Abstract: A semiconductor cooling device for transferring heat from a semiconductor die (111). The semiconductor cooling device includes a heat dissipator (112) that may be thermally coupled to a semiconductor module (111) to be cooled for dissipating heat from the semiconductor die (111); a housing (150) in or on which the semiconductor die (111) is mounted; a fluid flow passage (153) for providing a forced fluid flow within the housing (150); and a fluid path (155) arranged to guide the forced fluid flow in a first direction between the fluid flow passage (153) and the heat dissipator (112) and further arranged to guide the fluid flow along the heat dissipator (112) in a second direction different to the first direction. In a particular embodiment, the semiconductor cooling device is used to dissipate heat from an array of LEDs.

Abstract: A light-emitting device comprises a light source adapted to emit light of a first wavelength range; a reflective body comprising a reflective layer; a wavelength converting layer comprising a wavelength converting material adapted to absorb light of said first wavelength range and to emit light of a second wavelength range, said wavelength converting layer and said light source being arranged mutually spaced apart; and light-scattering elements adapted to scatter light of at least said first wavelength range; wherein at least part of said light-scattering elements are arranged in the path of light from said light source to said wavelength converting layer. The light-emitting device according to the invention provides improved uniformity in color and also improved brightness uniformity.

Abstract: A semiconductor cooling device for transferring heat from a semiconductor die (111). The semiconductor cooling device includes a heat dissipator (112) that may be thermally coupled to a semiconductor module (111) to be cooled for dissipating heat from the semiconductor die (111); a housing (150) in or on which the semiconductor die (111) is mounted; a fluid flow passage (153) for providing a forced fluid flow within the housing (150); and a fluid path (155) arranged to guide the forced fluid flow in a first direction between the fluid flow passage (153) and the heat dissipator (112) and further arranged to guide the fluid flow along the heat dissipator (112) in a second direction different to the first direction. In a particular embodiment, the semiconductor cooling device is used to dissipate heat from an array of LEDs.

Abstract: A light-emitting device comprises a light source adapted to emit light of a first wavelength range; a reflective body comprising a reflective layer; a wavelength converting layer comprising a wavelength converting material adapted to absorb light of said first wavelength range and to emit light of a second wavelength range, said wavelength converting layer and said light source being arranged mutually spaced apart; and light-scattering elements adapted to scatter light of at least said first wavelength range; wherein at least part of said light-scattering elements are arranged in the path of light from said light source to said wavelength converting layer. The light-emitting device according to the invention provides improved uniformity in colour and also improved brightness uniformity.

Abstract: The device of the invention comprises a thin film transistor of an organic semiconductor material. This semiconductor material is patterned by applying first a protective layer and thereafter a photoresist. As a result hereof, the transistor of the invention (A) shows a very low leakage current and a low threshold voltage in comparison with prior art transistors (B,C).

Abstract: The synthesis of a precursor oligocene, particularly pentacene, is a two-step process. In the first step the Diels-Alder adduct of the a,b-dihydro-a,b-etheno-oligocene with a 1,1-dialkoxy-cyclopentadiene is formed. In the second step this Diels-Alder adduct is converted into the precursor oligocene, in that first the corresponding keto-compound is formed, which may be eliminated thereafter. The resulting precursor oligocene can be converted to the oligocene with a heat treatment, particularly after providing a solution hereof on a substrate. It is suitable for use as semiconductor material in a thin-film transistor. Formula (I).

Abstract: Provided is a method of manufacturing a field effect transistor with an organic semiconductor, and particularly a device comprising a plurality of field effect transistors with an interconnect structure. Herein, use is made of three photolithographical masks for four layers. Thereto, the transistor is provided in a top-gate structure, and the organic semiconductor layer (307) and the dielectric layer (309) are structure and patterned together. The semiconductor layer (307) and the dielectric layer (309) may be removed from areas not associated with field effect transistors (300) or with crossing conductors of the first and second conductor layer (303, 305, 501).

Abstract: A polymer comprising structural units of the formula I is prepared according to a novel method, in which the starting compound R1 ‘S—(CHR’2)—Ar—(CHR2)—SR1 is polymerized with a base, preferably in an aprotic solvent. The polymer comprises 50 to 1000 structural units of the formula I. The solution comprising the polymer thus prepared has a lower viscosity than a solution of a similar polymer with a greater chain length. The solution comprising the polymer thus prepared may be applied as a layer on a substrate. Electronic components with layers prepared with the polymer of the invention show better properties.

