Patents by Inventor Bartosz Piotr BANACHOWICZ
Bartosz Piotr BANACHOWICZ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11778343Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.Type: GrantFiled: November 30, 2021Date of Patent: October 3, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Dajiang Yang, Sergey Velichko, Bartosz Piotr Banachowicz, Tomas Geurts, Muhammad Maksudur Rahman
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Publication number: 20230282677Abstract: Anti-blooming control in overflow image sensor pixel. At least one example is an image sensor pixel comprising: a photodetector positioned in a semiconductor substrate; a gate oxide layer positioned on the semiconductor substrate; a floating diffusion; a transfer gate positioned on the gate oxide layer; a first anti-blooming implant positioned in the semiconductor substrate, wherein the first anti-blooming implant is coupled to the photodetector and the floating diffusion; and a second anti-blooming implant positioned in the semiconductor substrate, wherein the second anti-blooming implant is coupled to the photodetector and a voltage source contact.Type: ApplicationFiled: December 30, 2022Publication date: September 7, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Daniel TEKLEAB, Bartosz Piotr BANACHOWICZ, Manuel H. INNOCENT
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Publication number: 20220264042Abstract: An image sensor may include an array of image pixels. The array of image pixel may be coupled to row control circuitry and column readout circuitry. An image pixel in the array may include a charge integration portion having a photodiode, a floating diffusion region, and a capacitor coupled to the floating diffusion region and may include a voltage-domain sampling portion having three capacitors. High light and low light image level and reset level signals may be sampled and stored at the voltage-domain sampling portion before being readout to the column readout circuitry during a readout operation. The high light reset level signal may be sampled and stored during the readout operation.Type: ApplicationFiled: February 3, 2022Publication date: August 18, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Manuel H. INNOCENT, Tomas GEURTS, Genis CHAPINAL GOMEZ, Tze Ching FUNG, Bartosz Piotr BANACHOWICZ
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Publication number: 20220086375Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.Type: ApplicationFiled: November 30, 2021Publication date: March 17, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Dajiang YANG, Sergey VELICHKO, Bartosz Piotr BANACHOWICZ, Tomas GEURTS, Muhammad Maksudur RAHMAN
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Patent number: 11218653Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.Type: GrantFiled: October 23, 2019Date of Patent: January 4, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Dajiang Yang, Sergey Velichko, Bartosz Piotr Banachowicz, Tomas Geurts, Muhammad Maksudur Rahman
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Publication number: 20210014438Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.Type: ApplicationFiled: October 23, 2019Publication date: January 14, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Dajiang YANG, Sergey VELICHKO, Bartosz Piotr BANACHOWICZ, Tomas GEURTS, Muhammad Maksudur RAHMAN
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Publication number: 20200052024Abstract: Implementations of image sensors may include a passivation layer coupled over a silicon layer, a color-filter-array coupled over the passivation layer, a lens coupled over the color-filter-array, and at least two optically transmissive charge dissipation layers coupled over the silicon layer.Type: ApplicationFiled: June 27, 2019Publication date: February 13, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Richard MAURITZSON, Bartosz Piotr BANACHOWICZ, Jon DALEY, Brian Anthony VAARTSTRA
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Patent number: 10165211Abstract: An image sensor may include optically black pixels for obtaining dark current measurements. The image sensor may include dummy pixels between the active pixel array and the optically black pixels. Light incident upon the dummy pixels may be redirected to the optically black pixels, causing inaccurate dark current measurements. Light-blocking structures may be provided in the dummy pixels to prevent light from reaching the optically black pixels. A grid of openings may be formed in the active pixel array and the dummy pixel area. The grid may be filled with color filters in the active area and light-blocking elements in the dummy pixel area. The dummy pixel area may include a single opening in the grid in which a single light-blocking element that covers multiple dummy pixel photodiodes is formed. Light-blocking structures in the dummy pixel area may extend over the optically black pixels.Type: GrantFiled: August 22, 2017Date of Patent: December 25, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Swarnal Borthakur, Loriston Ford, Bartosz Piotr Banachowicz
