Abstract: Methods to reduce the write time for forming mask patterns having angled and non-angled features using electron beam lithography are disclosed. In one exemplary embodiment, non-angled features of the mask pattern are formed by exposure to an electron beam. The orientation of the substrate and a path of the generally rectangular-shaped shot from the electron beam may be relatively altered such that the substrate is exposed to the electron beam to form the angled features as if they were non-angled features. In another exemplary embodiment, the electron beam lithography system determines whether it is necessary to relatively alter the orientation of the substrate and a path of the generally rectangular-shaped shot from the electron beam to form the angled features based on the number of angled features and the time required for relatively altering the orientation. Electron beam lithography systems employing a rotatable stage, rotatable apertures, or both are disclosed.

Abstract: Methods of fabricating a photomask, methods of treating a chemically amplified resist-coated photomask blank, a photomask blank resulting from the methods, and systems for fabricating a photomask are provided. The method is useful for recovering the exposure sensitivity of a chemically amplified resist disposed on a photomask blank from a post-coat delay effect.

Abstract: Methods of fabricating a photomask, methods of treating a chemically amplified resist-coated photomask blank, a photomask blank resulting from the methods, and systems for fabricating a photomask are provided. The method is useful for recovering the exposure sensitivity of a chemically amplified resist disposed on a photomask blank from a post-coat delay effect.

Abstract: Methods of fabricating a photomask, methods of treating a chemically amplified resist-coated photomask blank, a photomask blank resulting from the methods, and systems for fabricating a photomask are provided. The method is useful for recovering the exposure sensitivity of a chemically amplified resist disposed on a photomask blank from a post-coat delay effect.

Abstract: The invention includes reticle constructions and methods of forming reticle constructions. In a particular aspect, a method of forming a reticle includes provision of a reticle substrate having a defined main-field region and a defined boundary region. The substrate has a relatively transparent base and a relatively opaque material over the base. A thickness of the relatively opaque material of the main-field region is reduced relative to a thickness of the relatively opaque material of the boundary region. A reticle construction of the present invention can comprise a relatively transparent base, and a relatively opaque material over the base. The construction can have a defined main-field region and a defined boundary region, and the relatively opaque material of the main-field region can have a reduced thickness relative to the relatively opaque material of the boundary region.

Abstract: The invention includes methods of forming reticles. A mask blank is provided having a plurality of regions defined within a main-field area. Exposure to an electron beam is initiated at an initial locus within an interior region of the main-field. The invention includes a method of correcting feature dimension variation. A mask blank is patterned utilizing a first dose correction component and feature dimension variance is determined. The variance is utilized to determine a second correction component which is added to the first dose correction component to create an enhanced dose correction. The invention includes a recording medium and a system comprising the recording medium. The medium contains programming configured to cause processing circuitry to: access data defining a design pattern; obtain error data pertaining to feature dimension variation; generate correction data; produce data defining a corrective pattern; and apply the corrective pattern during an exposure event.

Abstract: The invention includes reticle constructions and methods of forming reticle constructions. In a particular aspect, a method of forming a reticle includes provision of a reticle substrate having a defined main-field region and a defined boundary region. The substrate has a relatively transparent base and a relatively opaque material over the base. A thickness of the relatively opaque material of the main-field region is reduced relative to a thickness of the relatively opaque material of the boundary region. A reticle construction of the present invention can comprise a relatively transparent base, and a relatively opaque material over the base. The construction can have a defined main-field region and a defined boundary region, and the relatively opaque material of the main-field region can have a reduced thickness relative to the relatively opaque material of the boundary region.

Abstract: Methods to reduce the write time for forming mask patterns having angled and non-angled features using electron beam lithography are disclosed. In one exemplary embodiment, non-angled features of the mask pattern are formed by exposure to an electron beam. The orientation of the substrate and a path of the generally rectangular-shaped shot from the electron beam may be relatively altered such that the substrate is exposed to the electron beam to form the angled features as if they were non-angled features. In another exemplary embodiment, the electron beam lithography system determines whether it is necessary to relatively alter the orientation of the substrate and a path of the generally rectangular-shaped shot from the electron beam to form the angled features based on the number of angled features and the time required for relatively altering the orientation. Electron beam lithography systems employing a rotatable stage, rotatable apertures, or both are also disclosed.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.

