Abstract: Selective reflective optical apparatus includes a projection screen. The projection screen has structure constructed and arranged to selectively reflect only incident optical energy of a predetermined number of narrow bands of optical wavelength regions.

Abstract: A sputtering apparatus of the present invention includes a chamber for containing a plasma. A first and a second target are positioned in the chamber proximate to a substrate. The first and the second targets include at least one type of target material. A power supply is coupled to the first and the second targets. The power supply supplies power to the first and the second targets such that when the first target sputters target material, the second target becomes anodic and when the second target sputters target material, the first target becomes anodic. The sputtering apparatus also includes a reactive source that supplies reactive species proximate to the substrate. The reactive species are supplied in synchronization with the power supplied to the first and the second targets. The reactive species combines with the sputtered target material to generate a sputtered film on the substrate.

Abstract: Methods, apparatus and system for controlling ambient light to produce controlled ambient light having predefined optical spectrum characteristics in order to effect a modified color gamut of a reflected image that is reflected from a surface. The reflected image including reflected portions of the controlled ambient light and reflected portions of a projected image directed from an image projector to the surface. The reflected image having a first color gamut in the presence of uncontrolled ambient light. The reflected image having the modified color gamut in the presence of the controlled ambient light.

Abstract: An assembly for use in a projection screen that includes a metal reflective surface, and a layer above the metal reflective surface to reduce an amount of difference in reflectivity of the metal reflective surface for light polarized in two different directions.

Abstract: Methods and apparatus for forming two orthogonally polarized beams of light from an unpolarized beam of light using one of at least two different image modes, the forming includes a color filtering process that is based on the image mode being used, and projecting the two orthogonally polarized beams to form an image on a viewing surface. Methods and apparatus for separating an unpolarized light beam into four beams as a function of wavelength and polarization; selectively modulating the four beams respectively using four light valves; and combining the four modulated beams to generate two orthogonally polarized light beams.

Abstract: A projection system that includes a projector that projects light in wavelength bands, including a non-laser light source and a screen that includes at least two metal layers separated by a layer of dielectric material. The screen is constructed and arranged to reflect light in the wavelength bands projected by the projector and to not reflect light not in the wavelength bands.

Abstract: An assembly for use in a projection screen that includes a metal reflective surface, and a layer above the metal reflective surface to reduce an amount of difference in reflectivity of the metal reflective surface for light polarized in two different directions.

Abstract: Broader spectrum light is enhanced with light of a narrower spectrum.

Abstract: Selective reflective optical apparatus includes a projection screen. The projection screen has structure constructed and arranged to selectively reflect only incident optical energy of a predetermined number of narrow bands of optical wavelength regions.

Abstract: Selective reflective optical apparatus includes a projection screen. The projection screen has structure constructed and arranged to selectively reflect only incident optical energy of a predetermined number of narrow bands of optical wavelength regions.

Abstract: A projection screen that includes a multilayer, multiband, single stack device that selectively reflects light with wavelengths in plurality of narrow wavelength bands, and methods for making the screen. The multilayer, multiband, single stack device may be an etalon device. The multiple layers may be deposited on a diffusing substrate. The projection screen may also include a polarizer that coacts with a projector. The projector polarizes the projected light in the narrow wavelength bands into the same polarity and the screen reflects the light with the same polarization and does not reflect light of another polarization. The polarizer may include substrate with a thin polarizing coating. The screen may include a matte surfaced diffuser.

Abstract: Selective reflective optical apparatus includes a projection screen. The projection screen has structure constructed and arranged to selectively reflect only incident optical energy of a predetermined number of narrow bands of optical wavelength regions.

Abstract: Cryofilm/organic contaminants are removed from cryogenically cooled surfaces such as spacecraft cryo-telescope mirrors by sputtering and chemical reaction with a low energy plasma having an average ion energy of not more than about 30 eV, and preferably in the approximate range of 5-20 eV. When the reactive plasma's freezing point is higher than the temperature of the surface to be cleaned, the cryofilm and embedded hydrocarbons are first removed with a non-reactive plasma having a freezing point less than the surface temperature, the reactive plasma is then used to remove residual organic contaminants left on the surface by chemical reaction, and finally another inert plasma is applied to remove reactive plasma frozen to the surface; the two inert plasmas are preferably formed from the same gas.

Abstract: Disclosed is an antireflection film used to be stuck on the surface of a glass panel of a CRT, which can be inexpensively manufactured at a high productivity while satisfying all of requirements regarding its adhesive strength, reflectance characteristic, electric resistance and total light transmittance. The antireflection film is formed by stacking silicon oxide films and indium tin oxide films on a base film in multilevels, wherein the thickness of the uppermost silicon oxide film of the antireflection film is thicker than the indium tin oxide film directly under the uppermost silicon oxide film, and the lowermost silicon oxide film, positioned at the interface with the base film, of the antireflection film is a SiOx film where the value x is in a range of 0.5 to 1.9.

