Abstract: A method and an apparatus (15) for computer-implemented determination of physical properties of a porous layer (1) present on a surface of a substrate. The physical properties include at least a layer thickness (d) of the layer, a porosity (p) of the layer and a roughness (r) of the layer at an interface (9) with the substrate supporting the layer. The method includes recording a reflectance curve (39) concerning light (25) irradiated onto the porous layer within a wavelength range in which the porous layer is largely transparent, setting a predetermined roughness start value, setting a porosity start value based on knowledge concerning a manufacturing process for forming the porous layer, setting a layer thickness start value based on an evaluation of periodic fluctuations of reflectance intensities within the recorded reflectance curve, and determining the physical properties of the porous layer by computer-implemented fitting of the recorded reflectance curve using a non-linear least squares method.

Abstract: What is proposed is a method of producing at least two differently heavily doped subzones (3, 5) predominantly doped with a first dopant type in a silicon substrate (1), in particular for a solar cell. The method comprises: covering at least a first subzone (3) of the silicon substrate (1) in which a heavier doping with the first dopant type is to be produced with a doping layer (7) of borosilicate glass, wherein at least a second subzone (5) of the silicon substrate (1) in which a lighter doping with the first dopant type is to be produced is not covered with the doping layer (7), and wherein boron as a dopant of a second dopant type differing from the first dopant type and oppositely polarized with respect to the same is included in the layer (7), and; heating the such prepared silicon substrate (1) to temperatures above 300° C., preferably above 900° C., in a furnace in an atmosphere containing significant quantities of the first dopant type.

Abstract: A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a semiconductor substrate (1) has been provided, various doped regions (3, 5) are formed in partial regions of a surface of the semiconductor substrate, the various doped regions (3, 5) differing as regards their doping concentration and/or their doping polarity. The various doped regions (3, 5) are then purposively etched-back in order to achieve desired doping profiles, and finally electrical contacts (21) are formed at least at some of the doped regions (3, 5). The etching-back of the various doped regions takes place in a common etching operation in an etching medium.

Abstract: What is proposed is a method of producing at least two differently heavily doped subzones (3, 5) predominantly doped with a first dopant type in a silicon substrate (1), in particular for a solar cell. The method comprises: covering at least a first subzone (3) of the silicon substrate (1) in which a heavier doping with the first dopant type is to be produced with a doping layer (7) of borosilicate glass, wherein at least a second subzone (5) of the silicon substrate (1) in which a lighter doping with the first dopant type is to be produced is not covered with the doping layer (7), and wherein boron as a dopant of a second dopant type differing from the first dopant type and oppositely polarized with respect to the same is included in the layer (7), and; heating the such prepared silicon substrate (1) to temperatures above 300° C., preferably above 900° C., in a furnace in an atmosphere containing significant quantities of the first dopant type.

Abstract: A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a semiconductor substrate (1) has been provided, various doped regions (3, 5) are formed in partial regions of a surface of the semiconductor substrate, the various doped regions (3, 5) differing as regards their doping concentration and/or their doping polarity. The various doped regions (3, 5) are then purposively etched-back in order to achieve desired doping profiles, and finally electrical contacts (21) are formed at least at some of the doped regions (3, 5). The etching-back of the various doped regions takes place in a common etching operation in an etching medium.

Abstract: The invention proposes a method for producing a semiconductor component, such as a thin-layer solar cell. The method involves providing a doped semiconductor carrier substrate (1), producing a separating layer (2), for example a porous layer, on one surface of the semiconductor carrier substrate, depositing a doped semiconductor layer (3) over the separating layer and detaching the deposited semiconductor layer from the semiconductor carrier substrate. In line with the invention, process parameters such as the process temperature and time are chosen during the manufacturing process such that dopants can diffuse from the separation layer into the deposited semiconductor layer in order to form a specifically doped surface area (4). Specific use of solid-state diffusion makes it possible to simplify the manufacturing process over conventional fabrication methods in this manner.