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Patent number: 10070079Abstract: A global shutter image sensor may include an array of image sensor pixels. Each pixel may have a photodiode, a charge storage region, low light level circuitry and high light level circuitry. During high light level conditions, some charge generated by the photodiode may be diverted to the high light level circuitry and the remainder may be transferred to the low light level circuitry. During low light level conditions, all of the generated charge may be transferred to the low light level circuitry. A light shielding structure may be formed over the charge storage region. The circuit components of each pixel may be divided between first and second chips. By forming the components on separate chips and by implementing high light level circuitry, the size of the charge storage region may be reduced while preserving the high dynamic range and low noise of the image sensor during all illumination conditions.Type: GrantFiled: January 30, 2017Date of Patent: September 4, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jaroslav Hynecek, Bartosz Piotr Banachowicz
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Publication number: 20180220086Abstract: A global shutter image sensor may include an array of image sensor pixels. Each pixel may have a photodiode, a charge storage region, low light level circuitry and high light level circuitry. During high light level conditions, some charge generated by the photodiode may be diverted to the high light level circuitry and the remainder may be transferred to the low light level circuitry. During low light level conditions, all of the generated charge may be transferred to the low light level circuitry. A light shielding structure may be formed over the charge storage region. The circuit components of each pixel may be divided between first and second chips. By forming the components on separate chips and by implementing high light level circuitry, the size of the charge storage region may be reduced while preserving the high dynamic range and low noise of the image sensor during all illumination conditions.Type: ApplicationFiled: January 30, 2017Publication date: August 2, 2018Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jaroslav HYNECEK, Bartosz Piotr BANACHOWICZ
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Patent number: 10002895Abstract: An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.Type: GrantFiled: October 14, 2016Date of Patent: June 19, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Daniel Tekleab, Muhammad Maksudur Rahman, Eric Gordon Stevens, Bartosz Piotr Banachowicz, Robert Michael Guidash, Vladimir Korobov
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Patent number: 9883128Abstract: An image sensor may include a pixel array with high dynamic range functionality and phase detection pixels. The phase detection pixels may be arranged in phase detection pixel groups. Each phase detection pixel group may include three adjacent pixels arranged consecutively in a line. A single microlens may cover all three pixels in the phase detection pixel group, or two microlenses may combine to cover the three pixels in the phase detection pixel group. The edge pixels in each phase detection pixel group may have the same integration time and the same color. The middle pixel in each phase detection pixel group may have the same or different color as the edge pixels, and the same or different integration time as the edge pixels. Phase detection pixel groups may also be formed from two pixels that each are 1.5 times the size of neighboring pixels.Type: GrantFiled: May 20, 2016Date of Patent: January 30, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Bartosz Piotr Banachowicz, Swarnal Borthakur, Marko Mlinar, Ulrich Boettiger, Andrew Eugene Perkins
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Publication number: 20170358617Abstract: An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.Type: ApplicationFiled: October 14, 2016Publication date: December 14, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Daniel TEKLEAB, Muhammad Maksudur RAHMAN, Eric Gordon STEVENS, Bartosz Piotr BANACHOWICZ, Robert Michael GUIDASH, Vladimir KOROBOV
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Publication number: 20170339353Abstract: An image sensor may include a pixel array with high dynamic range functionality and phase detection pixels. The phase detection pixels may be arranged in phase detection pixel groups. Each phase detection pixel group may include three adjacent pixels arranged consecutively in a line. A single microlens may cover all three pixels in the phase detection pixel group, or two microlenses may combine to cover the three pixels in the phase detection pixel group. The edge pixels in each phase detection pixel group may have the same integration time and the same color. The middle pixel in each phase detection pixel group may have the same or different color as the edge pixels, and the same or different integration time as the edge pixels. Phase detection pixel groups may also be formed from two pixels that each are 1.5 times the size of neighboring pixels.Type: ApplicationFiled: May 20, 2016Publication date: November 23, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Bartosz Piotr BANACHOWICZ, Swarnal BORTHAKUR, Marko MLINAR, Ulrich BOETTIGER, Andrew Eugene PERKINS