Patents by Inventor Bassem M. Hamieh

Bassem M. Hamieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11192101
    Abstract: A microfluidic chip with high volumetric flow rate is provided that includes at least two vertically stacked microfluidic channel layers, each microfluidic channel layer including an array of spaced apart pillars. Each microfluidic channel layer is interconnected by an inlet/outlet opening that extends through the microfluidic chip. The microfluidic chip is created without wafer to wafer bonding thus circumventing the cost and yield issues associated with microfluidic chips that are created by wafer bonding.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: December 7, 2021
    Assignee: International Business Machines Corporation
    Inventors: Chi-Chun Liu, Yann Mignot, Joshua T. Smith, Bassem M. Hamieh, Nelson Felix, Robert L. Bruce
  • Patent number: 11084032
    Abstract: A microfluidic chip with a high volumetric flow rate is provided that includes at least two vertically stacked microfluidic channel layers, each microfluidic channel layer including an array of spaced apart pillars. Each microfluidic channel layer is interconnected by an inlet/outlet opening that extends through the microfluidic chip. The microfluidic chip is created without wafer to wafer bonding thus circumventing the cost and yield issues associated with microfluidic chips that are created by wafer bonding.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: August 10, 2021
    Assignee: International Business Machines Corporation
    Inventors: Chi-Chun Liu, Yann Mignot, Joshua T. Smith, Bassem M. Hamieh, Nelson Felix, Robert L. Bruce
  • Patent number: 11067895
    Abstract: After printing common features from a primary mask into a photoresist layer located over a substrate, a functional feature which is suitable for changing functionalities or the configurations of the common features according to a chip design is selected from a library of additional functional features in a secondary mask. The selected functional feature from the secondary mask is printed into the photoresist layer to modify the common features that already exist in the photoresist layer. The selection and printing of functional feature processes can be repeated until a final image corresponding to the chip design is obtained in the photoresist layer.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: July 20, 2021
    Assignee: International Business Machines Corporation
    Inventors: John B. Deforge, Bassem M. Hamieh, Terence B. Hook, Theresa A. Newton, Kirk D. Peterson
  • Patent number: 10903184
    Abstract: A thermal interface material and systems and methods for forming a thermal interface material include depositing a layer of a composite material, including at least a first material and a second material, the first material including a carrier fluid and the second material including a filler particle suspended within the first material. A particle manipulator is positioned over the layer of the composite material, the particle manipulator including at least one emitter to apply a particle manipulating field to bias a movement of the filler particles. The second material is redistributed by applying the particle manipulating field to interact with the second material causing the second material to migrate from a surrounding region in the composite material into a high concentration region in the composite material to form a customized thermal interface such that the high concentration region is configured and positioned corresponding to a hotspot.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: January 26, 2021
    Assignee: International Business Machines Corporation
    Inventors: Jonathan Fry, Tuhin Sinha, Michael Rizzolo, Bassem M. Hamieh
  • Publication number: 20200070150
    Abstract: A microfluidic chip with high volumetric flow rate is provided that includes at least two vertically stacked microfluidic channel layers, each microfluidic channel layer including an array of spaced apart pillars. Each microfluidic channel layer is interconnected by an inlet/outlet opening that extends through the microfluidic chip. The microfluidic chip is created without wafer to wafer bonding thus circumventing the cost and yield issues associated with microfluidic chips that are created by wafer bonding.
    Type: Application
    Filed: May 22, 2019
    Publication date: March 5, 2020
    Inventors: Chi-Chun Liu, Yann Mignot, Joshua T. Smith, Bassem M. Hamieh, Nelson Felix, Robert L. Bruce
  • Publication number: 20200070151
    Abstract: A microfluidic chip with a high volumetric flow rate is provided that includes at least two vertically stacked microfluidic channel layers, each microfluidic channel layer including an array of spaced apart pillars. Each microfluidic channel layer is interconnected by an inlet/outlet opening that extends through the microfluidic chip. The microfluidic chip is created without wafer to wafer bonding thus circumventing the cost and yield issues associated with microfluidic chips that are created by wafer bonding.
    Type: Application
    Filed: May 22, 2019
    Publication date: March 5, 2020
    Inventors: Chi-Chun Liu, Yann Mignot, Joshua T. Smith, Bassem M. Hamieh, Nelson Felix, Robert L. Bruce
  • Publication number: 20200066669
    Abstract: A thermal interface material and systems and methods for forming a thermal interface material include depositing a layer of a composite material, including at least a first material and a second material, the first material including a carrier fluid and the second material including a filler particle suspended within the first material. A particle manipulator is positioned over the layer of the composite material, the particle manipulator including at least one emitter to apply a particle manipulating field to bias a movement of the filler particles. The second material is redistributed by applying the particle manipulating field to interact with the second material causing the second material to migrate from a surrounding region in the composite material into a high concentration region in the composite material to form a customized thermal interface such that the high concentration region is configured and positioned corresponding to a hotspot.
    Type: Application
    Filed: August 22, 2018
    Publication date: February 27, 2020
    Inventors: Jonathan Fry, Tuhin Sinha, Michael Rizzolo, Bassem M. Hamieh
  • Patent number: 10312346
    Abstract: A method includes forming a plurality of fins on a substrate. The method further includes forming a plurality of deep trenches in the substrate and interposed between each fin of the plurality of fins. The method further includes forming a doped semiconductor layer having a uniform thickness, wherein the doped semiconductor layer is formed prior to removing any fins of the plurality of fins.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: June 4, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Brent A. Anderson, Bassem M. Hamieh, Stuart A. Sieg, Junli Wang
  • Publication number: 20180203341
    Abstract: After printing common features from a primary mask into a photoresist layer located over a substrate, a functional feature which is suitable for changing functionalities or the configurations of the common features according to a chip design is selected from a library of additional functional features in a secondary mask. The selected functional feature from the secondary mask is printed into the photoresist layer to modify the common features that already exist in the photoresist layer. The selection and printing of functional feature processes can be repeated until a final image corresponding to the chip design is obtained in the photoresist layer.
    Type: Application
    Filed: January 13, 2017
    Publication date: July 19, 2018
    Inventors: John B. Deforge, Bassem M. Hamieh, Terence B. Hook, Theresa A. Newton, Kirk D. Peterson
  • Publication number: 20180108754
    Abstract: A method includes forming a plurality of fins on a substrate. The method further includes forming a plurality of deep trenches in the substrate and interposed between each fin of the plurality of fins. The method further includes forming a doped semiconductor layer having a uniform thickness, wherein the doped semiconductor layer is formed prior to removing any fins of the plurality of fins.
    Type: Application
    Filed: October 19, 2016
    Publication date: April 19, 2018
    Inventors: Brent A. Anderson, Bassem M. Hamieh, Stuart A. Sieg, Junli Wang