Abstract: Some embodiments of the invention provide a mouthpiece for use with an electronic analyzer for breath analyte detection in an individual. The mouthpiece includes a biosensor and a hydration system. The biosensor includes a chemically active area where a chemical reaction takes place and the hydration system delivers a liquid to the chemically active area of the biosensor to at least one of enhance, enable, and facilitate the chemical reaction. The mouthpiece further includes hardware to transmit breath analyte data.

Abstract: Some embodiments of the invention provide a mouthpiece for use with an electronic analyzer for breath analyte detection in an individual. The mouthpiece includes a biosensor and a hydration system. The biosensor includes a chemically active area where a chemical reaction takes place and the hydration system delivers a liquid to the chemically active area of the biosensor to at least one of enhance, enable, and facilitate the chemical reaction. The mouthpiece further includes hardware to transmit breath analyte data.

Abstract: A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer of improved epitaxial quality deposited on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 105, nitrogen source material partial pressure in a range of from about 1 to about 103 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 102 microns per hour.

Abstract: Some embodiments of the invention provide a mouthpiece for use with an electronic analyzer for breath analyte detection in an individual. The mouthpiece includes a biosensor and a hydration system. The biosensor includes a chemically active area where a chemical reaction takes place and the hydration system delivers a liquid to the chemically active area of the biosensor to at least one of enhance, enable, and facilitate the chemical reaction. The mouthpiece further includes hardware to transmit breath analyte data.

Abstract: Some embodiments of the invention provide a mouthpiece for use with an electronic analyzer for breath analyte detection in an individual. The mouthpiece includes a biosensor and a hydration system. The biosensor includes a chemically active area where a chemical reaction takes place and the hydration system delivers a liquid to the chemically active area of the biosensor to at least one of enhance, enable, and facilitate the chemical reaction. The mouthpiece further includes hardware to transmit breath analyte data.

Abstract: Some embodiments of the invention provide a biosensor system with a multifunctional portable electronic device for use by an individual. The biosensor system includes a breath delivery system with a breath sensor capable of detecting an analyte in the individual's breath. The system also includes a portable electronic device capable of receiving breath analyte data from the breath sensor and blood glucose data or other types of personal health data. The portable electronic device is capable of storing, analyzing, and/or transmitting the breath analyte data and the blood glucose data or the other types of personal health data.

Abstract: InP heterojunction bipolar transistors having a base layer of InGaAs which are compositionally graded to engineer the bandgap of the base layer to be larger at the emitter/base junction than at the collector/base junction. The graded bandgap can increase DC current gain and speed of the device. A metalorganic chemical vapor deposition method of preparing InP heterojunction bipolar transistors having a base layer with a relatively high concentration of carbon dopant. The high carbon dopant concentration lowers the base sheet resistivity and turn-on voltage of the device.

Abstract: A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer of improved epitaxial quality deposited on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 105, nitrogen source material partial pressure in a range of from about 1 to about 103 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 102 microns per hour.

Abstract: A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1{overscore (1)}00> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.

Abstract: InP heterojunction bipolar transistors having a base layer of InGaAs which are compositionally graded to engineer the bandgap of the base layer to be larger at the emitter/base junction than at the collector/base junction. The graded bandgap can increase DC current gain and speed of the device. A metalorganic chemical vapor deposition method of preparing InP heterojunction bipolar transistors having a base layer with a relatively high concentration of carbon dopant. The high carbon dopant concentration lowers the base sheet resistivity and turn-on voltage of the device.

Abstract: A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 105, nitrogen source material partial pressure in a range of from about 1 to about 103 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

Abstract: A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1{overscore (1)}00> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.

Abstract: A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1{overscore (1)}00> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.