Abstract: An anti-reflection film having high electrical conductivity and high anti-reflection effect over a wide frequency range despite its simplified structure. The anti-reflection film has two mutually neighboring layers which are deposited directly or via a hard coating layer on a supporting layer. A first layer of the layers that is closer to a supporting layer is formed of an electrically conductive material capable of absorbing light, while the remaining second layer is formed of a material having a refractive index not higher than 2.0. If the first layer has the refractive index and the extinction coefficient for a shorter wavelength &lgr;v of n v and k,v respectively, and the refractive index and the extinction coefficient for a longer wavelength &lgr;r of nr and kr, respectively, nv is larger than nr and kv is smaller than kr (nv>nr and kv<kr).

Abstract: Contaminants are cleaned from the surface of a body in space by generating a substantially space-charge neutral reactive plasma, directing the plasma onto the contaminated surface at an energy below the surface sputtering energy (typically 20 eV), and reacting the plasma with the contaminants to remove them. A helicon wave plasma source is made light weight and compact enough for spacecraft use, with a plasma energy low enough to avoid damaging optical surfaces, by using permanent magnets to establish a static axial magnetic field, and a simple but novel rf antenna design. The antenna consists of a pair of spaced conductive rings which extend around the plasma tube, with conductive base and rf feed bars extending between the rings on diametrically opposite sides. The feed bar is interrupted to provide an rf input on opposite sides of the interruption. The antenna is preferably formed as an integral metal unit, with its rings rigidly supported by and integral with opposite ends of the base bar.

Abstract: Contaminants are cleaned from the surface of a body in space by generating a substantially space-charge neutral reactive plasma, directing the plasma onto the contaminated surface at an energy below the surface sputtering energy (typically 20 eV), and reacting the plasma with the contaminants to remove them. A helicon wave plasma source is made light weight and compact enough for spacecraft use, with a plasma energy low enough to avoid damaging optical surfaces, by using permanent magnets to establish a static axial magnetic field, and a simple but novel rf antenna design. The antenna consists of a pair of spaced conductive rings which extend around the plasma tube, with conductive base and rf feed bars extending between the rings on diametrically opposite sides. The feed bar is interrupted to provide an rf input on opposite sides of the interruption. The antenna is preferably formed as an integral metal unit, with its rings rigidly supported by and integral with opposite ends of the base bar.

Abstract: Contaminants are cleaned from the surface of a body in space by generating a substantially space-charge neutral reactive plasma, directing the plasma onto the contaminated surface at an energy below the surface sputtering energy (typically 20 eV), and reacting the plasma with the contaminants to remove them. A helicon wave plasma source is made light weight and compact enough for spacecraft use, with a plasma energy low enough to avoid damaging optical surfaces, by using permanent magnets to establish a static axial magnetic field, and a simple but novel rf antenna design. The antenna consists of a pair of spaced conductive rings which extend around the plasma tube, with conductive base and rf feed bars extending between the rings on diametrically opposite sides. The feed bar is interrupted to provide an rf input on opposite sides of the interruption. The antenna is preferably formed as an integral metal unit, with its rings rigidly supported by and integral with opposite ends of the base bar.

Abstract: Contaminants are cleaned from the surface of a body in space by generating a substantially space-charge neutral reactive plasma, directing the plasma onto the contaminated surface at an energy below the surface sputtering energy (typically 20 eV), and reacting the plasma with the contaminants to remove them. A helicon wave plasma source is made light weight and compact enough for spacecraft use, with a plasma energy low enough to avoid damaging optical surfaces, by using permanent magnets to establish a static axial magnetic field, and a simple but novel rf antenna design. The antenna consists of a pair of spaced conductive rings which extend around the plasma tube, with conductive base and rf feed bars extending between the rings on diametrically opposite sides. The feed bar is interrupted to provide an rf input on opposite sides of the interruption. The antenna is preferably formed as an integral metal unit, with its rings rigidly supported by and integral with opposite ends of the base bar.

Abstract: A method for eutectically attaching a silicon chip to a gold-coated substrate. Prior to heating and scrubbing of the silicon chip against the gold surface, a gold lattice structure is placed between the silicon chip bottom surface and the gold surface. The gold lattice structure contacts the silicon chip bottom surface over an area equal to less than ten percent of the total surface area of the chip bottom surface. The point source contact between the gold lattice and silicon chip promotes formation of the gold/silicon eutectic alloy at temperatures of between 400.degree. to 475.degree. C. The gold/silicon eutectic alloy spreads between the silicon chip bottom surface and gold top surface to provide eutectic bonding. The method is especially useful in bonding relatively large silicon chips or dies to gold-coated substrates wherein the bottom surface or back side of the chip is not coated with a protective metal layer.