Patents by Inventor Bart Vermang

Bart Vermang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8557718
    Abstract: A method of forming a surface passivation layer on a surface of a crystalline silicon substrate is disclosed. In one aspect, the method includes depositing an Al2O3 layer on the surface, the Al2O3 layer having a thickness not exceeding about 15 nm; performing an outgassing process at a temperature in the range between about 500° C. and 900° C., after the deposition of the Al2O3 layer on the surface; and after the outgassing process, depositing at least one additional dielectric layer such as a silicon nitride layer and/or a silicon oxide layer on the Al2O3 layer.
    Type: Grant
    Filed: June 5, 2012
    Date of Patent: October 15, 2013
    Assignees: IMEC, Katholieke Universiteit Leuven
    Inventor: Bart Vermang
  • Publication number: 20120306058
    Abstract: A method of forming a surface passivation layer on a surface of a crystalline silicon substrate is disclosed. In one aspect, the method includes depositing an Al2O3 layer on the surface, the Al2O3 layer having a thickness not exceeding about 15 nm; performing an outgassing process at a temperature in the range between about 500° C. and 900° C., after the deposition of the Al2O3 layer on the surface; and after the outgassing process, depositing at least one additional dielectric layer such as a silicon nitride layer and/or a silicon oxide layer on the Al2O3 layer.
    Type: Application
    Filed: June 5, 2012
    Publication date: December 6, 2012
    Applicants: Katholieke Universiteit Leuven, IMEC
    Inventor: Bart Vermang
  • Publication number: 20120192943
    Abstract: A method is disclosed for fabricating a photovoltaic cell comprising local back contacts. In one aspect, the method includes providing a silicon substrate, depositing a surface passivation layer at a rear side of the silicon substrate, forming delaminated regions or bubbles at an interface between the surface passivation layer and the silicon substrate, depositing a metal layer on the surface passivation layer, and performing a metal firing.
    Type: Application
    Filed: January 30, 2012
    Publication date: August 2, 2012
    Applicants: Katholieke Universiteit Leuven, IMEC
    Inventors: Bart Vermang, Hans Goverde
  • Publication number: 20110308603
    Abstract: A method of passivating a silicon surface is disclosed. In one aspect, the method includes cleaning the silicon surface by subjecting the silicon surface to a sequence of steps wherein the final step is a chemical oxidation step resulting in a hydrophilic silicon surface. The method may also include drying the cleaned silicon surface using an advanced drying technique, and/or depositing an oxide layer on the silicon surface.
    Type: Application
    Filed: June 17, 2011
    Publication date: December 22, 2011
    Applicants: Katholieke Universiteit Leuven, IMEC
    Inventors: Bart Vermang, Aude Rothschild, Twan Bearda