Patents by Inventor Bartlomiej KARDASZ

Bartlomiej KARDASZ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of manufacture precessional spin current magnetic tunnel junction devices
    Patent number: 11545620
    Abstract: A Magnetic Tunnel Junction (MTJ) device can include a second Precessional Spin Current (PSC) magnetic layer of Ruthenium (Ru) having a predetermined thickness and a predetermined smoothness. An etching process for smoothing the PSC magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.
    Type: Grant
    Filed: August 18, 2020
    Date of Patent: January 3, 2023
    Assignee: Integrated Silicon Solution, (Cayman) Inc.
    Inventors: Bartlomiej Kardasz, Jorge Vasquez, Mustafa Pinarbasi
  • METHODS OF MANUFACTURE PRECESSIONAL SPIN CURRENT MAGNETIC TUNNEL JUNCTION DEVICES
    Publication number: 20200411752
    Abstract: A Magnetic Tunnel Junction (MTJ) device can include a second Precessional Spin Current (PSC) magnetic layer of Ruthenium (Re) having a predetermined thickness and a predetermined smoothness. An etching process for smoothing the PSC magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.
    Type: Application
    Filed: August 18, 2020
    Publication date: December 31, 2020
    Inventors: Bartlomiej KARDASZ, Jorge VASQUEZ, Mustafa PINARBASI
  • Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture
    Patent number: 10840436
    Abstract: A Magnetic Tunnel Junction (MTJ) device can include a free magnetic layer having a predetermined smoothness. An etching process for smoothing the free magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: November 17, 2020
    Assignee: Spin Memory, Inc.
    Inventors: Bartlomiej Kardasz, Jorge Vasquez, Mustafa Pinarbasi
  • Precessional spin current magnetic tunnel junction devices and methods of manufacture
    Patent number: 10784439
    Abstract: A Magnetic Tunnel Junction (MTJ) device can include a second Precessional Spin Current (PSC) magnetic layer of Ruthenium (Re) having a predetermined thickness and a predetermined smoothness. An etching process for smoothing the PSC magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: September 22, 2020
    Assignee: Spin Memory, Inc.
    Inventors: Bartlomiej Kardasz, Jorge Vasquez, Mustafa Pinarbasi
  • Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
    Patent number: 10580827
    Abstract: A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM bit cell consists of a magnetic tunnel junction stack having a significantly improved performance of the magnetic storage layer. The MRAM device utilizes a polarizer layer with a magnetic vector that can switch between a stabilizing magnetic direction and a programming magnetic direction.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: March 3, 2020
    Assignee: Spin Memory, Inc.
    Inventors: Steven Watts, Georg Martin Wolf, Kadriye Deniz Bozdag, Bartlomiej Kardasz, Mustafa Pinarbasi
  • Magnetic tunnel junction devices including an optimization layer
    Patent number: 10424723
    Abstract: A Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of cell pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the cell pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the cell pillar.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: September 24, 2019
    Assignee: SPIN MEMORY, INC.
    Inventors: Thomas Boone, Pradeep Manandhar, Manfred Schabes, Bartlomiej Kardasz, Mustafa Pinarbasi
  • Perpendicular Magnetic Anisotropy Interface Tunnel Junction Devices
    Publication number: 20190237664
    Abstract: A Magnetic Tunnel Junction (MT) device can include a free magnetic layer having a predetermined smoothness. An etching process for smoothing the free magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.
    Type: Application
    Filed: March 8, 2019
    Publication date: August 1, 2019
    Inventors: Bartlomiej KARDASZ, Jorge VASQUEZ, Mustafa PINARBASI
  • Methods of manufacturing magnetic tunnel junction devices
    Patent number: 10367139
    Abstract: A method of manufacturing a Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of MTJ pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the MTJ pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the MTJ pillar.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: July 30, 2019
    Assignee: Spin Memory, Inc.
    Inventors: Thomas Boone, Pradeep Manandhar, Manfred Schabes, Bartlomiej Kardasz, Mustafa Pinarbasi
  • PRECESSIONAL SPIN CURRENT MAGNETIC TUNNEL JUNCTION DEVICES AND METHODS OF MANUFACTURE
    Publication number: 20190207097
    Abstract: A Magnetic Tunnel Junction (MTJ) device can include a second Precessional Spin Current (PSC) magnetic layer of Ruthenium (Re) having a predetermined thickness and a predetermined smoothness. An etching process for smoothing the PSC magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.
    Type: Application
    Filed: December 29, 2017
    Publication date: July 4, 2019
    Inventors: Bartlomiej KARDASZ, Jorge VASQUEZ, Mustafa PINARBASI
  • METHODS OF MANUFACTURING MAGNETIC TUNNEL JUNCTION DEVICES
    Publication number: 20190207105
    Abstract: A method of manufacturing a Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of MTJ pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the MTJ pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the MTJ pillar.
    Type: Application
    Filed: December 29, 2017
    Publication date: July 4, 2019
    Inventors: Thomas Boone, Pradeep Manandhar, Manfred Schabes, Bartlomiej Kardasz, Mustafa Pinarbasi
  • MAGNETIC TUNNEL JUNCTION DEVICES INCLUDING AN OPTIMIZATION LAYER
    Publication number: 20190207087
    Abstract: A Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of cell pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the cell pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the cell pillar.
    Type: Application
    Filed: December 29, 2017
    Publication date: July 4, 2019
    Inventors: Thomas BOONE, Pradeep MANANDHAR, Manfred SCHABES, Bartlomiej KARDASZ, Mustafa PINARBASI
  • PERPENDICULAR MAGNETIC ANISOTROPY INTERFACE TUNNEL JUNCTION DEVICES AND METHODS OF MANUFACTURE
    Publication number: 20190207095
    Abstract: A Magnetic Tunnel Junction (MTJ) device can include a free magnetic layer having a predetermined smoothness. An etching process for smoothing the free magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.
    Type: Application
    Filed: December 29, 2017
    Publication date: July 4, 2019
    Inventors: Bartlomiej KARDASZ, Jorge VASQUEZ, Mustafa PINARBASI