Abstract: A circuit and method for digital controlling the slew rate of load voltage are provided. The circuit is comprised of a digital slew-rate control unit that utilizes a feedback signal to generate control signals where the feedback signal indicates the observed rate of voltage change on the load. The circuit is further comprised of a load driver circuit that is operated by the control signals and provides a slew-rate controlled output voltage used to operate a load switch, where the load switch provides power to the load. The circuit is configured to operate the load switch using a slew-rate controlling driver, depending on the state of the load switch transition, and a non-controlling driver.

Abstract: A circuit and method for digital controlling the slew rate of load voltage are provided. The circuit is comprised of a digital slew-rate control unit that utilizes a feedback signal to generate control signals where the feedback signal indicates the observed rate of voltage change on the load. The circuit is further comprised of a load driver circuit that is operated by the control signals and provides a slew-rate controlled output voltage used to operate a load switch, where the load switch provides power to the load. The circuit is configured to operate the load switch using a slew-rate controlling driver, depending on the state of the load switch transition, and a non-controlling driver.

Abstract: A circuit and method for digital controlling the slew rate of load voltage are provided. The circuit is comprised of a digital slew-rate control unit that utilizes a feedback signal to generate control signals where the feedback signal indicates the observed rate of voltage change on the load. The circuit is further comprised of a load driver circuit that is operated by the control signals and provides a slew-rate controlled output voltage used to operate a load switch, where the load switch provides power to the load. The circuit is configured to operate the load switch using a slew-rate controlling driver, depending on the state of the load switch transition, and a non-controlling driver.

Abstract: A circuit and method for digital controlling the slew rate of load voltage are provided. The circuit is comprised of a digital slew-rate control unit that utilizes a feedback signal to generate control signals where the feedback signal indicates the observed rate of voltage change on the load. The circuit is further comprised of a load driver circuit that is operated by the control signals and provides a slew-rate controlled output voltage used to operate a load switch, where the load switch provides power to the load. The circuit is configured to operate the load switch using a slew-rate controlling driver, depending on the state of the load switch transition, and a non-controlling driver.

Abstract: For adaptive electrostatic discharge (ESD) protection, an integrated circuit device having an adaptive electrostatic discharge (ESD) protection, has an external connection pin to be protected from ESD; an external ground connection pin; an adaptive electrostatic discharge (ESD) protection circuit having: an ESD protection N-metal oxide semiconductor (NMOS) transistor having drain connected to the external connection pin and a source and bulk connected to ground; a resistor coupled between a gate of the NMOS transistor and ground; a first PMOS transistor having a source coupled to a gate of the NMOS transistor and a drain connected to ground; a first capacitor having a first terminal connected to the external connection pin and a second terminal that is coupled with the gate of the NMOS transistor, wherein the first capacitor within the adaptive ESD protection circuit is the only capacitor connected to the external connection pin.

Abstract: For adaptive electrostatic discharge (ESD) protection, an integrated circuit device having an adaptive electrostatic discharge (ESD) protection, has an external connection pin to be protected from ESD; an external ground connection pin; an adaptive electrostatic discharge (ESD) protection circuit having: an ESD protection N-metal oxide semiconductor (NMOS) transistor having drain connected to the external connection pin and a source and bulk connected to ground; a resistor coupled between a gate of the NMOS transistor and ground; a first PMOS transistor having a source coupled to a gate of the NMOS transistor and a drain connected to ground; a first capacitor having a first terminal connected to the external connection pin and a second terminal that is coupled with the gate of the NMOS transistor, wherein the first capacitor within the adaptive ESD protection circuit is the only capacitor connected to the external connection pin.

Abstract: A ROM or flash memory with low power consumption includes control data used to retain information on the number of data bits that do not change relatively to an initial state. The proposed method allows the end of a reading operation to be determined with certainty, even under the effect of variable external factors. The memory's output amplifiers can be stopped as soon as they are not used in order to reduce consumption.