Abstract: Methods of fabricating a photomask, methods of treating a chemically amplified resist-coated photomask blank, a photomask blank resulting from the methods, and systems for fabricating a photomask are provided. The method is useful for recovering the exposure sensitivity of a chemically amplified resist disposed on a photomask blank from a post-coat delay effect.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.

Abstract: Methods of fabricating a photomask, methods of treating a chemically amplified resist-coated photomask blank, a photomask blank resulting from the methods, and systems for fabricating a photomask are provided. The method is useful for recovering the exposure sensitivity of a chemically amplified resist disposed on a photomask blank from a post-coat delay effect.

Abstract: The invention includes a method of patterning a mass of material. A beam of activated particles is formed proximate the mass of material, and a pattern of deposit is formed on a surface of the mass with the beam of activated particles. The mass is then etched while using the deposit as an etch mask. The mass of material can be associated with a radiation-patterning tool, such as, for example, a photomask, or can be associated with a semiconductor substrate. The invention also encompasses a photomask construction comprising a substrate, and a patterned material over the substrate. The patterned material covers some regions of the substrate, and leaves other regions not covered. A carbon-containing layer is on the patterned material, but not over the regions of the substrate that are not covered by the patterned material.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.

Abstract: A light shielding layer is formed over a light transmissive substrate. The light shielding layer is patterned to have at least a portion having a first series of openings which alternate with a second series of openings. One of the first series of openings or the second series of openings is effectively masked while leaving the other of the first series of openings or the second series of openings effectively unmasked. While the one openings are effectively masked and the other openings are effectively unmasked, a species is ion implanted into the light transmissive substrate through the other openings. The implanted species effectively increases a wet etch rate of the light transmissive substrate in a wet etch chemistry compared to light transmissive substrate which is not effectively implanted with the species.

Abstract: A method and apparatus for reducing the charging effect of electron beam devices on non-conducting samples includes introducing a water containing gas on the sample surface. Because the water containing gas is conductive, the charge is dissipated. The water containing gas may be introduced by a nozzle and the pressure may be adjusted to provide an amount of water containing gas sufficient to dissipate the charging effect produced by the electron beam. In a preferred embodiment, the water containing gas is water vapor. This technique is especially useful for inspection of quartz samples such as quartz photomasks with scanning electron microscopes because water vapor exhibits good adhesion to quartz surfaces, which helps to distribute and dissipate the charge quickly. A method for reducing carbon deposition caused by an electron beam device also involves introducing a water containing gas on the sample surface. This method is effective for both conductive and non-conductive samples.

Abstract: The invention includes a method of patterning a mass of material. A beam of activated particles is formed proximate the mass of material, and a pattern of deposit is formed on a surface of the mass with the beam of activated particles. The mass is then etched while using the deposit as an etch mask. The mass of material can be associated with a radiation-patterning tool, such as, for example, a photomask, or can be associated with a semiconductor substrate. The invention also encompasses a photomask construction comprising a substrate, and a patterned material over the substrate. The patterned material covers some regions of the substrate, and leaves other regions not covered. A carbon-containing layer is on the patterned material, but not over the regions of the substrate that are not covered by the patterned material.

Abstract: A method of repairing defects on a MoSi phase shifting template such as a mask or reticle that includes the steps of directing an ultraviolet light source over region of the template that includes an opaque defect. Clear defects caused by the removal of the opaque defect in the template are then repaired by a focused ion beam (FIB). The template may be exposed to a strongly basic solution to remove ion stains produced by the FIB. According to this method, the defect is removed with high edge placement accuracy and high quality of geometry reconstruction.

Abstract: A method and apparatus for calibrating the coordinate systems of photomask processing machines improves processing efficiency and the quality of resulting photomasks. A test pattern is printed on an unproductive area of the photomask. The test pattern is used to calibrate the coordinate system of each processing machine on which the photomask is mounted. Using the test pattern as a common reference point enables points located using one processing machine to be quickly and accurately found on a second processing machine. The test pattern is also used as a reference for other metrology measurements.

Abstract: A method of repairing defects on a MoSi phase shifting template such as a mask or reticle that includes the steps of directing an ultraviolet light source over region of the template that includes an opaque defect. Clear defects caused by the removal of the opaque defect in the template are then repaired by a focused ion beam (FIB). The template may be exposed to a strongly basic solution to remove ion stains produced by the FIB. According to this method, the defect is removed with high edge placement accuracy and high quality of geometry reconstruction.