Abstract: A spectral sensor comprises (i) a first type of interference filter comprising reflective multilayers of a first type and an intermediate layer configured to give a constructive interference for a wavelength in a first range, and (ii) a second type of interference filter comprising reflective multilayers of a second type and an intermediate layer configured to give a constructive interference for a wavelength in a second range. The sensor further comprises first and second filter stacks configured to selectively transmit light in the first and second wavelength ranges to first and second photo-sensitive areas, respectively. The first filter stack includes the first type of interference filter and a second type of dielectric mirror that is reflective in the second wavelength range. The second filter stack includes the second type of interference filter and a first type of dielectric mirror that is reflective in the first wavelength range.

Abstract: An imaging sensor comprises: an array of light-detecting elements, wherein each light-detecting element in the array of light-detecting elements is arranged in the imaging sensor so as to detect a respective wavelength interval, wherein the respective wavelength interval differs for different light-detecting elements; a pattern arranged on the array of light-detecting elements, wherein the pattern defines a plurality of transparent areas, each transparent area being associated with a corresponding light-detecting element in the array of light-detecting elements, wherein a size of a transparent area among the plurality of transparent areas is dependent of the corresponding light-detecting element with which the transparent area is associated.

Abstract: A spectral sensor comprises (i) a first type of interference filter comprising reflective multilayers of a first type and an intermediate layer configured to give a constructive interference for a wavelength in a first range, and (ii) a second type of interference filter comprising reflective multilayers of a second type and an intermediate layer configured to give a constructive interference for a wavelength in a second range. The sensor further comprises first and second filter stacks configured to selectively transmit light in the first and second wavelength ranges to first and second photo-sensitive areas, respectively. The first filter stack includes the first type of interference filter and a second type of dielectric mirror that is reflective in the second wavelength range. The second filter stack includes the second type of interference filter and a first type of dielectric mirror that is reflective in the first wavelength range.

Abstract: An imaging sensor comprises: an array of light-detecting elements, wherein each light-detecting element in the array of light-detecting elements is arranged in the imaging sensor so as to detect a respective wavelength interval, wherein the respective wavelength interval differs for different light-detecting elements; a pattern arranged on the array of light-detecting elements, wherein the pattern defines a plurality of transparent areas, each transparent area being associated with a corresponding light-detecting element in the array of light-detecting elements, wherein a size of a transparent area among the plurality of transparent areas is dependent of the corresponding light-detecting element with which the transparent area is associated.

Abstract: An integrated circuit for an imaging device including an array of photo-sensitive areas is disclosed. In one aspect the integrated circuit includes a first multi-layer structure and a second multi-layer structure arranged over a first and a second photo-sensitive area, respectively. The second multi-layer structures each have a bottom and a top reflective structure and a spacer layer arranged therebetween. The spacer layer has a thickness such that the multi-layer structure selectively transmits a narrow range of wavelengths of electro-magnetic radiation. The bottom and top reflective structures include a stack of alternating layers of a first and a second material. Thickness and/or material of the alternating layers of the first multi-layer structure differ from thickness and/or material of the alternating layers of the second multi-layer structure.

Abstract: An integrated circuit for an imaging device including an array of photo-sensitive areas is disclosed. In one aspect the integrated circuit includes a first multi-layer structure and a second multi-layer structure arranged over a first and a second photo-sensitive area, respectively. The second multi-layer structures each have a bottom and a top reflective structure and a spacer layer arranged therebetween. The spacer layer has a thickness such that the multi-layer structure selectively transmits a narrow range of wavelengths of electro-magnetic radiation. The bottom and top reflective structures include a stack of alternating layers of a first and a second material. Thickness and/or material of the alternating layers of the first multi-layer structure differ from thickness and/or material of the alternating layers of the second multi-layer structure.