Abstract: A microbolometer film material VOx having a value such that the thermal coefficient of resistance is between 0.005 and 0.05. The film material may be formed on a wafer. The VOx material properties can be changed or modified by controlling certain parameters in the ion beam sputter deposition environment. There is sufficient control of the oxidation process to permit non-stoichometric formation of VOx films. The process is a low temperature process (less than 100 degrees C.). Argon is used for sputtering a target of vanadium in an environment wherein the oxygen level is controlled to determine the x of VOx. The thickness of the film is controlled by the time of the deposition. Other layers may be deposited as needed to form pixels for a bolometer array.

Abstract: Producing the microstructures on separate substrates, which are bonded. One of these structures may be temperature sensitive CMOS electronics. There may be a high-temperature thermal sensor on one wafer and low-temperature CMOS electronics. In the case where the bonding material is polyimide, the polyimide on both surfaces to be bonded is soft baked. The wafers are placed in a wafer bonder and, using precision alignment, brought into contact. The application of pressure and heat forms a bond between the two coatings of polyimide. A wafer may need to be removed from a combined structure. One of the bonded structures may be placed on a sacrificial layer that can be etched away to facilitate removal of a wafer without grinding. After wafer removal, a contact from the backside of one of the structures now on polyimide to the other on the wafer may be made. Sacrificial material, for example, polyimide, may be removed from between the structures that are connected via a contact.

Abstract: A sensor having an active sensing material exposed to the substance to be detected and an active reference material that is shielded from the substance to be detected. Thermocouples having a set of junctions proximate to the active sensing material and another set of junctions to the active reference material for measuring the temperatures at the respective materials. The junctions are connected differentially in that a difference of the two temperatures is measured. A heater is proximate and common to the two materials. Heat pulses may be applied to the materials via the heater and the temperatures are measured. If ambient factors or substances affect the active sensing material, its thermal response will be different than that of the active reference material, and a differential pulse-like indication of temperature will be detected.

Abstract: A structure and method of making resistive emitting members which exhibit high resistivity while at the same time providing high temperature operation significantly above that known in the art. Specifically the use of nitrides of Group IVB transition metals from the periodic table, exclusive of titanium is described.

Abstract: A dual function pixel of an array, having a large fill factor, for detecting visible light and infrared radiation through the same surface area of the pixel. Infrared radiation is absorbed by a conductive oxide layer. This absorbing layer heats up a heat detection layer which thereby indicates the impingement infrared radiation. An infrared reflecting layer made from a conductive oxide reflects infrared light passing through the absorbing layer, back to the absorbing layer. Visible light can pass through all of the layers of the pixel, which are optically transparent, to a visible light detector situated in the substrate of each pixel of the array.

Abstract: The present invention provides a much more optimum design for an infrared pixel microstructure. The configuration of the microstructure itself is designed to optimum operational characteristics including faster speeds than previously available. These faster speeds are achieved by reducing the thermal mass of the pixel itself, thus directly affecting the pixels associated thermal time constant. Thermal mass is reduced by tailoring the cross section of the pixel structure such that protective layers are substantially reduced in areas where they are not necessary. This results in the desired reduction and overall pixel mass and consequently more optimum pixel performance.

Abstract: A structure and method of making resistive emitting members which exhibit high resistivity while at the same time providing high temperature operation significantly above that known in the art. Specifically the use of nitrides of Group IVB transition metals from the periodic table, exclusive of titanium is described.

Abstract: A micromachined integrated opto-fluidic or opto-acoustic sensor having a rapidly intensity-varying or pulsing light source, an interference filter, a gas cavity, which may or may not be an optical and/or acoustic resonator tuned to a particular wavelength of light, or sound frequency, into which the detected gas can diffuse into via a filter, and a fluidic or pressure sensor to detect the heating and cooling, and the resulting expansion and contraction of the gas due to the absorption of light at the particular wavelength by the specific gas being detected. The presence of other gases is inferred from the detected gas.

Abstract: A micromachined integrated opto-fluidic or opto-acoustic sensor having a rapidly intensity-varying or pulsing light source, an interference filter, a gas cavity, which may or may not be an optical and/or acoustic resonator tuned to a particular wavelength of light, or sound frequency, into which the detected gas can diffuse into via a filter, and a fluidic or pressure sensor to detect the heating and cooling, and the resulting expansion and contraction of the gas due to the absorption of light at the particular wavelength by the specific gas being detected. The presence of other gases is inferred from the detected gas.

Abstract: An array for projecting thermal images and a method of making same. The array of the present invention combines a two-tier architecture created with special processing whereby each pixel member resides on an elevated platform directly over discrete pixel control electronics and electrically conducting traces couple a plurality of pixels so that they can be controlled to project thermal images at equal to or faster than video frame rates. Microlens assemblies coupled to each discrete pixel improves the thermal efficiency of the array for certain applications. In the method of fabrication, a semiconductor microbridge-type structure obtains with the use of sacrificial layers under deposited pixel members in a compact array so that the pixel electronics reside beneath their associated pixel and the array electronics inhabit the same chip as the array thereby improving fill factor and time constant of the resulting array.

