Patents by Inventor Bart Peter Bert Segers

Bart Peter Bert Segers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200249576
    Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
    Type: Application
    Filed: July 11, 2018
    Publication date: August 6, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Patrick WARNAAR, Patricius Aloysius Jacobus TINNEMANS, Grzegorz GRZELA, Everhardus Cornelis MOS, Wim Tjibbo TEL, Marinus JOCHEMSEN, Bart Peter Bert SEGERS, Frank STAALS
  • Publication number: 20200233310
    Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus needs to be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.
    Type: Application
    Filed: April 2, 2020
    Publication date: July 23, 2020
    Applicant: ASML NATHERLANDS B. V.
    Inventors: Léon Maria Albertus VAN DER LOGT, Bart Peter Bert SEGERS, Simon Hendrik Celine VAN GORP, Carlos Cornelis Maria LUIJTEN, Frank STAALS
  • Patent number: 10649342
    Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus should be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, the reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: May 12, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Léon Maria Albertus Van Der Logt, Bart Peter Bert Segers, Simon Hendrik Celine Van Gorp, Carlo Cornelis Maria Luijten, Frank Staals
  • Publication number: 20200117101
    Abstract: A lithographic apparatus prints a focus metrology pattern (T) on a substrate, the printed pattern including at least a first array of features (800). Features at any location within the array define a pattern that repeats at in at least a first direction of periodicity (X), while geometric parameters of the repeating pattern (w1, w3) vary over the array. A focus measurement is derived from measurements of the array at a selected subset of locations (ROI). As a result, the geometric parameters upon which the measurement of focus performance is based can be optimized by selection of locations within the array. The need to optimize geometric parameters of a target design on a reticle (MA) is reduced or eliminated. The measured property may be asymmetry, for example, and/or diffraction efficiency. The measured property for all locations may be captured by dark-field imaging, and a subset of locations selected after capture.
    Type: Application
    Filed: October 11, 2019
    Publication date: April 16, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Miguel GARCIA GRANDA, Elliott Gerard MC NAMARA, Pierre-Yves Jerome Yvan GUITTET, Eric Jos Anton BROUWER, Bart Peter Bert SEGERS
  • Patent number: 10571812
    Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004?) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIGS. 13-15) uses two aberration settings (+AST, ?AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIGS. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: February 25, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Fahong Li, Miguel Garcia Granda, Carlo Cornelis Maria Luijten, Bart Peter Bert Segers, Cornelis Andreas Franciscus Johannes Van Der Poel, Frank Staals, Anton Bernhard Van Oosten, Mohamed Ridane
  • Publication number: 20200026182
    Abstract: Disclosed is a method of determining a characteristic of interest, in particular focus, relating to a structure on a substrate formed by a lithographic process, and an associated patterning device and lithographic system. The method comprises forming a modified substrate feature on the substrate using a corresponding modified reticle feature on a patterning device, the modified substrate feature being formed for a primary function other than metrology, more specifically for providing a support for a vertically integrated structure. The modified reticle feature is such that said modified substrate feature is formed with a geometry dependent on the characteristic of interest during formation. The modified substrate feature can be measured to determine said characteristic of interest.
    Type: Application
    Filed: June 28, 2019
    Publication date: January 23, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Miguel GARCIA GRANDA, Steven Erik STEEN, Eric Jos Anton BROUWER, Bart Peter Bert SEGERS, Pierre-Yves Jerome Yvan GUITTET, Frank STAALS, Paulus Jacobus Maria VAN ADRICHEM
  • Publication number: 20190361358
    Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
    Type: Application
    Filed: February 12, 2018
    Publication date: November 28, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Bart Peter Bert SEGERS, Everhardus Cornelis MOS, Emil Peter SCHMITT-WEAVER, Yichen ZHANG, Petrus Gerardus VAN RHEE, Xing Lan LIU, Maria I KILITZIRAKI, Reiner Maria JUNGBLUT, Hyunwoo YU
  • Publication number: 20190324371
    Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus should be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, the reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.
    Type: Application
    Filed: June 22, 2017
    Publication date: October 24, 2019
    Inventors: Léon Maria Albertus VAN DER LOGT, Bart Peter Bert SEGERS, Simon Hendrik Celine VAN GORP, Carlo Cornelis Maria LUIJTEN, Frank STAALS
  • Publication number: 20190056673
    Abstract: Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004?) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIG. 13-15) uses two aberration settings (+AST, ?AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIG. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.
    Type: Application
    Filed: July 26, 2018
    Publication date: February 21, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Fahong LI, Miguel GARCIA GRANDA, Carlo Cornells Marla LUIJTEN, Bart Peter Bert SEGERS, Cornelis Andreas Franciscus Johannes VAN DER POEL, Frank STAALS, Anton Bernhard VAN OOSTEN, Mohamed RiDANE
  • Patent number: 9519224
    Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero.
    Type: Grant
    Filed: September 21, 2012
    Date of Patent: December 13, 2016
    Assignee: ASML Netherlands B.V.
    Inventors: Arjan Gijsbertsen, Hubertus Antonius Geraets, Bart Peter Bert Segers, Natalia Viktorovna Davydova
  • Publication number: 20140313496
    Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero.
    Type: Application
    Filed: September 21, 2012
    Publication date: October 23, 2014
    Applicant: ASML Netherlands B.V.
    Inventors: Arjan Gijsbertsen, Hubertus Antonius Geraets, Bart Peter Bert Segers, Natalia Victorovna Davydova
  • Patent number: 8446564
    Abstract: A detection method for detecting a property of an extended pattern formed by at least one line generally extending in a first direction. The extended pattern is formed on a substrate or on a substrate table and preferably extends over a length of at least 50× the width of the line. The extended pattern is focus sensitive. The detection method includes moving the substrate table in a first direction and measuring along that first direction a property of the extended pattern. The property can be a result of a physical property of the extended pattern in a second direction perpendicular to the first direction. In a next step a calibration of the substrate table position can be derived from the measured position of the extended pattern.
    Type: Grant
    Filed: June 2, 2009
    Date of Patent: May 21, 2013
    Assignee: ASML Netherlands B.V.
    Inventors: Gerardus Carolus Johannus Hofmans, Bart Peter Bert Segers, Daan Maurtis Slotboom
  • Publication number: 20090305151
    Abstract: A detection method for detecting a property of an extended pattern formed by at least one line generally extending in a first direction. The extended pattern is formed on a substrate or on a substrate table and preferably extends over a length of at least 50× the width of the line. The extended pattern is focus sensitive. The detection method includes moving the substrate table in a first direction and measuring along that first direction a property of the extended pattern. The property can be a result of a physical property of the extended pattern in a second direction perpendicular to the first direction. In a next step a calibration of the substrate table position can be derived from the measured position of the extended pattern.
    Type: Application
    Filed: June 2, 2009
    Publication date: December 10, 2009
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Gerardus Carolus Johannus HOFMANS, Bart Peter Bert Segers, Daan Maurtis Slotboom