Abstract: An ion implantation system is described, including: an ion implanter comprising a housing defining an enclosed volume in which is positioned a gas box configured to hold one or more gas supply vessels, the gas box being in restricted gas flow communication with gas in the enclosed volume that is outside the gas box; a first ventilation assembly configured to flow ventilation gas through the housing and to exhaust the ventilation gas from the housing to an ambient environment of the ion implanter; a second ventilation assembly configured to exhaust gas from the gas box to a treatment apparatus that is adapted to at least partially remove contaminants from the gas box exhaust gas, or that is adapted to dilute the gas box exhaust gas, to produce a treated effluent gas, the second ventilation assembly comprising a variable flow control device for modulating flow rate of the gas box exhaust gas between a relatively lower gas box exhaust gas flow rate and a relatively higher gas box exhaust gas flow rate, and a mot

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

Abstract: A fluid supply package comprising a pressure-regulated fluid storage and dispensing vessel, a valve head adapted for dispensing of fluid from the vessel, and an anti-pressure spike assembly adapted to combat pressure spiking in flow of fluid at inception of fluid dispensing.

Abstract: Gas supply systems and methods are described for delivery of gas to gas-utilizing process tools, e.g., gas-utilizing tools for manufacturing of semiconductor products, flat-panel displays, solar panels, etc. The gas supply systems may comprise gas cabinets that are arranged with adsorbent-based and/or interiorly pressure-regulated gas supply vessels therein, and a gas mixing manifold is described, which may be disposed in the gas cabinet or operated in a standalone fashion. In one aspect, gas supply systems are described in which vessels susceptible to cooling involving diminution of gas supply pressure are processed after pressure-controlled termination of dispensing operation, for dispensing operation achieving utilization of gas remaining in the vessel after such termination.

Abstract: Fluid dispensing assemblies are disclosed, for use in fluid supply packages in which such fluid dispensing assemblies as coupled to fluid supply vessels, for dispensing of fluids such as semiconductor manufacturing fluids. The fluid dispensing assemblies in specific implementations are configured to prevent application of excessive force to valve elements in the fluid dispensing assemblies, and/or for avoiding inadvertent or accidental open conditions of vessels that may result in leakage of toxic or otherwise hazardous or valuable gas. Also described are alignment devices for assisting coupling of coupling elements, e.g., coupling elements of fluid supply packages of the foregoing type, so that damage to such couplings as a result of misalignment is avoided.

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

Abstract: A fluid supply package comprising a pressure-regulated fluid storage and dispensing vessel, a valve head adapted for dispensing of fluid from the vessel, and an anti-pressure spike assembly adapted to combat pressure spiking in flow of fluid at inception of fluid dispensing.

Abstract: An ion implantation system is described, including: an ion implanter comprising a housing defining an enclosed volume in which is positioned a gas box configured to hold one or more gas supply vessels, the gas box being in restricted gas flow communication with gas in the enclosed volume that is outside the gas box; a first ventilation assembly configured to flow ventilation gas through the housing and to exhaust the ventilation gas from the housing to an ambient environment of the ion implanter; a second ventilation assembly configured to exhaust gas from the gas box to a treatment apparatus that is adapted to at least partially remove contaminants from the gas box exhaust gas, or that is adapted to dilute the gas box exhaust gas, to produce a treated effluent gas, the second ventilation assembly comprising a variable flow control device for modulating flow rate of the gas box exhaust gas between a relatively lower gas box exhaust gas flow rate and a relatively higher gas box exhaust gas flow rate, and a mot

Abstract: Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N2) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF3, N2F4, F2, SiF4, WF6, PF3, PF5, AsF3, AsF5, CF4 and other fluorinated hydrocarbons of CxFy (x?1, y?1) general formula, SF6, HF, COF2, OF2, BF3, B2F4, GeF4, XeF2, O2, N2O, NO, NO2, N2O4, and O3, and optionally hydrogen-containing gas, e.g.

Abstract: A scroll screen centrifugal separator includes a distributor that is configured to receive slurry received from a feed conduit. The distributor is configured to deflect the received slurry to a screen of the scroll screen centrifugal separator. In some embodiments, the distributor may include a distributor that has a flat surface encircled by a lip or having one or more lips positioned on the flat surface, an inclined surface, or a declined surface that faces the mouth of the feed conduit. In other embodiments, the distributor may include a plurality of dam members for defining passageways through which slurry is passable through the distributor prior to being ejected to a screen of the separator. In other embodiments, the distributor may include a distributor plate that has a plurality of radial arms attached thereto that are configured to direct slurry to the basket with a rotational velocity.

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

Abstract: A single piece pulsed flow wing assembly method providing for horizontal wing manufacture is accomplished using synchronized automated vehicles guided in a predetermined manner to move and, locate wing structure in a plurality of assembly positions. Multi-axis assembly positioning systems (MAPS) are used at each assembly position to support and index components in the wing structure and determinant assembly techniques are used for indexing of the components. Modular automated manufacturing processes employing magnetic assembly clamping, drilling, fastener insertion, and sealant application are employed.

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract: A single piece pulsed flow wing assembly method providing for horizontal wing manufacture is accomplished using synchronized automated vehicles guided in a predetermined manner to move and, locate wing structure in a plurality of assembly positions. Multi-axis assembly positioning systems (MAPS) are used at each assembly position to support and index components in the wing structure and determinant assembly techniques are used for indexing of the components. Modular automated manufacturing processes employing magnetic assembly clamping, drilling, fastener insertion, and sealant application are employed.

Abstract: A scroll screen centrifugal separator includes a distributor that is configured to receive slurry received from a feed conduit. The distributor is configured to deflect the received slurry to a screen of the scroll screen centrifugal separator. In some embodiments, the distributor may include a distributor that has a flat surface encircled by a lip or having one or more lips positioned on the flat surface, an inclined surface, or a declined surface that faces the mouth of the feed conduit. In other embodiments, the distributor may include a plurality of dam members for defining passageways through which slurry is passable through the distributor prior to being ejected to a screen of the separator. In other embodiments, the distributor may include a distributor plate that has a plurality of radial arms attached thereto that are configured to direct slurry to the basket with a rotational velocity.

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, equilibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.