Abstract: Devices and methods related to high power diode switches. In some embodiments, a radio-frequency (RF) switch circuit can include a plurality of first switchable paths implemented between a pole and a first throw, with each first switchable path including one or more PIN diodes. The RF switch circuit can further include a second switchable path implemented between the pole and a second throw, with the second switchable path including one or more PIN diodes. The pole can be an antenna port, and the first and second throws can be transmit (TX) and receive (RX) ports, respectively.

Abstract: Devices and methods related to high power diode switches. In some embodiments, a radio-frequency (RF) switch circuit can include a plurality of first switchable paths implemented between a pole and a first throw, with each first switchable path including one or more PIN diodes. The RF switch circuit can further include a second switchable path implemented between the pole and a second throw, with the second switchable path including one or more PIN diodes. The pole can be an antenna port, and the first and second throws can be transmit (TX) and receive (RX) ports, respectively.

Abstract: Devices and methods related to high power diode switches. In some embodiments, a radio-frequency (RF) switch circuit can include a plurality of first switchable paths implemented between a pole and a first throw, with each first switchable path including one or more PIN diodes. The RF switch circuit can further include a second switchable path implemented between the pole and a second throw, with the second switchable path including one or more PIN diodes. The pole can be an antenna port, and the first and second throws can be transmit (TX) and receive (RX) ports, respectively.