Abstract: A method for following specific participants from among participants of a group conversation over a communications network is implemented on a computing device and includes: presenting participant posts from the participants of a group conversation in an application window, detecting at least one request to follow at least one of the specific participants as a followed participant, and presenting the participant posts associated with at least one followed participant in an application sub-window.

Abstract: A multi-stage Radio Frequency (RF) power amplifier is presented herein. According to one embodiment, the amplifier comprises: a first amplification stage configured to amplify an input signal to provide a first output signal having a phase distortion; a second amplification stage having an input and configured to amplify the first output signal that is received at the input to provide a second output signal, wherein the second output signal has a carrier frequency (FC) modulated by a signal content (S) having a signal content bandwidth (FS); and a resonant circuit comprising an inductor and a capacitor and having a resonant frequency (FR), the resonant circuit coupled to the input of the second amplification stage and compensating for the phase distortion caused by the first amplification stage at frequencies within the signal content bandwidth FS, wherein the resonant frequency FR is less than the signal content bandwidth FS.

Abstract: A method for following specific participants from among participants of a group conversation over a communications network is implemented on a computing device and includes: presenting participant posts from the participants of a group conversation in an application window, detecting at least one request to follow at least one of the specific participants as a followed participant, and presenting the participant posts associated with at least one followed participant in an application sub-window.

Abstract: A multi-stage Radio Frequency (RF) power amplifier is presented herein. According to one embodiment, the amplifier comprises: a first amplification stage configured to amplify an input signal to provide a first output signal having a phase distortion; a second amplification stage having an input and configured to amplify the first output signal that is received at the input to provide a second output signal, wherein the second output signal has a carrier frequency (FC) modulated by a signal content (S) having a signal content bandwidth (FS); and a resonant circuit comprising an inductor and a capacitor and having a resonant frequency (FR), the resonant circuit coupled to the input of the second amplification stage and compensating for the phase distortion caused by the first amplification stage at frequencies within the signal content bandwidth FS, wherein the resonant frequency FR is less than the signal content bandwidth FS.

Abstract: Embodiments include but are not limited to apparatuses and systems including a die or a preform including at least one groove configured to extend from at least one via of the die to an edge of the die. Other embodiments may be described and claimed.

Abstract: Embodiments include but are not limited to apparatuses and systems including a die or a preform including at least one groove configured to extend from at least one via of the die to an edge of the die. Other embodiments may be described and claimed.

Abstract: Embodiments include but are not limited to apparatuses and systems including a die or a preform including at least one groove configured to extend from at least one via of the die to an edge of the die. Other embodiments may be described and claimed.

Abstract: Embodiments of circuits, apparatuses, and systems for a protection circuit to protect against overdrive or overvoltage conditions. Other embodiments may be described and claimed.

Abstract: Embodiments of circuits, apparatuses, and systems for an overdrive protection circuit arranged at an input to a primary power transistor to protect against overdrive conditions, where the overdrive protection circuit includes a sensing resistor. Other embodiments may be described and claimed.

Abstract: Embodiments of circuits, apparatuses, and systems for an overdrive protection circuit arranged at an input to a primary power transistor to protect against overdrive conditions, where the overdrive protection circuit includes a sensing resistor. Other embodiments may be described and claimed.

Abstract: Embodiments of circuits, apparatuses, and systems for a protection circuit to protect against overdrive or overvoltage conditions. Other embodiments may be described and claimed.

Abstract: The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (uniformly or stepped) doping between the base region and the underlying subcollector region with the collector doping being lower near the base and higher near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.

Abstract: The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (continuous or stepped) doping between the base region and the underlying subcollector region with the collector doping being lowest near the base and highest near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.

Abstract: The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (uniformly or stepped) doping between the base region and the underlying subcollector region with the collector doping being lower near the base and higher near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.