent number: 7869748Abstract: Exemplary embodiments provide a direct imaging system and methods for direct marking an image using the system. The disclosed direct imaging system can eliminate the use of at least one of a charge, and/or exposure subsystems in an electrostatographic machine and related processes. Specifically, the direct imaging system can include a direct marking substrate (e.g., a printing substrate) and a development roll member closely spaced from the direct marking substrate. In one embodiment, the development roll member can include a plurality of actuator cells with each actuator cell controllably addressable to eject one or more toner particles adhered thereto. The ejected toner particles can transit the space between the donor roll member and the direct marking substrate, and thereby marking onto the direct marking substrate forming an image.Type: GrantFiled: September 10, 2008Date of Patent: January 11, 2011Assignees: Xerox Corporation, Palo Alto Research Center, IncorporatedInventors: Lalit Keshav Mestha, John G. Shaw, Palghat Ramesh, Allen Ted Retzlaff, Jr., Peter Michael Gulvin, Pinyen Lin, Baomin Xu