Patents by Inventor Basker Veeraraghavan

Basker Veeraraghavan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of making fins and fin field effect transistors (FinFETs)
    Patent number: 8859389
    Abstract: Methods of making fins and semiconductor structures containing fins are provided. The methods involve forming a multi-layer structure over a semiconductor substrate. The multi-layer structure comprises a first layer over the semiconductor substrate, a second layer over the first layer, and a third layer over the second layer. The method also comprises removing upper portions of the semiconductor substrate and portions of the multi-layer structure to form fins of the semiconductor substrate and portions of the multi-layer structure. Further, the method comprises selectively oxidizing the first layer while oxidization of the second layer and the third layer is less than the oxidization of the first layer. The oxidation can be performed before gap fill recess or after gap fill recess.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: October 14, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hirohisa Kawasaki, Basker Veeraraghavan, Hemant Adhikari, Witold Maszara
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
    Publication number: 20120193751
    Abstract: Methods of making fins and semiconductor structures containing fins are provided. The methods involve forming a multi-layer structure over a semiconductor substrate. The multi-layer structure comprises a first layer over the semiconductor substrate, a second layer over the first layer, and a third layer over the second layer. The method also comprises removing upper portions of the semiconductor substrate and portions of the multi-layer structure to form fins of the semiconductor substrate and portions of the multi-layer structure. Further, the method comprises selectively oxidizing the first layer while oxidization of the second layer and the third layer is less than the oxidization of the first layer. The oxidation can be performed before gap fill recess or after gap fill recess.
    Type: Application
    Filed: January 28, 2011
    Publication date: August 2, 2012
    Applicants: TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC., INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.
    Inventors: Hirohisa Kawasaki, Basker Veeraraghavan, Hemant Adhikari, Witold Maszara