Abstract: A microactuator finely positions a transducing head carried by a slider adjacent a select radial track of disc. A frame of the microactuator includes a motor for altering the position of the slider and a closed bonding tub extending upward from the bottom of the microactuator having a bonding surface to engage the top surface of the slider. The closed bonding tub is formed from the microactuator frame such that there is a tub bottom having a bonding surface, sidewalls and an open sidewall.

Abstract: A moving-coil magnetic microactuator is formed by using a dual silicon wafer structure and thin film technologies such as deep trench reactive ion etching, reactive ion etching, plasma-enhanced chemical vapor deposition and metallo-organinc chemical vapor deposition. Several bottom structures are formed from a bottom wafer, each bottom structure having a coil and wires embedded in the surface of the bottom structure. Several top structures are formed from a top wafer, each top structure having a magnet and mechanical stand-offs. The top structures are bonded to the bottom structures so that the magnet is above the embedded coil, separated by an air gap created by the mechanical stand-offs.

Abstract: An apparatus and method is provided for uniformly coating a magnet having a plurality of surfaces and includes a reaction chamber having a port for introducing the magnet into the reaction chamber. A heater is also included for heating the reaction chamber. Also, a carrier gas port is in fluid communications with the reaction chamber for introducing a carrier gas into the reaction chamber. In addition, a reactant gas port is in fluid communications with the reaction chamber for introducing a reactant gas into the reaction chamber. When the magnet and the carrier gas are introduced into the reaction chamber, the magnet becomes suspended in the reaction chamber. Also, when the reactant gas is introduced into the reaction chamber, the reactant gas causes all of the plurality of surfaces of the magnet to be uniformly coated.

Abstract: This invention presents a method and system for etching a silicon substrate. This includes depositing a non-thermally cured photoresist mask on the upper region of a trench in the silicon substrate. A fluorocarbon film is deposited on the silicon substrate, and the silicon substrate is bombarded with ions. As a result, the fluorocarbon film is preferentially removed from the lower region of the trench in the substrate, and the upper region of the trench is substantially protected by the photoresist mask. This invention can include curing the photoresist mask using an electron-beam system.