Abstract: Example embodiments relate to partially translucent photovoltaic modules and methods for manufacturing partially translucent photovoltaic modules. One embodiment includes a method for electrically interconnecting a plurality of thin-film photovoltaic plates. The method includes positioning a plurality of thin-film photovoltaic plates side by side. The thin-film photovoltaic plates are partially translucent or non-translucent. The method also includes providing at least one connection element on a surface of each of the plurality of thin-film photovoltaic plates. The at least one connection element includes a plurality of electrically conductive wires arranged in a grid structure. Further, the method includes physically separating each connection element into a first connection part that includes a plurality of first electrically interconnected, conductive wires and a second connection part that includes a plurality of second electrically interconnected, conductive wires.

Abstract: Example embodiments relate to partially translucent photovoltaic modules and methods for manufacturing partially translucent photovoltaic modules. One embodiment includes a method for electrically interconnecting a plurality of thin-film photovoltaic plates. The method includes positioning a plurality of thin-film photovoltaic plates side by side. The thin-film photovoltaic plates are partially translucent or non-translucent. The method also includes providing at least one connection element on a surface of each of the plurality of thin-film photovoltaic plates. The at least one connection element includes a plurality of electrically conductive wires arranged in a grid structure. Further, the method includes physically separating each connection element into a first connection part that includes a plurality of first electrically interconnected, conductive wires and a second connection part that includes a plurality of second electrically interconnected, conductive wires.

Abstract: The present disclosure provides a dual workfunction semiconductor device and a method for manufacturing a dual workfunction semiconductor device. The method comprises providing a device on a first region and a device on a second region of a substrate. According to embodiments described herein, the method includes providing a dielectric layer onto the first and second region of the substrate, the dielectric layer on the first region being integrally deposited with the dielectric layer on the second region, and providing a gate electrode on top of the dielectric layer on both the first and second regions, the gate electrode on the first region being integrally deposited with the gate electrode on the second region.

Abstract: This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxides from the surface.

Abstract: This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxides from the surface.