Abstract: An electrostatic discharge (ESD) protection device on a semiconductor substrate and a method for making the same. The device has an active region. The active region includes a gate. The active region also includes a source including a silicide portion having a source contact. The active region further includes a drain including a silicide portion having a drain contact. The source and drain each extend away from the gate along a device axis. The drain contact is laterally offset with respect to the source contact along a direction orthogonal to the device axis whereby current flow between the source contact and the drain contact has a lateral component. The device further comprises a non-silicide region located laterally between the drain contact and the source contact.

Abstract: An electrostatic discharge (ESD) protection device on a semiconductor substrate and a method for making the same. The device has an active region. The active region includes a gate. The active region also includes a source including a silicide portion having a source contact. The active region further includes a drain including a silicide portion having a drain contact. The source and drain each extend away from the gate along a device axis. The drain contact is laterally offset with respect to the source contact along a direction orthogonal to the device axis whereby current flow between the source contact and the drain contact has a lateral component. The device further comprises a non-silicide region located laterally between the drain contact and the source contact.

Abstract: A method of manufacturing a MEMS device comprises forming a MEMS device element (12). A sidewall (20) is formed around the MEMS device element, and a sacrificial layer (14) is formed over the device element and within the sidewall. A package cover layer (16) is provided over the sacrificial layer, and the sacrificial layer is removed. This method provides additional sidewalls to the cap provided over the MEMS device. These additional sidewalls can then be deposited by a different process and be formed of a different material to the top part of the package cover layer. The sidewalls can prevent reflow of the sacrificial layer and improve the sealing properties of the sidewalls.

Abstract: A method of manufacturing a MEMS device comprises forming a MEMS device element (12). A sidewall (20) is formed around the MEMS device element, and a sacrificial layer (14) is formed over the device element and within the sidewall. A package cover layer (16) is provided over the sacrificial layer, and the sacrificial layer is removed. This method provides additional sidewalls to the cap provided over the MEMS device. These additional sidewalls can then be deposited by a different process and be formed of a different material to the top part of the package cover layer. The sidewalls can prevent reflow of the sacrificial layer and improve the sealing properties of the sidewalls.

Abstract: The invention relates to a MEMS resonator comprising a first electrode, a movable element (48) comprising a second electrode, the movable element (48) at least being movable towards the first electrode, the first electrode and the movable element (48) being separated by a gap (46, 47) having sidewalls. According to the invention, the MEMS resonator is characterized in that the gap (46, 47) has been provided with a dielectric layer (60) on at least one of the sidewalls.

Abstract: The invention relates to a MEMS resonator comprising a first electrode, a movable element (48) comprising a second electrode, the movable element (48) at least being movable towards the first electrode, the first electrode and the movable element (48) being separated by a gap (46, 47) having sidewalls. According to the invention, the MEMS resonator is characterized in that the gap (46, 47) has been provided with a dielectric layer (60) on at least one of the sidewalls.