Abstract: A device for depositing a thick metal nitride on a sample by supercritical fluids includes a first enclosure forming a first closed volume; a second enclosure placed in the first enclosure and delimited by internal walls transparent to electromagnetic radiation forming a second closed volume intended to comprise a fluid under supercritical conditions; a heat transfer dielectric fluid circulating in the first volume around the second enclosure; a sample holder present in the second volume; an induction heating device surrounding the second enclosure; inlets for introducing a fluid and at least one precursor material into the second enclosure; and an outlet to purge the second volume.

Abstract: An optical element includes a transparent substrate and an intermediate coating extending over at least one main surface of the substrate. The intermediate coating has a plurality of dense thin layers which alternate in having a first index refractive index and a second refractive index, the first refractive index being greater than the second refractive index. The optical element further includes at least one porous layer extending over the intermediate coating, opposite the substrate. The porous layer has a third refractive index that is lower than the first and second refractive indices.

Abstract: A device for depositing a thick metal nitride on a sample by supercritical fluids includes a first enclosure forming a first closed volume; a second enclosure placed in the first enclosure and delimited by internal walls transparent to electromagnetic radiation forming a second closed volume intended to include fluid under supercritical conditions; a heat transfer dielectric fluid circulating in the first volume around the second enclosure; a sample holder present in the second volume; an induction heating device surrounding the second enclosure; inlets for introducing a fluid and at least one precursor material into the second enclosure, and an outlet to purge the second volume.

Abstract: A process for coating a substrate with tantalum nitride by the high-power impulse magnetron sputtering technique, wherein a tantalum target is used and wherein the coating of the substrate is carried out in an atmosphere containing nitrogen, the bias of the target being controlled during the coating by imposing on it the superposition of a continuous bias at a potential between ?300 V and ?100 V and of a pulsed bias whose pulses have a potential between ?1200 V and ?400 V.