Patents by Inventor Baowei Qiao

Baowei Qiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory cell having a floating gate and a coupling gate with improved coupling ratio therebetween
    Patent number: 9379255
    Abstract: A non-volatile memory cell having a split gate, wherein the floating gate and the coupling/control gate have complimentary non-planar shapes. The shape may be a step shape. An array of such cells and a method of manufacturing the cells are also disclosed.
    Type: Grant
    Filed: July 16, 2012
    Date of Patent: June 28, 2016
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Chunming Wang, Baowei Qiao, Zufa Zhang, Yi Zhang, Shiuh Luen Wang, Wen-Juei Lu
  • Method of making a split gate non-volatile floating gate memory cell having a separate erase gate, and a memory cell made thereby
    Patent number: 9190532
    Abstract: A non-volatile memory cell has a single crystalline substrate of a first conductivity type with a top surface. A first region of a second conductivity type is in the substrate along the top surface. A second region of the second conductivity type is in the substrate along the top surface, spaced apart from the first region. A channel region is the first region and the second region. A word line gate is positioned over a first portion of the channel region, immediately adjacent to the first region. The word line gate is spaced apart from the channel region by a first insulating layer. A floating gate is positioned over another portion of the channel region. The floating gate has a lower surface separated from the channel region by a second insulating layer, and an upper surface opposite the lower surface. The floating gate has a first side wall adjacent to but separated from the word line gate; and a second side wall opposite the first side wall.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: November 17, 2015
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Chunming Wang, Baowei Qiao, Zufa Zhang, Yi Zhang, Shiuh Luen Wang, Wen-Juei Lu
  • A METHOD OF MAKING A SPLIT GATE NON-VOLATILE FLOATING GATE MEMORY CELL HAVING A SEPARATE ERASE GATE, AND A MEMORY CELL MADE THEREBY
    Publication number: 20140217489
    Abstract: A non-volatile memory cell has a single crystalline substrate of a first conductivity type with a top surface. A first region of a second conductivity type is in the substrate along the top surface. A second region of the second conductivity type is in the substrate along the top surface, spaced apart from the first region. A channel region is the first region and the second region. A word line gate is positioned over a first portion of the channel region, immediately adjacent to the first region. The word line gate is spaced apart from the channel region by a first insulating layer. A floating gate is positioned over another portion of the channel region. The floating gate has a lower surface separated from the channel region by a second insulating layer, and an upper surface opposite the lower surface. The floating gate has a first side wall adjacent to but separated from the word line gate; and a second side wall opposite the first side wall.
    Type: Application
    Filed: August 8, 2012
    Publication date: August 7, 2014
    Applicant: SILICON STORAGE TECHNOLOGY. Inc.
    Inventors: Chunming Wang, Baowei Qiao, Zufa Zhang, Yi Zhang, Shiuh luen Wang, Wen-Juei Lu
  • Non-volatile Memory Cell Having A Floating Gate And A Coupling Gate With Improved Coupling Ratio Therebetween
    Publication number: 20140203343
    Abstract: A non-volatile memory cell having a split gate, wherein the floating gate and the coupling/control gate have complimentary non-planar shapes. The shape may be a step shape. An array of such cells and a method of manufacturing the cells are also disclosed.
    Type: Application
    Filed: July 16, 2012
    Publication date: July 24, 2014
    Applicant: Silicon Storage Technology, Inc.
    Inventors: Chunming Wang, Baowei Qiao, Zufa Zhang, Yi Zhang, Shiuh Luen Wang, Wen-Juei Lu