Abstract: An improved barrier layer structure for the prevention of migration within a semiconductor device can be formed from a refractory metal compound such as a refractory metal nitride. The preferred barrier layer structure includes at least two adjacent layers of essentially the same chemical composition having an essentially continuous interfacial region between them, wherein the interfacial region is at least 10 .ANG. thick. As an alternative to having a continuous interfacial region, a series of adjacent layers which provide sufficient interfacial regions can be used in combination to block the migration of mobile atoms such as silicon. When a series of layers is used, there should be at least 3 layers, and preferably 5 or more layers, where each layer is at least about 50 .ANG. thick. In addition, to break the continuity of channels passing through grain boundaries, alternating layers of substantially grain oriented, columnar microstructure and amorphous, non-columnar structure are preferred.

Abstract: The aluminum <111> crystal orientation content of an aluminum interconnect layer or the copper <111> crystal orientation content of a copper interconnect can be maintained at a consistently high value during the processing of an entire series of semiconductor substrates in a given process chamber. To provide the stable and consistent aluminum <111> content, or the stable and consistent copper <111> content, it is necessary that the barrier layer structure underlying the aluminum or the copper have a consistent crystal orientation throughout the processing of the entire series of substrates, as well. We have determined that to ensure the consistent crystal orientation content of the barrier layer structure, it is necessary to form the first layer of the barrier layer structure to have a minimal thickness of at least about 150 .ANG., to compensate for irregularities in the crystal orientation which may by present during the initial deposition of this layer.