Abstract: An optoelectronic component comprising a semiconductor body, a first connection layer, an insulation layer and a second connection layer, wherein the semiconductor body has an active region for generating electromagnetic radiation and the second connection layer comprises a first partial layer and a second partial layer is specified, wherein the insulation layer electrically insulates the first connection layer from the second connection layer, the first partial layer is arranged between the second partial layer and the semiconductor body in a vertical direction, in a plan view of the semiconductor body the first connection layer overlaps the first partial layer and is spaced apart from the second partial layer in a lateral direction, and the first connection layer has a first layer thickness and the second partial layer has a second layer thickness, wherein the first layer thickness and the second layer thickness differ from one another at most by 20%.