Abstract: A monolithically constructed infrared, tunable Fabry-Perot cavity filter-detector for spectroscopic detection of particular substances having an absorption line in the wavelength range from 2 to 12 microns. The filter-detector has a hermetically sealed Fabry-Perot cavity that has a mirror which has an adjustable distance relative to another mirror of the cavity. The former mirror is adjusted by piezoelectric film on the mirror support or with piezoelectric stacks or wall supporting the mirror. There may be electrodes situated near the mirrors for capacitive sensing of the distance between the mirrors. Light to be filtered and detected comes in through a window wafer which may have diffractive or refractive microlenses, plus an optional spatial filter. After passing through the window wafer, the light is filtered by the tunable mirrors of the Fabry-Perot cavity. The portion of the light that is passed by the cavity is detected by an infrared microbolometer or a CCD array.

Abstract: A solid-state oxygen microsensor measuring the potential difference (EMF) generated across two electrodes deposited on a solid oxygen ion conducting electrolyte and located in a constant temperature gradient in the same ambient atmosphere is provided. An output voltage of the sensor is proportional to the corresponding temperature gradient established across the electrodes and the oxygen partial pressure of the ambient atmosphere at such time. The solid-state oxygen microsensor is useful in the application of combustion systems, for example, to maintain and improve combustion efficiency levels and reduce undesirable emissions within the exhaust.

Abstract: A solid-state oxygen microsensor which measures the potential difference (EMF) generated by two spaced apart electrodes deposited on a solid oxygen ion conducting electrolyte and located in a known and preferably constant temperature gradient in the same ambient atmosphere. Output voltage of the sensor is proportional to the temperature gradient established across the electrodes and the unknown oxygen partial pressure of the ambient atmosphere. The solid-state oxygen microsensor is useful for application to systems such as combustion systems to maintain and improve combustion efficiency levels and exhaust gas cleanliness.

Abstract: A magnetron sputtering apparatus can be used to achieve high quality coating on substrates if the substrates are positioned adjacent to the sputtering target. Furthermore, the coating can be enhanced if the substrate is rotated in a planetary manner about the sputtering target. This device can be used in the production of high quality mirrors if the device allows for alternating coatings of different materials.

Abstract: A microstructure design for high IR sensitivity having a two level infrared bolometer microstructure, the lower level having a reflective metal film surface such as Pt, Au, or Al to reflect IR penetrating to that level, the upper level being separated from the lower level by an air gap of about 1-2 microns which allows the reflected IR to interfere with the incident IR and increase the sensitivity to a higher level.

Abstract: A rugged O.sub.2 microsensor constructed from Si, and Pt, Si.sub.3 N.sub.4 and ZrO.sub.2 thin films which is free standing and isolated from the silicon substrate in combination with a counter electrode and a heater in a bow-tie configuration. The sensor combines an integral heater made from platinum which is deposited on a silicon wafer as a thin film. The thin film heater heats a small yttria-stabilized zirconia sensor that sends a signal proportional to the amount of oxygen in the ambient environment through a counter electrode. The sensor and heater are supported on the silicon wafer by a thin layer of silicon nitride.

Abstract: Disclosed is a ring laser angular rate sensor constructed from a solid block with mirror assemblies joined to the block with a thermally formed gas tight seal. The mirror assemblies include a coating of alternating layers of zirconium dioxide (ZrO.sub.2) and silicon dioxide (SiO.sub.2) which have been ion beam sputtered on mirror substrates composed of a material which suitably matches the thermal coefficient of the laser block.

Abstract: Precise thickness control for high performance optical coatings is provided in an optical coating system utilizing an optical monitor. The optical monitor utilizes a light source and detecting arrangement that measures a sample optical element through the expedient of a light path altering structure that is not coincident with the axis of rotation of a deposition carrousel structure that supports optical elements being coated. The light source and detector arrangements can be mounted conveniently outside of the vacuum chamber of the optical coating system.

Abstract: An array for projecting thermal images and a method of making same. The array of the present invention combines a two-tier architecture created with special processing whereby each pixel member resides on an elevated platform directly over discrete pixel control electronics and electrically conducting traces couple a plurality of pixels so that they can be controlled to project thermal images at equal to or faster than video frame rates. Microlens assemblies coupled to each discrete pixel improves the thermal efficiency of the array for certain applications. In the method of fabrication, a semiconductor microbridge-type structure obtains with the use of sacrificial layers under deposited pixel members in a compact array so that the pixel electronics reside beneath their associated pixel and the array electronics inhabit the same chip as the array thereby improving fill factor and time constant of the resulting array.

Abstract: A microstructure design for high IR sensitivity having a two level infrared bolometer microstructure, the lower level having a reflective metal film surface such as Pt, Au, or Al to reflect IR penetrating to that level, the upper level being separated from the lower level by an air gap of about 1-2 microns which allows the reflected IR to interfere with the incident IR and increase the sensitivity to a higher level.