Abstract: The present disclosure relates to a flue gas treatment system (e.g. a multi-pollutant flue gas treatment system) for removal of greenhouse gases such as SO2, NO, NO2, H2S, HCl, water and CO2 as well as heavy metals (e.g. mercury, arsenic, bismuth, cadmium, lead and/or selenium) from the flue gases of fossil-fueled utility and industrial plants by reacting the raw flue gas, firstly, with chlorine in a gas-phase oxidation reaction and recovering the resulting products as marketable products, and then, secondly, treating the cleaned gas, which includes CO2, with a Sabatier reaction to produce a hydrocarbon fuel (e.g. methane). The system also includes an electrolytic unit for electrolyzing HCl to produce hydrogen gas for the Sabatier reaction as well as chlorine gas, which may then be recycled into the reactor.

Abstract: The present disclosure relates to a flue gas treatment system (e.g. a multi-pollutant flue gas treatment system) for removal of greenhouse gases such as SO2, NO, NO2, H2S, HCl, water and CO2 as well as heavy metals (e.g. mercury, arsenic, bismuth, cadmium, lead and/or selenium) from the flue gases of fossil-fueled utility and industrial plants by reacting the raw flue gas, firstly, with chlorine in a gas-phase oxidation reaction and recovering the resulting products as marketable products, and then, secondly, treating the cleaned gas, which includes CO2, with a Sabatier reaction to produce a hydrocarbon fuel (e.g. methane). The system also includes an electrolytic unit for electrolyzing HCl to produce hydrogen gas for the Sabatier reaction as well as chlorine gas, which may then be recycled into the reactor.

Abstract: A process for producing polysilicon, includes a) depositing polycrystalline silicon on filaments using reaction gas containing silicon-containing component (SCC) containing trichlorosilane, and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%; b) feeding offgas from the deposition into a cooling apparatus, i) wherein condensed offgas components containing SiCl4 are conducted to an apparatus which enables distillative purification of the condensate, and ii) non-condensing components are conducted to an adsorption or desorption unit; c) obtaining a first stream of non-condensing components purified by adsorption and containing hydrogen; and d) obtaining, during adsorption unit regeneration, a second stream of non-condensing components, containing SiCl4 which is then preferably supplied to a converter for conversion of SiCl4 to trichlorosilane.

Abstract: Installation of a shield around a Siemens reactor prior to harvesting polysilicon rods produced therein allows the upper, bell jar-like shell to be removed for cleaning, while protecting the polysilicon rods from contamination and increasing safety of nearby personnel. The polysilicon rods are harvested while the shield is present.

Abstract: The Siemens process for deposition of polycrystalline silicon in the form of rods in a sealed reactor is improved by, after introduction of deposition gas has ceased, introducing a ventilating gas into the partially sealed reactor, withdrawing a gas stream from the reactor, and monitoring the components in the gas stream withdrawn until a desired concentration of one or more components is reached, and opening the reactor to remove the rods.

Abstract: The content of phosphorus in polycrystalline silicon prepared by the Siemens process is reduced by treating phosphorus-containing steel surfaces with an ?-amino-functional alkoxysilane. The treated surface exhibits less corrosion in an atmosphere of moist hydrogen chloride, and less loss of phosphorus as a result.

Abstract: Installation of a shield around a Siemens reactor prior to harvesting polysilicon rods produced therein allows the upper, bell jar-like shell to be removed for cleaning, while protecting the polysilicon rods from contamination and increasing safety of nearby personnel. The polysilicon rods are harvested while the shield is present.

Abstract: The Siemens process for deposition of polycrystalline silicon in the form of rods in a sealed reactor is improved by, after introduction of deposition gas has ceased, introducing a ventilating gas into the partially sealed reactor, withdrawing a gas stream from the reactor, and monitoring the components in the gas stream withdrawn until a desired concentration of one or more components is reached, and opening the reactor to remove the rods.

Abstract: The content of phosphorus in polycrystalline silicon prepared by the Siemens process is reduced by treating phosphorus-containing steel surfaces with an ?-amino-functional alkoxysilane. The treated surface exhibits less corrosion in an atmosphere of moist hydrogen chloride, and less loss of phosphorus as a result.

Abstract: A process for producing polysilicon, includes a) depositing polycrystalline silicon on filaments using reaction gas containing silicon-containing component (SCC) containing trichlorosilane, and hydrogen, wherein molar saturation of SCC based on hydrogen is at least 25%; b) feeding offgas from the deposition into a cooling apparatus, i) wherein condensed offgas components containing SiCl4 are conducted to an apparatus which enables distillative purification of the condensate, and ii) non-condensing components are conducted to an adsorption or desorption unit; c) obtaining a first stream of non-condensing components purified by adsorption and containing hydrogen; and d) obtaining, during adsorption unit regeneration, a second stream of non-condensing components, containing SiCl4 which is then preferably supplied to a converter for conversion of SiCl4 to trichlorosilane.

Abstract: A shopping cart sanitizing apparatus and method is provided that uses a wash tunnel to automatically dispense sanitizing agents onto shopping carts. The wash tunnel uses a conveyor or other means for moving shopping carts into the apparatus, where sanitizing agents are automatically dispensed onto the shopping carts. Suitable sanitizing agents include soap and water, chemical agents, or a combination of disinfecting fluids.