Abstract: The electronic device of the invention comprises one or more active elements, each comprising a first and a second electrode and an active layer of organic material separating the first and second electrodes. Examples of active elements are thin-film transistors and light-emitting diodes. The active layer comprises a polymeric material having conjugated units A and non-conjugated intermediate units B, which intermediate units B separate the conjugated units A from each other, such that no conjugation extends from a first conjugated unit A1 to a second conjugated unit A2. The polymeric material may be a polymer network, an alternating copolymer or a polymer in which the conjugated units are present in side chains. The polymer can be prepared from monomers having a B1-A1-B2 structure, wherein at least one of B1 and B2 comprises a reactive group enabling polymerization.

Abstract: The electronic device of the invention comprises one or more active elements, each comprising a first and a second electrode and an active layer of organic material separating the first and second electrodes. Examples of active elements are thin-film transistors and light-emitting diodes. The active layer comprises a polymeric material having conjugated units A and non-conjugated intermediate units B, which intermediate units B separate the conjugated units A from each other, such that no conjugation extends from a first conjugated unit A1 to a second conjugated unit A2. The polymeric material may be a polymer network, an alternating copolymer or a polymer in which the conjugated units are present in side chains. The polymer can be prepared from monomers having a B1-A1-B2 structure, wherein at least one of B1 and B2 comprises a reactive group enabling polymerization.

Abstract: Provided is a method of manufacturing a field effect transistor with an organic semiconductor, and particularly a device comprising a plurality of field effect transistors with an interconnect structure. Herein, use is made of three photolithographical masks for four layers. Thereto, the transistor is provided in a top-gate structure, and the organic semiconductor layer (307) and the dielectric layer (309) are structure and patterned together. The semiconductor layer (307) and the dielectric layer (309) may be removed from areas not associated with field effect transistors (300) or with crossing conductors of the first and second conductor layer (303, 305, 501).

Abstract: The device of the invention comprises a thin film transistor of an organic semiconductor material. This semiconductor material is patterned by applying first a protective layer and thereafter a photoresist. As a result hereof, the transistor of the invention (A) shows a very low leakage current and a low threshold voltage in comparison with prior art transistors (B,C).

Abstract: The synthesis of a precursor oligocene, particularly pentacene, is a two-step process. In the fist step the Diels-Alder adduct of the a,b-dihydro-a,b-etheno-oligocene with a 1,1-dialkoxy-cyclopentadiene is formed. In the second step this Diels-Alder adduct is converted into the precursor oligocene, in that first the corresponding keto-compound is formed, which may be eliminated thereafter. The resulting precursor oligocene can be converted to the oligocene with a heat treatment, particularly after providing a solution hereof on a substrate. It is suitable for use as semiconductor material in a thin-film transistor. Formula (I).

Abstract: The electronic device of the invention comprises one or more active elements, each comprising a first and a second electrode and an active layer of organic material separating the first and second electrodes. Examples of active elements are thin-film transistors and light-emitting diodes. The active layer comprises a polymeric material having conjugated units A and non-conjugated intermediate units B, which intermediate units B separate the conjugated units A from each other, such that no conjugation extends from a first conjugated unit A1 to a second conjugated unit A2. The polymeric material may be a polymer network, an alternating copolymer or a polymer in which the conjugated units are present in side chains. The polymer can be prepared from monomers having a B1-A1-B2 structure, wherein at least one of B1 and B2 comprises a reactive group enabling polymerization.

Abstract: The electronic device includes a thin-film transistor (10) with an active layer (5) that comprises an organic semiconductor material and a carrier material that is free of charge camera. The carrier material has a conductivity below 10?6 S/cm and is preferably electrically insulating. The thin-film transistor (10) has a mobility that is comparable to that of a transistor with an active layer that consists of an organic semiconductor material. Preferably, the organic semiconductor material is an oligomer. The composition used to apply the active layer may contain a photosensitive component. Using such a composition, the active layer can be relief-structured, thereby preventing any leakage current between neighboring transistors in the electronic device.

Abstract: The electronic device includes a thin-film transistor (10) with an active layer (5) that comprises an organic semiconductor material and a carrier material that is free of charge carriers. The carrier material has a conductivity below 10−6 S/cm and is preferably electrically insulating. The thin-film transistor (10) has a mobility that is comparable to that of a transistor with an active layer that consists of an organic semiconductor material. Preferably, the organic semiconductor material is an oligomer. The composition used to apply the active layer may contain a photosensitive component. Using such a composition, the active layer can be relief-structured, thereby preventing any leakage current between neighboring transistors in the electronic device.

Abstract: A polymer comprising structural units of the formula I is prepared according to a novel method, in which the starting compound R1 ‘S—(CHR’2) —Ar— (CHR2)—SR1 is polymerized with a base, preferably in an aprotic solvent. The polymer comprises 50 to 1000 structural units of the formula I. The solution comprising the polymer thus prepared has a lower viscosity than a solution of a similar polymer with a greater chain length. The solution comprising the polymer thus prepared may be applied as a layer on a substrate. Electronic components with layers prepared with the polymer of the invention show better properties.