Abstract: A method is provided for bonding a first substrate carrying a semiconductor device layer on its front surface to a second substrate. The method comprises producing the semiconductor device layer on the front surface of the first substrate, depositing a first metal bonding layer or a stack of metal layers on the first substrate, on top of the semiconductor device layer, depositing a second metal bonding layer or a stack of metal layers on the front surface of the second substrate, depositing a metal stress-compensation layer on the back side of the second substrate, thereafter establishing a metal bond between the first and second substrate, by bringing the first and second metal bonding layers or stacks of layers into mutual contact under conditions of mechanical pressure and temperature suitable for obtaining the metal bond, and removing the first substrate.

Abstract: A method is provided for bonding a first substrate carrying a semiconductor device layer on its front surface to a second substrate. The method comprises producing the semiconductor device layer on the front surface of the first substrate, depositing a first metal bonding layer or a stack of metal layers on the first substrate, on top of the semiconductor device layer, depositing a second metal bonding layer or a stack of metal layers on the front surface of the second substrate, depositing a metal stress-compensation layer on the back side of the second substrate, thereafter establishing a metal bond between the first and second substrate, by bringing the first and second metal bonding layers or stacks of layers into mutual contact under conditions of mechanical pressure and temperature suitable for obtaining the metal bond, and removing the first substrate.

Abstract: A method is provided for bonding a first substrate carrying a semiconductor device layer on its front surface to a second substrate. The method comprises producing the semiconductor device layer on the front surface of the first substrate, depositing a first metal bonding layer or a stack of metal layers on the first substrate, on top of the semiconductor device layer, depositing a second metal bonding layer or a stack of metal layers on the front surface of the second substrate, depositing a metal stress-compensation layer on the back side of the second substrate, thereafter establishing a metal bond between the first and second substrate, by bringing the first and second metal bonding layers or stacks of layers into mutual contact under conditions of mechanical pressure and temperature suitable for obtaining the metal bond, and removing the first substrate.

Abstract: The present disclosure is related to a device for cooling the surface of a semiconductor device such as an integrated circuit or the like, the cooling device comprising a plurality of channels (3?) which are non-parallel to the surface to be cooled, each channel comprising a plurality of separate electrodes (5) or equivalent conducting areas arranged along the length of each channel, the device further comprising or being connectable to means for applying a voltage to the electrodes or conducting areas in each channel according to a sequence, the sequence being such that a droplet (6) of cooling liquid in a channel may be moved from one electrode to the next, thereby transporting the droplet from the top of the channel to the bottom, from where the droplet impinges on the surface to be cooled.

Abstract: The present disclosure is related to a device for cooling the surface of a semiconductor device such as an integrated circuit or the like, the cooling device comprising a plurality of channels (3?) which are non-parallel to the surface to be cooled, each channel comprising a plurality of separate electrodes (5) or equivalent conducting areas arranged along the length of each channel, the device further comprising or being connectable to means for applying a voltage to the electrodes or conducting areas in each channel according to a sequence, the sequence being such that a droplet (6) of cooling liquid in a channel may be moved from one electrode to the next, thereby transporting the droplet from the top of the channel to the bottom, from where the droplet impinges on the surface to be cooled.