Patents by Inventor Baoqiang Niu

Baoqiang Niu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including a lateral insulator
    Patent number: 11322594
    Abstract: A semiconductor device, and methods of forming the same. In one example, the semiconductor device includes a trench in a substrate having a top surface, and a shield within the trench. The semiconductor device also includes a shield liner between a sidewall of the trench and the shield, and a lateral insulator over the shield contacting the shield liner. The semiconductor device also includes a gate dielectric layer on an exposed sidewall of the trench between the lateral insulator and the top surface. The lateral insulator may have a minimum thickness at least two times thicker than a maximum thickness of the gate dielectric layer.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: May 3, 2022
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Fei Ma, Ya ping Chen, Yunlong Liu, Hong Yang, Shengpin Yang, Baoqiang Niu, Rui Liu, Zhi Peng Feng, Seetharaman Sridhar, Sunglyong Kim
  • SEMICONDUCTOR DEVICE INCLUDING A LATERAL INSULATOR
    Publication number: 20220052165
    Abstract: A semiconductor device, and methods of forming the same. In one example, the semiconductor device includes a trench in a substrate having a top surface, and a shield within the trench. The semiconductor device also includes a shield liner between a sidewall of the trench and the shield, and a lateral insulator over the shield contacting the shield liner. The semiconductor device also includes a gate dielectric layer on an exposed sidewall of the trench between the lateral insulator and the top surface. The lateral insulator may have a minimum thickness at least two times thicker than a maximum thickness of the gate dielectric layer.
    Type: Application
    Filed: December 28, 2020
    Publication date: February 17, 2022
    Inventors: Fei Ma, Ya ping Chen, Yunlong Liu, Hong Yang, Shengpin Yang, Baoqiang Niu, Rui Liu, Zhi Peng Feng, Seetharaman Sridhar, Sunglyong Kim