Abstract: An electrical connector 50 of the type having a C-shaped body member 52 having laterally opposing arcuate ears 60 extending therealong from a wide to a narrow end, the wide end being adapted to receive a wedge member 72 having opposed converging side surfaces 80 defining wire-receiving channels 70 in cooperation with corresponding ones of the arcuate ears 60 opposed therefrom, all for receipt thereinto of respective uninsulated wire conductors therealong to be interconnected upon compression between the wedge member 72 and the C-shaped body member 52 by actuation of a drive bolt 44 causing the wedge member 72 to be driven into the wide end of the C-shaped body member and held therein. The C-shaped body member 52 includes an axial corrugation 64 extending from a far end to a transverse section at a bolt receiving end 67 defining a bolt receiving relief 65, the relief 65 having a concave dimension just large enough to permit passage of a bolt shank therealong.

Abstract: An electrical wire connector (10) has a C-shaped body section having arcuate ears (22) laterally therealong and converging from a wide end to a narrow end and forming wire grooves (24), a wedge having converging concave side surfaces (32) forming wire channels opposing wire grooves (24) when inserted into the wide end of the C-shaped member (12), and a shear head drive bolt (50) for urging the wedge (14) into the C-shaped member upon actuation to compress and thus interconnect respective wires (16,18) placed along the wire channels. The drive bolt (50) has an outer hexagonal head (54) joined to a smaller inner hexagonal head (56) at a frangible section to be sheared off upon achievement of a selected torque level which assures interconnection of the wires when attained.

Abstract: A method of forming laser-patterned conductive elements on a thin film of semiconductor material in a semiconductor device by fabricating a thin film of metal on the semiconductor material and scribing the semiconductor film along a desired pattern with a laser operated at a power density sufficient to ablate the semiconductor material along the desired pattern. The ablation of the semiconductor material produces gases that structurally weaken and burst through the metal film along the desired pattern to form gaps separating the metal film into a plurality of conductive elements, for example, back electrodes on a thin-film photovoltaic module.